PD-91401
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY9230CM 100K Rads (Si)
IRHY93230CM 300K Rads (Si)
R
DS(on)
0.8Ω
0.8Ω
IRHY9230CM
JANSR2N7383
200V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD-Hard HEXFET
TECHNOLOGY
™
®
I
D
QPL Part Number
-6.5A JANSR2N7383
-6.5A JANSF2N7383
TO-257AA
International Rectifier’s RAD-Hard
TM
HEXFET
®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-6.5
-4.1
-26
75
0.6
±20
165
-6.5
7.5
-27
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
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1
12/05/00
IRHY9230CM, JANSR2N7383
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
—
-0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.8
-4.0
—
-25
-250
-100
100
45
10
25
30
50
75
65
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -4.1A
➃
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -4.1A
➃
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -6.5A
VDS = -100V
VDD = -100V, ID = -6.5A
RG = 7.5Ω
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV
DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
2.0
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
nA
nC
ns
nH
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1360
190
40
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-6.5
-26
-5.0
400
3.4
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -6.5A, VGS = 0V
➃
Tj = 25°C, IF = -6.5A, di/dt
≥
100A/µs
VDD
≤
-25V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY9230CM, JANSR2N7383
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
Min
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
➃
On-State Resistance (TO-3)
Static Drain-to-Source
➃
On-State Resistance (TO-257AA)
Diode Forward Voltage
➃
100K Rads(Si)
1
300K Rads (Si)
2
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20 V
V
DS
= -160V, V
GS
=0V
V
GS
= -12V, I
D
=-4.1A
V
GS
= -12V, I
D
= -4.1A
V
GS
= 0V, IS = -6.5A
Max
-200
-2.0
—
—
—
—
—
—
—
-4.0
-100
100
- 25
0.804
0.8
-5.0
Min
-200
-2.0
—
—
—
—
—
—
Max
—
-5.0
-100
100
-25
0.804
0.8
-5.0
1. Part number IRHY9230CM
2. Part number IRHY93230CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
=5V @V
GS
=10V
43.0
-200
-200
-200
39.0
-200
-200
-125
@V
GS
=15V
-200
-75
@V
GS
=20V
—
—
-250
-200
VDS
-150
-100
-50
0
0
5
10
VGS
15
20
Cu
Br
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY9230CM, JANSR2N7383
Pre-Irradiation
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
10
-5.0V
-5.0V
1
1
20µs PULSE WIDTH
T = 25 C
J
°
10
100
1
1
10
20µs PULSE WIDTH
T = 150 C
J
°
100
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
-I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -6.5A
2.0
10
T
J
= 150
°
C
1.5
1.0
0.5
1
5.0
V DS = -50V
20µs PULSE WIDTH
8.0
9.0
6.0
7.0
10.0
0.0
-60 -40 -20
V
GS
= -12V
0
20
40
60
80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY9230CM, JANSR2N7383
2500
-V
GS
, Gate-to-Source Voltage (V)
2000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -6.5A
16
C, Capacitance (pF)
V
DS
=-160V
V
DS
=-100V
V
DS
=-40V
1500
Ciss
12
1000
8
500
C
oss
C
rss
4
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
60
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-I
D
, Drain Current (A)
I
10
10
T
J
= 150
°
C
T
J
= 25
°
C
1
100us
1ms
1
10ms
0.1
0.0
V
GS
= 0 V
1.0
2.0
3.0
4.0
5.0
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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