PD-93826E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level
IRHY57130CM 100K Rads (Si)
IRHY53130CM 300K Rads (Si)
IRHY54130CM 500K Rads (Si)
R
DS(on)
0.07Ω
0.07Ω
0.07Ω
I
D
18A*
18A*
18A*
18A*
IRHY57130CM
JANSR2N7484T3
100V, N-CHANNEL
REF: MIL-PRF-19500/702
5
TECHNOLOGY
QPL Part Number
JANSR2N7484T3
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
IRHY58130CM 1000K Rads (Si) 0.085Ω
TO-257AA
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
18*
14
72
75
0.6
±20
87
18
7.5
1.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
°C
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
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1
10/27/11
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
2.0
13
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.07
4.0
—
10
25
100
-100
50
7.4
20
25
100
35
30
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 14A
Ã
VDS = VGS, ID = 1.0mA
VDS
≥
15V, IDS = 14A
Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 50V
VDD = 50V, ID = 18A,
VGS =12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1005
365
50
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
18*
72
1.2
250
850
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 18A, VGS = 0V
Ã
Tj = 25°C, IF = 18A, di/dt
≤
100A/µs
VDD
≤
25V
Ã
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max
—
—
—
—
1.67
80
Units
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57130CM, JANSR2N7484T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (TO-257AA)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
100
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.074
0.064
1.2
100
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.09
0.085
1.2
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 80V, V
GS
=0V
V
GS
= 12V, I
D
=14A
V
GS
= 12V, I
D
=14A
V
GS
= 0V, IS = 18A
1. Part numbers IRHY57130CM (JANSR2N7484T3), IRHY53130CM (JANSF2N7484T3) and IRHY54130CM (JANSG2N7484T3)
2. Part number IRHY58130CM (JANSH2N7484T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
61 ± 5%
84 ± 5%
2
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
0V
100
100
100
-5V
100
100
100
-10V
100
100
80
-15V
100
35
25
-20V
100
25
-
120
100
80
60
40
20
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
5.0V
10
5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
18A
22A
I
D
=
16A
2.0
1.5
1.0
0.5
10
5.0
V DS =
15
50V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHY57130CM, JANSR2N7484T3
2000
1600
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 22A
16A
18A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance (pF)
15
1200
Ciss
10
800
Coss
400
5
Crss
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
ID, Drain-to-Source Current (A)
10
T
J
= 25
°
C
1
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
10ms
DC
1000
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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