UNISONIC TECHNOLOGIES CO., LTD
10N30
Preliminary
Power MOSFET
10A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
10N30
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
10N30
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* R
DS(ON)
=0.65Ω @ V
GS
=10V
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N30L-TA3-T
10N30G-TA3-T
10N30L-TM3-T
10N30G-TM3-T
10N30L-TN3-T
10N30G-TN3-T
10N30L-TN3-R
10N30G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R502-738-b
10N30
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
300
V
Gate-Source Voltage
V
GSS
±30
V
I
D
10
A
Continuous (T
C
=25°C)
Drain Current
Pulsed (Note 2)
I
DM
40
A
Avalanche Current (Note 2)
I
AR
11
A
360
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 4)
E
AR
13.5
mJ
135
TO-220
W
Power Dissipation
TO-251/TO-252
83
P
D
TO-220
1.07
Derate above 25°C
W/°C
TO-251/TO-252
0.66
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 5.7mH, I
AS
= 10.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
10.5A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
Junction to Case
TO-251/TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.93
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=300V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=10A
MIN TYP MAX UNIT
300
V
1
µA
+100 nA
-100 nA
4.0
0.65
V
Ω
2.0
0.5
V
GS
=0V, V
DS
=25V, f=1.0MHz
840 1090 pF
250 325 pF
80 110 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-738.b
10N30
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=120V, I
D
=10A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, V
GS
=10V, I
D
=1A,
R
G
=25Ω (Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=10A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
28
4
15
14
89
81
81
35
nC
nC
nC
ns
ns
ns
ns
A
A
V
40
190
170
170
10
40
1.4
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-738.b
10N30
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-738.b
Microchip MCU
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