SEMICONDUCTOR
HFA15TB120
FRED
Ultrafast Soft Recovery Diode
15A/1200V
RoHS
RoHS
Nell High Power Products
Available
RoHS*
COMPLIANT
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Lead
(Pb)-free
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
TO-220AC (Modified)
cathode
2
DESCRIPTION
HFA15TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 15A continuous current, the HFA15TB120 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (I
RRM
)
and does not exhibit any tendency to “snap-off” during
the t b portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15TB120
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
h
1
Cathode
3
Anode
PRODUCT SUMMARY
V
R
V
F
at
16A
at
25
ºC
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical)
at
125
ºC
I
RRM
(typical)
1200
V
2.3
V
15
A
33
ns
150
ºC
260
nC
76
A/µS
5.8
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
TEST CONDITIONS
VALUES
1200
UNITS
V
Tc
= 100
ºC
15
180
60
A
Tc
= 25
ºC
Tc
= 100
ºC
Maximum power dissipation
151
60
- 55
to
+ 150
W
°C
Operating junction and storage temperature range
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Page 1 of 6
SEMICONDUCTOR
HFA15TB120
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 15
A
1200
-
-
-
-
-
-
-
-
1.8
2.7
1.8
1.00
375
27
8.0
-
2.30
3.2
2.3
20
2000
40
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 30
A
I
F
= 15
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
Measured lead to lead
5
mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = 200 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 16A
dI
F
/dt = 200 A/µs
V
R
= 200 V
-
-
-
-
-
-
-
-
-
-
38
33
90
164
5.8
8.3
260
680
120
76
45
-
ns
135
245
10
15
675
1838
-
-
A/µs
nC
A
Q
rr1
Q
rr2
dl
(rec)M
/dt1
dl
(rec)M
/dt2
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AC
Modified
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
TEST CONDITIONS
0.063"
from case
(1.6
mm) for
10
s
MIN.
-
-
TYP.
-
-
-
0.50
2.0
0.07
-
MAX.
300
0.83
80
-
-
-
12
(10)
UNITS
ºC
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
K/W
g
oz.
kgf
.
cm
(lbf .
in)
HFA15TB120
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Page 2 of 6
SEMICONDUCTOR
HFA15TB120
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum forward voltage drop vs.
lnstantaneous forward current
lnstantaneous forward current,l
F
(A)
100
Fig.2 Typical reverse current vs. reverse
voltage
1000
T
J
= 150
°С
Reverse current, l
R
(μA)
100
T
J
= 125
°C
10
10
1
T
J
= 25
ºC
1
T
J
= 150
°С
T
J
= 125
°С
T
J
= 25
°С
0.1
0.1
0
1
2
3
4
0.01
0
200
400
600
800
1000
1200
Forward voltage drop, V
FM
(V)
Reverse voltage (V)
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
1000
Junction capacitance, C
T
(pF)
100
T
J
= 25
ºC
10
1
1
10
100
1000
10000
Reverse voltage, V
R
(V)
Fig.4 Maximum thermal lmpedance Z
thJC
characteristics
1
Thermal response, Z
thJC
0.1
Single pulse
(thermal
response)
D
= 0.50
D
= 0.20
D
= 0.10
D
= 0.05
D
= 0.02
D
= 0.01
P
DM
t
1
t
2
Notes:
1.
Duty factor D
=
t
1
/
t
2
2.
Peak T
J
=
P
DM
x Z
thJC
+
T
c
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Rectangular pulse duration, t
1
(sec)
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Page 3 of 6
SEMICONDUCTOR
HFA15TB120
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
V
R
= 200
V
0.01
Ω
L
= 70
μH
D.U.T.
dIF
/dt
adjust
D
G
IRFP250
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dIF
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
trr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
RRM
I
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rr
x l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during tb portion of t
rr
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Page 5 of 6
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