PD-97821
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ9230
100K Rads (Si)
IRHNJ93230
300K Rads (Si)
R
DS(on)
0.8Ω
0.8Ω
I
D
-6.5A
-6.5A
IRHNJ9230
200V, P-CHANNEL
RAD Hard HEXFET
TECHNOLOGY
™
®
SMD-0.5
International Rectifier’s RADHard HEXFET
®
technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V,
ID @ VGS = -12V,
TC = 25°C Continuous Drain Current
TC = 100°C Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Package Mounting Surface Temp.
Weight
For footnotes, refer to the last page
-6.5
-4.1
-26
75
0.6
± 20
165
-6.5
7.5
-27
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
1.0 (Typical)
g
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
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08/01/14
IRHNJ9230
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
-0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.8
-4.0
—
-25
-250
-100
100
45
10
25
30
50
75
65
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -4.1A
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -4.1A
VDS = -160V,VGS = 0V
VDS = -160V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -6.5A
VDS = -100V
VDD = - 100V, ID = - 6.5A,
VGS = -12V, RG =
7.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source
—
On-State Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
2.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = - 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1360
190
40
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -6.5A, VGS = 0V
Ã
Tj = 25°C, IF = -6.5A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max Units
—
—
—
12
1.67
—
°C/W
Test Conditions
Soldered to 1” Sq. Copper clad Board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes, refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ9230
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-200
- 2.0
—
—
—
—
—
—
—
-4.0
-100
100
-25
0.804
0.8
-5.0
300K Rads (Si)
2
Units
Min
Max
-200
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-25
0.804
0.8
-5.0
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -160V, V
GS
= 0V
V
GS
= -12V, I
D
= -4.1A
V
GS
= -12V, I
D
= -4.1A
V
GS
= 0V, IS = -6.5A
1. Part number IRHNJ9230
2. Part number IRHNJ93230
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2.
Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V
43.0
-200
-200
-200
39.0
-200
-200
-125
@V
GS
=15V
-200
-75
@V
GS
=20V
—
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes, refer to the last page
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IRHNJ9230
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
-5.0V
-5.0V
1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -6.5A
-I
D
, Drain-to-Source Current (A)
2.0
10
T
J
= 150
°
C
1.5
1.0
0.5
1
5.0
V DS = -50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNJ9230
2500
-V
GS
, Gate-to-Source Voltage (V)
2000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -6.5A
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
16
C, Capacitance (pF)
1500
Ciss
12
1000
8
500
Coss
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
10
100us
T
J
= 150
°
C
T
J
= 25
°
C
1
1ms
1
10ms
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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