PD-94236C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number Radiation Level
IRHN57250SE 100K Rads (Si)
R
DS(on)
0.06Ω
I
D
31A
IRHN57250SE
200V, N-CHANNEL
5
TECHNOLOGY
SMD-1
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 (for 5s)
2.6 (Typical)
31
19
124
150
1.2
±20
300
31
15
7.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
www.irf.com
1
12/21/11
IRHN57250SE
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
2.5
18
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
—
—
0.06
4.5
—
10
25
100
-100
132
45
60
35
125
80
80
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 19A
Ã
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 19A
Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 31A
VDS = 100V
VDD = 100V, ID = 31A,
VGS =12V, RG = 2.35
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
3860
628
31
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
31
124
1.2
450
6.0
Test Conditions
A
V
nS
µC
T
j
= 25°C, IS = 31A, VGS = 0V
Ã
Tj = 25°C, IF = 31A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.6
0.83
—
Units
°C/W
Test Conditions
soldered to a 2 square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHN57250SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-1)
Diode Forward Voltage
Min
200
2.0
—
—
—
—
—
—
100K Rads (Si)
Max
—
4.5
100
-100
10
0.06
0.06
1.2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=160V, V
GS
=0V
V
GS
= 12V, I
D
= 19A
V
GS
= 12V, I
D
= 19A
V
GS
= 0V, I
D
= 31A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
61 ± 5%
84 ± 5%
2
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
0V
200
200
200
-5V
200
200
200
-10V
200
200
150
-15V
200
185
50
-20V
200
120
25
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
Bias VGS (V)
-15
-20
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHN57250SE
Pre-Irradiation
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
1000
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
10
5.0V
5.0V
1
1
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 31A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 150
°
C
1.5
T
J
= 25
°
C
10
1.0
0.5
1
5.0
V DS =
15
50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHN57250SE
7000
6000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 31A
C, Capacitance (pF)
5000
4000
3000
2000
1000
0
Ciss
Coss
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
12
8
Crss
4
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
80
120
160
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100µs
10
I
SD
, Reverse Drain Current (A)
100
T
J
= 150
°
C
10
T
J
= 25
°
C
1
ID, Drain-to-Source Current (A)
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1ms
10ms
DC
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
0.1
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
