PD-94493C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
Radiation Level R
ds(on)
IRHNA597160 100K Rads (Si) 0.049Ω
IRHNA593160 300K Rads (Si) 0.049Ω
IRHNA597160
JANSR2N7550U2
100V, P-CHANNEL
REF: MIL-PRF-19500/713
5
TECHNOLOGY
I
D
QPL Part Number
-47A JANSR2N7550U2
-47A JANSF2N7550U2
SMD-2
International Rectifier’s R5
TM
technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm
2
)). The combination of low R
DS(on)
and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC =100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
3.3 (Typical)
-47
-30
-188
250
2.0
±20
400
-47
25
-10
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
12/13/07
IRHNA597160, JANSR2N7550U2
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
-100
Typ Max Units
—
-0.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.049
-4.0
—
-10
-25
-100
100
170
65
30
30
100
100
100
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -30A
Ã
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -30A
Ã
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -47A
VDS = -50V
VDD = -50V, ID = -47A,
VGS =-12V, RG = 2.35Ω,
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
24
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
6240
1570
115
—
—
—
pF
Measured from the center of
drain pad to the center of
source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-47
-188
-5.0
230
1.6
A
V
ns
µC
Test Conditions
T
j
= 25°C, IS = -47A, VGS = 0V
Ã
Tj = 25°C, IF = -47A, di/dt
≤
-100A/µs
VDD
≤
-50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
1.6
0.50
—
Units
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHNA597160, JANSR2N7550U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-100
-2.0
—
—
—
—
—
—
-4.0
-100
100
-10
0.05
-5.0
300KRads(Si)
2
Min
Max
-100
-2.0
—
—
—
—
—
—
-5.0
-100
100
-10
0.05
-5.0
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
= -80V, V
GS
=0V
V
GS
= -12V, I
D
=-30A
V
GS
= 0V, IS = -47A
1. Part number IRHNA597160 (JANSR2N7550U2)
2. Part number IRHNA593160 (JANSF2N7550U2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.9
59.7
82.3
Energy
(MeV)
252.6
314
350
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V @V
GS
=15V @V
GS
=17.5V @V
GS
=20V
33.1
-100
-100
-100
-100
-100
-100
30.5
-100
-100
-100
-100
-75
-25
28.4
-100
-100
-100
-30
—
—
-120
-100
-80
-60
-40
-20
0
0
5
10
VGS
15
20
Br
I
Au
For footnotes refer to the last page
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VDS
Fig a.
Single Event Effect, Safe Operating Area
3
IRHNA597160, JANSR2N7550U2
Pre-Irradiation
1000
VGS
TOP
-15V
-12V
-10V
-6.0V
-5.5V
-5.0V
-4.5V
BOTTOM -4.0V
1000
VGS
-15V
-12V
-10V
-6.0V
-5.5V
-5.0V
-4.5V
BOTTOM -4.0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
100
-4.0V
10
-4.0V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
-52A
I
D
=
-47A
-I
D
, Drain-to-Source Current (A)
2.0
T
J
= 25
°
C
T
J
= 150
°
C
1.5
100
1.0
0.5
10
4.0
V DS
15
= -25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNA597160, JANSR2N7550U2
10000
8000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
=
-47A
-52A
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
16
C, Capacitance (pF)
6000
Ciss
12
4000
Coss
8
2000
4
Crss
0
1
10
100
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 25
°
C
100µs
1ms
10ms
1
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
0.1
0.0
V
GS
= 0 V
1.5
3.0
4.5
6.0
-V
SD
,Source-to-Drain Voltage (V)
1
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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