PD-90885G
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
™
IRHN9150
JANSR2N7422U
100V, P-CHANNEL
REF: MIL-PRF-19500/662
RAD Hard HEXFET TECHNOLOGY
®
Product Summary
Part Number Radiation Level
IRHN9150
100K Rads (Si)
IRHN93150 300K Rads (Si)
R
DS(on)
0.080Ω
0.080Ω
I
D
-22A
-22A
QPL Part Number
JANSR2N7422U
JANSF2N7422U
SMD-1
International Rectifier ’s RADHard HEXFET
TM
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the
well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ V GS = -12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
À
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
For footnotes refer to the last page
-22
-14
-88
150
1.2
±20
500
-22
15
-23
-55 to 150
300 (for 5s)
2.6 (typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
05/13/14
IRHN9150, JANSR2N7422U
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
-100
Typ Max Units
—
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -14A
Ã
VGS = -12V, ID = -22A
Ã
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -14A
Ã
VDS = -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -22A
VDS = -50V
VDD = -50V, ID = -22A,
VGS =-12V, RG = 2.35Ω
∆BV
DSS /∆T J Temperature Coefficient of Breakdown — -0.093 —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
— 0.080
Resistance
—
— 0.085
VGS(th)
Gate Threshold Voltage
-2.0
—
-4.0
g fs
Forward Transconductance
11
—
—
IDSS
Zero Gate Voltage Drain Current
—
—
-25
—
—
-250
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
200
35
48
40
170
190
190
—
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1100
310
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-22
-88
-3.0
300
1.5
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -22A, VGS = 0V
Ã
Tj = 25°C, IF = -22A, di/dt
≤
-100A/µs
VDD
≤
-50V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.6
0.83
—
Units
°C/W
Test Conditions
soldered to a 1”sq. copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHN9150, JANSR2N7422U
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (SMD-1)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min
Max
-100
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-25
0.081
0.080
-3.0
300K Rads (Si)
2
Units
Min
Max
-100
-2.0
—
—
—
—
—
—
—
-5.0
-100
100
-25
0.081
0.080
- 3.0
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
=-80V, V
GS
=0V
V
GS
= -12V, I
D
=-14A
V
GS
= -12V, I
D
=-14A
V
GS
= 0V, IS = -22A
1. Part number IRHN9150 (JANSR2N7422U)
2. Part number IRHN93150 (JANSF2N7422U)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
I
LE T
Me V/(mg/cm²))
28
36.8
59.9
Ene rgy
(Me V)
285
305
345
Range
(µm)
43
39
32.8
VD S(V)
@VGS=0V
-100
-100
-60
@VGS=5V
-100
-100
@VGS=10V
-100
-70
@VGS=15V
-70
-50
@VGS=20V
-60
-40
-120
-100
-80
VDS
-60
-40
-20
0
0
5
10
VGS
15
20
Cu
Br
I
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHN9150, JANSR2N7422U
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
-5.0V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
-I
D
, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
-5.0V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
10
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -22A
Drain-to-Source Current (A)
2.5
T
J
= 25
°
C
2.0
T
J
= 150
°
C
1.5
1.0
-
I
D
,
0.5
10
V DS = -50V
20µs PULSE WIDTH
5
-
V
GS
, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
6
7
8
9
10
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHN9150, JANSR2N7422U
7000
6000
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -22A
V
DS
=-80V
V
DS
=-50V
V
DS
=-20V
16
C, Capacitance (pF)
5000
4000
3000
2000
1000
0
Ciss
12
8
Coss
4
Crss
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
200
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
-I D, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
10ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
DC
1000
T
J
= 150
°
C
10
T
J
= 25
°
C
1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
0.1
-V
SD
,Source-to-Drain Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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