PD-95818D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHYB67230CM
IRHYB63230CM
Radiation Level
100K Rads (Si)
300K Rads (Si)
R
DS(on)
I
D
0.13Ω 16A
0.13Ω
16A
IRHYB67230CM
200V, N-CHANNEL
TECHNOLOGY
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA Tabless
Features:
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
16
10
64
75
0.6
±20
83
16
7.5
9.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
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1
06/15/10
IRHYB67230CM
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
2.0
—
11
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.19
—
—
-9.76
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.13
4.0
—
—
10
25
100
-100
42
10
20
15
40
35
15
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 10A
Ã
VDS = VGS, ID = 1.0mA
VDS = 10V, IDS = 10A
Ã
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 16A
VDS = 100V
VDD = 100V, ID = 16A,
VGS = 12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nC
ns
nH
Ciss
C oss
C rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
—
1660
206
2.6
1.75
—
—
—
pF
Ω
Measured from Drain lead
( 6mm / 0.025 in from package )
to Source lead ( 6mm/ 0.025 in
from package )
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
16
64
1.2
300
3.2
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 16A, VGS = 0V
Ã
Tj = 25°C, IF = 16A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHYB67230CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-State
Resistance (Low Ohmic TO-257)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
200
2.0
—
—
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=160V, V
GS
=0V
V
GS
= 12V, I
D
= 10A
V
GS
= 12V, I
D
= 10A
V
GS
= 0V, I
D
= 16A
—
4.0
100
-100
10
0.134
0.13
1.2
1. Part numbers IRHYB67230CM and IRHYB63230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
42 ± 5%
61 ± 5%
90 ± 5%
2
Energy
(MeV)
2450 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
205 ± 5%
66 ± 5%
80 ± 5%
@VGS=
@VGS=
VDS (V)
@VGS=
@VGS=
0V
200
200
170
-5V
200
200
170
-10V
200
200
-
-15V
190
190
-
250
Bias VDS (V)
200
150
100
50
0
0
-5
-10
-15
Bias VGS (V)
LET=42 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHYB67230CM
Pre-Irradiation
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
5.0V
5.0V
1
1
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
ID, Drain-to-Source Current (A)
T J = 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 16A
2.0
10
T J = 25°C
1.5
1.0
0.5
1
2
4
6
8
VDS = 50V
15
60µs PULSE WIDTH
10
12
14
16
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHYB67230CM
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
8
12
16
ID = 16A
RDS(on), Drain-to -Source On Resistance (
Ω)
RDS(on), Drain-to -Source On Resistance
(Ω)
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
10
20
30
40
50
60
70
ID, Drain Current (A)
VGS = 12V
TJ = 25°C
T J = 150°C
T J = 150°C
T J = 25°C
20
24
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
250
5.0
240
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
230
220
210
200
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
-60 -40 -20
0
20
40
60
80 100 120 140 160
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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