PD-91396F
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHNA7160
IRHNA3160
IRHNA4160
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
R
DS(on)
0.04Ω
0.04Ω
0.04Ω
0.04Ω
I
D
51A
51A
51A
51A
IRHNA7160
JANSR2N7432U
100V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard HEXFET
TECHNOLOGY
™
®
QPL Part Number
JANSR2N7432U
JANSF2N7432U
JANSG2N7432U
JANSH2N7432U
IRHNA8160 1000K Rads (Si)
SMD - 2
International Rectifier’s RAD-Hard
TM
HEXFET
®
technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
ESD Class:
3B
per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
3.3 (Typical)
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
03/26/14
IRHNA7160, JANSR2N7432U
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
—
2.0
16
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.040
0.045
4.0
—
25
250
100
-100
310
53
110
35
150
150
130
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 32.5A
VGS = 12V, ID = 51A
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 32.5A
VDS = 80V,VGS = 0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 51A
VDS = 50V
VDD = 50V, ID = 51A,
VGS = 12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from center of drain
pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1600
350
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
51
204
1.8
520
6.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 51A, VGS = 0V
Ã
Tj = 25°C, IF = 51A, di/dt
≥
100A/µs
VDD
≤
50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJPCB
Junction-to-Case
Junction-to-PC Board
Min Typ Max
—
—
—
1.6
0.42
—
Units
°C/W
Test Conditions
Solder to a 1” sq. copper clad PC Board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA7160, JANSR2N7432U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Diode Forward Voltage
Ã
100K Rads(Si)
1
300K-1000KRads(Si)
2
Units
V
nA
µA
Ω
V
Min
100
2.0
—
—
—
—
—
Max
—
4.0
100
-100
25
0.045
1.8
Min
100
1.25
—
—
—
—
—
Max
—
4.5
100
-100
50
0.062
1.8
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D
= 32.5A
V
GS
= 0V, IS = 51A
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28
36.8
Energy
(MeV)
285
305
Range
V
DS(V)
(µm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
43
100
100
100
80
60
39
100
90
70
50
—
120
100
80
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
VDS
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNA7160, JANSR2N7432U
Pre-Irradiation
1000
100
10
5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
5.0V
10
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 51A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25
°
C
100
T
J
= 150
°
C
2.0
1.5
10
1.0
0.5
1
V DS = 50V
20µs PULSE WIDTH
5
6
7
8
9
10
11
12
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA7160, JANSR2N7432U
10000
8000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 51A
16
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
240
280
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID, Drain-to-Source Current (A)
100
100µs
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
DC
100
T
J
= 150
°
C
10
10
T
J
= 25
°
C
V
GS
= 0 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
0.0
0.1
V
SD
,Source-to-Drain Voltage (V)
1000
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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