UNISONIC TECHNOLOGIES CO., LTD
6N60Z
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
6N60Z
is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* R
DS(ON)
< 1.75Ω @ V
GS
= 10V, I
D
= 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
6N60ZL-TF3-T
6N60ZG-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
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Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-741.C
6N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
252
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
P
D
40
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
3.2
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
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2 of 6
QW-R502-741.C
6N60Z
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
600
V
10
μA
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, V
GS
= 0V,
100
μA
T
J
=125°C
Forward
V
GS
= 20V, V
DS
= 0V
10
μA
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
-10
μA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.1A
1.4 1.75
Ω
DYNAMIC CHARACTERISTICS
770 1000 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
95 120 pF
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
10
13
pF
SWITCHING CHARACTERISTICS
45
60
ns
Turn-On Delay Time
t
D(ON)
V
GS
=0~10V, V
DD
=30V,
Turn-On Rise Time
t
R
95 110 ns
I
D
=0.5A, R
G
=25Ω
Turn-Off Delay Time
t
D(OFF)
185 200 ns
(Note 1, 2)
Turn-Off Fall Time
t
F
110 125 ns
32.8
nC
Total Gate Charge
Q
G
V
GS
=10V, V
DD
=50V, I
D
=1.3A
Gate-Source Charge
Q
GS
7.0
nC
I
G
=100μA (Note 1, 2)
Gate-Drain Charge
Q
GD
9.8
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8 A
Forward Current
Reverse Recovery Time
t
rr
290
ns
V
GS
= 0 V, I
S
= 6.2 A,
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
2.35
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-741.C
6N60Z
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
4 of 6
QW-R502-741.C
6N60Z
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
V
DS
90%
V
GS
10%
t
D(ON)
t
R
t
D(OFF)
t
F
Switching Test Circuit
Switching Waveforms
V
GS
Q
G
10V
Q
GS
Q
GD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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5 of 6
QW-R502-741.C
模拟电子
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