PD-96911A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHNJ597034CM
IRHNJ593034CM
Radiation Level R
DS(on)
100K Rads (Si)
0.08Ω
300K Rads (Si) 0.08Ω
I
D
-20A
-20A
IRHYS597034CM
JANSR2N7520T3
60V, P-CHANNEL
REF: MIL-PRF-19500/732
5
TECHNOLOGY
QPL Part Number
JANSR2N7520T3
JANSF2N7520T3
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low-Ohmic
TO-257AA
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
n
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-20
-13
-80
75
0.6
±20
134
-20
7.5
-4.9
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
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1
02/11/15
IRHYS597034CM, JANSR2N7520T3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Min
-60
Typ Max Units
—
-0.066
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.087
-4.0
—
-10
-25
-100
100
45
18
13
25
65
75
50
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -13A
Ã
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -13A
Ã
VDS= -48V ,VGS = 0V
VDS = -48V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = -20A
VDS = -30V
VDD = -30V, ID = -20A
VGS = -12V, RG = 7.5Ω
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
g fs
Forward Transconductance
10
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
—
—
—
—
1560
565
62
6.5
—
—
—
—
pF
Ω
Measured from Drain lead (6mm /
0.25in
.
from package) to Source lead
(
6mm /0.25in. from package)
VGS = 0V, VDS = - 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-20
-80
-5.0
100
200
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = -20A, VGS = 0V
Ã
Tj = 25°C, IF =-20A, di/dt
≤
-100A/µs
VDD
≤
-25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYS597034CM, JANSR2N7520T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Ã
Resistance(Low-OhmicTO-257AA)
Diode Forward Voltage
Ã
100K Rads(Si)
1
Min Max
-60
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.087
0.087
-5.0
300KRads(Si)
2
Min
Max
-60
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
-10
0.087
0.087
-5.0
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
=-20V
V
GS
= 20 V
V
DS
= -48V, V
GS
= 0V
V
GS
= -12V, I
D
= -13A
V
GS
= -12V, I
D
= -13A
V
GS
= 0V, IS = -20A
1. Part number IRHYS597034CM, JANSR2N7520T3
2. Part number IRHYS593034CM, JANSF2N7520T3
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm
2
))
37.9
59.7
82.3
Energy
(MeV)
252.6
314
350
VDS (V)
Range
(µm)
@VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
33.1
- 60
- 60
- 60
- 60
- 60
30.5
- 60
- 60
- 60
- 45
- 25
28.4
- 60
- 60
- 60
—
—
-70
-60
-50
-40
-30
-20
-10
0
0
5
10
VGS
15
20
Br
I
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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VDS
3
IRHYS597034CM, JANSR2N7520T3
Pre-Irradiation
100
100
-I D, Drain-to-Source Current (A)
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
-5.0V
10
-5.0V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = -20A
1.5
-I D, Drain-to-Source Current (A)
TJ = 150°C
1.0
T J = 25°C
0.5
VDS = -25V
15
60µs PULSE WIDTH
10
5
5.5
6
6.5
7
7.5
8
8.5
9
-VGS, Gate-to-Source Voltage (V)
VGS = -12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHYS597034CM, JANSR2N7520T3
2500
-VGS, Gate-to-Source Voltage (V)
2000
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID = -20A
16
VDS= -48V
VDS= -30V
VDS= -12V
C, Capacitance (pF)
1500
Ciss
12
1000
Coss
8
500
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
60
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T J = 150°C
T J = 25°C
1000
-I D, Drain-to-Source Current (A)
-I SD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
10
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
10ms
DC
VGS = 0V
0.1
0
1
2
3
4
5
6
-V SD , Source-to-Drain Voltage (V)
0.1
100
-VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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