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PD-94057D

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level R

DS(on)

IRHQ567110 100K Rads (Si) 0.27Ω

IRHQ563110 300K Rads (Si) 0.29Ω

IRHQ567110 100K Rads (Si)

0.96Ω

IRHQ563110 300K Rads (Si)

0.98Ω

IRHQ567110

100V, Combination 2N-2P-CHANNEL

RAD-Hard HEXFET

™

®

5

TECHNOLOGY

I

D

4.6A

-2.8A

CHANNEL

N

P

LCC-28

International Rectifier’s RAD-Hard

TM

HEXFET

®

MOSFET

Technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite

applications. These devices have been characterized for

both Total Dose and Single Event Effects (SEE). The

combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

n

ESD Rating: Class 1A per MIL-STD-750,

Method 1020

n

Absolute Maximum Ratings (Per Die)

Parameter

ID @ VGS = ±12V, TC = 25°C Continuous Drain Current

ID @ VGS = ±12V, TC = 100°C Continuous Drain Current

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

T STG

Pulsed Drain Current

À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

À

Repetitive Avalanche Energy

À

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

300 (for 5s)

0.89 (Typical)

Pre-Irradiation

N-Channel

4.6

2.9

18.4

12

0.1

±20

47

Á

4.6

1.2

6.1

Â

-55 to 150

°C

g

P-Channel

-2.8

-1.8

-11.2

12

0.1

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

±20

70

²

-2.8

1.2

- 7.1

³

www.irf.com

1

05/01/15

IRHQ567110

Pre-Irradiation

Electrical Characteristics For Each N-Channel Device

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

∆BV

DSS /∆T J Temperature Coefficient of Breakdown

Voltage

RDS(on)

Static Drain-to-Source On-State

Resistance

VGS(th)

Gate Threshold Voltage

g fs

Forward Transconductance

IDSS

Zero Gate Voltage Drain Current

Min

100

—

2.0

3.3

—

Typ Max Units

—

0.13

—

6.1

—

0.31

0.27

4.0

—

10

25

100

-100

13

4.0

3.9

20

24

32

90

—

V

V/°C

Ω

V

S

µA

Test Conditions

VGS = 0V, ID = 1.0mA

Reference to 25°C, ID = 1.0mA

VGS = 12V, ID = 4.6A

Ã

VGS = 12V, ID = 2.9A

VDS = VGS, ID = 1.0mA

VDS = 15V, IDS = 2.9A

Ã

VDS = 80V, VGS = 0V

VDS = 80V,

VGS = 0V, TJ = 125°C

VGS = 20V

VGS = -20V

VGS = 12V, ID = 4.6A

VDS = 50V

VDD = 50V, ID = 4.6A,

VGS = 12V, RG =

7.5Ω

IGSS

Qg

Q gs

Q gd

td

(on)

tr

td

(off)

tf

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

nA

nC

ns

nH

Measured from the center of

drain pad to center of source pad

VGS = 0V, VDS = 25V

f = 1.0MHz

Ciss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

371

108

3.0

—

pF

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

IS

ISM

VSD

trr

Q RR

ton

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min Typ Max Units

—

4.6

18.4

1.2

173

863

Test Conditions

A

V

ns

nC

T

j

= 25°C, IS = 4.6A, VGS = 0V

Ã

Tj = 25°C, IF = 4.6A, di/dt

≤

100A/µs

VDD

≤

50V

Ã

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance (Per Die)

Parameter

RthJC

RthJA

Junction-to-Case

Junction-to-Ambient

Min Typ Max Units

—

11.8

60

°C/W

Test Conditions

Typical socket mount

Note: Corresponding Spice and Saber models are available on International Rectifier Website.

For footnotes refer to the last page

2

www.irf.com

Pre-Irradiation

IRHQ567110

Electrical Characteristics For Each P-Channel Device

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

BVDSS

Drain-to-Source Breakdown Voltage

∆BV

DSS /∆T J Temperature Coefficient of Breakdown

Voltage

RDS(on)

Static Drain-to-Source On-State

Resistance

VGS(th)

Gate Threshold Voltage

g fs

Forward Transconductance

IDSS

Zero Gate Voltage Drain Current

Min

-100

—

-2.0

1.6

—

Typ Max Units

—

-0.13

—

6.1

—

1.2

0.96

-4.0

—

-10

-25

-100

100

11

3.0

4.2

20

24

32

90

—

V

V/°C

Ω

V

S

µA

Test Conditions

VGS = 0V, ID = -1.0mA

Reference to 25°C, ID = -1.0mA

VGS = -12V, ID = -2.8A

Ã

VGS = -12V, ID = -1.8A

VDS = VGS, ID = -1.0mA

VDS = -15V, IDS = -1.8A

Ã

VDS= -80V, VGS=0V

VDS = -80V,

VGS = 0V, TJ = 125°C

VGS = -20V

VGS = 20V

VGS = -12V, ID = -2.8A

VDS = -50V

VDD = -50V, ID = -2.8A,

VGS = -12V, RG =

7.5Ω

IGSS

Qg

Q gs

Q gd

td

(on)

tr

td

(off)

tf

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

nA

nC

ns

nH

Measured from the center of

drain pad to center of source pad

VGS = 0V, VDS = -25V

f = 1.0MHz

Ciss

C oss

C rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

377

102

7.0

—

pF

Source-Drain Diode Ratings and Characteristics (Per Die)

Parameter

IS

ISM

VSD

t rr

Q RR

ton

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

À

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min Typ Max Units

—

-2.8

-11.2

-5.0

138

555

Test Conditions

A

V

ns

nC

T

j

= 25°C, IS = -2.8A, VGS = 0V

Ã

Tj = 25°C, IF = -2.8A, di/dt

≤

-100A/µs

VDD

≤

-50V

Ã

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance (Per Die)

Parameter

RthJC

RthJA

Junction-to-Case

Junction-to-Ambient

Min Typ Max Units

—

11.8

60

°C/W

Test Conditions

Typical socket mount

For footnotes refer to the last page

www.irf.com

3

IRHQ567110

Pre-Irradiation

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation

ÄÅ

Parameter

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

Ã

On-State Resistance (TO-39)

Static Drain-to-Source

Ã

On-State Resistance (LCC-28)

Diode Forward Voltage

Ã

100K Rads(Si)

1

Min Max

100

2.0

—

4.0

100

-100

10

0.226

0.27

1.2

300K Rads (Si)

2

Units

Min

Max

100

2.0

—

4.0

100

-100

10

0.246

0.29

1.2

V

nA

µA

Ω

V

Test Conditions

V

GS

= 0V, I

D

= 1.0mA

V

GS

= V

DS

, I

D

= 1.0mA

V

GS

= 20V

V

GS

= -20 V

V

DS

= 80V, V

GS

=0V

V

GS

= 12V, I

D

= 2.9A

V

GS

= 12V, I

D

= 2.9A

V

GS

= 0V, IS = 4.6A

1. Part number IRHQ567110

2. Part number IRHQ563110

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area (Per Die)

LET

(MeV/(mg/cm ))

38 ± 5%

61 ± 5%

84 ± 5%

2

Energy

(MeV)

300 ± 7.5%

330 ± 7.5%

350 ± 10%

Range

(µm)

38 ± 7.5%

31 ± 10%

28 ± 7.5%

@VGS =

VDS (V)

@VGS =

0V

100

-5V

100

-10V

100

80

-15V

100

35

25

-20V

100

25

-

120

100

80

60

40

20

0

-5

-10

Bias VGS (V)

-15

-20

Bias VDS (V)

LET=38 ± 5%

LET=61 ± 5%

LET=84 ± 5%

Fig a.

Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

4

www.irf.com

Pre-Irradiation

IRHQ567110

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation

Parameter

100K Rads(Si)

1

300K Rads (Si)

2

Units

Test Conditions

Min

Max

Min

Max

BV

DSS

V

GS(th)

I

GSS

I

GSS

I

DSS

R

DS(on)

R

DS(on)

V

SD

Drain-to-Source Breakdown Voltage

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero Gate Voltage Drain Current

Static Drain-to-Source

Ã

On-State Resistance (TO-39)

Static Drain-to-Source

Ã

On-State Resistance (LCC-28)

Diode Forward Voltage

Ã

-100

- 2.0

—

-4.0

-100

100

-10

0.916

0.96

-5.0

-100

- 2.0

—

-4.0

-100

100

-10

0.936

0.98

-5.0

V

nA

µA

Ω

V

GS

= 0V, I

D

= -1.0mA

V

GS

= V

DS

, I

D

= -1.0mA

V

GS

= -20V

V

GS

= 20 V

V

DS

= -80V, V

GS

=0V

V

GS

= -12V, I

D

= -1.8A

V

GS

= -12V, I

D

= -1.8A

V

GS

= 0V, IS = -2.8A

1. Part number IRHQ567110

2. Part number IRHQ563110

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Typical Single Event Effect Safe Operating Area (Per Die)

LET

(MeV/(mg/cm ))

38 ± 5%

61 ± 5%

84 ± 5%

2

Energy

(MeV)

270 ± 7.5%

330 ± 7.5%

350 ± 7.5%

Range

(µm)

35 ± 7.5%

30 ± 7.5%

28 ± 7.5%

@VGS =

VDS (V)

@VGS =

0V

-100

5V

-100

10V

-100

15V

-100

-30

20V

-100

-25

-

-120

-100

-80

-60

-40

-20

0

5

10

Bias VGS (V)

15

20

Bias VDS (V)

LET=38 ± 5%

LET=61 ± 5%

LET=84 ± 5%

Fig a.

Typical Single Event Effect, Safe Operating Area

For footnotes refer to the last page

www.irf.com

5

IRHQ567110_15

IRHQ567110_15概述

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