PD-94168C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA597260
IRHNA593260
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
0.102Ω
0.102Ω
I
D
-33.5A
-33.5A
IRHNA597260
200V, P-CHANNEL
5
TECHNOLOGY
SMD-2
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
3.3 (Typical)
-33.5
-21
-134
250
2.0
±20
303
-33.5
25
10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
01/16/08
IRHNA597260
Pre-Irradiation
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
LS + LD
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitanc
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-200
—
—
V
V
GS
= 0V, I
D
= -1.0mA
—
0.25 —
V/°C
Reference to 25°C, I
D
= -1.0mA
—
— 0.102
Ω
V
GS
= -12V, I
D
= -21A
-2.0
— -4.0
V
V
DS
= V
GS
, I
D
= -1.0mA
23
—
—
S
V
DS
> -15V, I
D
= -21A
—
—
-10
V
DS
= -160V, V
GS
= 0V
µA
—
—
-25
V
DS
= -160V, V
GS
= 0V, T
J
= 125°C
—
— -100
V
GS
= -20V
nA
—
—
100
V
GS
= 20V
—
—
180
V
GS
= -12V, I
D
= -33.5A
—
—
75
nC
V
DS
= -100V
—
—
50
—
—
50
V
DD
= -100V, I
D
= -33.5A
—
—
100
V
GS
= -12V, R
G
= 2.35
Ω
ns
—
—
190
—
—
175
—
4.0
—
nH Measured from center of drain
pad to center of source pad
—
—
—
7170
920
86
—
—
—
pF
V
GS
= 0V, V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-33.5
-134
-5.0
450
5.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -33.5A, VGS = 0V
Tj = 25°C, IF = -33.5A, di/dt
≤
-100A/µs
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.5
—
Units
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNA597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Diode Forward Voltage
100K Rads(Si)
1
Min
Max
-200
—
-2.0
-4.0
—
-100
—
100
—
-10
— 0.103
—
-5.0
300KRads(Si)
2
Min
Max
-200
-2.0
—
—
—
—
—
—
-5.0
-100
100
-10
0.103
-5.0
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -160V, V
GS
= 0V
V
GS
= -12V, I
D
= -21A
V
GS
= 0V, IS = -33.5A
1. Part number IRHNA597260
2. Part number IRHNA593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.3
59.9
82.3
Energy
(MeV)
285
345
357
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
36.8
- 200
- 200
- 200
- 200
-75
32.7
- 200
- 200
- 200
- 50
—
28.5
- 200
- 200
- 200
- 35
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNA597260
Pre-Irradiation
1000
-I
D
, Drain-to-Source Current (A)
100
-5.0V
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
1000
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
-5.0V
10
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-35.5A
I
D
=
-33.5A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 150
°
C
1.5
100
1.0
0.5
10
5.0
V DS =
15
-50V
20µs PULSE WIDTH
5.5
6.0
6.5
7.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA597260
10000
8000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
=
-33.5A
-35.5A
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
16
C, Capacitance (pF)
Ciss
6000
12
4000
8
2000
Coss
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
50
100
150
200
250
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
-ID, Drain-to-Source Current (A)
T
J
= 25
°
C
1
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1ms
0.1
0.0
V
GS
= 0 V
1.5
3.0
4.5
6.0
10ms
1000
1
-V
SD
,Source-to-Drain Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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