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HYMP125U64CP8-5: 产品描述DDR DRAM, 256MX64, CMOS, ROHS COMPLIANT, DIMM-240; 产品类别存储存储; 文件大小261KB，共29页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/; 标准

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HYMP125U64CP8-5概述

DDR DRAM, 256MX64, CMOS, ROHS COMPLIANT, DIMM-240

HYMP125U64CP8-5规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SK Hynix(海力士)
零件包装代码	DIMM
包装说明	ROHS COMPLIANT, DIMM-240
针数	240
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N240
内存密度	17179869184 bit
内存集成电路类型	DDR DRAM
内存宽度	64
功能数量	1
端口数量	1
端子数量	240
字数	268435456 words
字数代码	256000000
工作模式	SYNCHRONOUS
最高工作温度	55 °C
最低工作温度
组织	256MX64
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	NOT SPECIFIED
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	1.9 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED

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240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version

This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb version C DDR2

SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver-

sion C based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm

width form factor of industry standard. It is suitable for easy interchange and addition.

FEATURES

•

JEDEC standard Double Data Rate2 Syn-

chrnous DRAMs (DDR2 SDRAMs) with 1.8V +/

- 0.1V Power Supply

All inputs and outputs are compatible with

SSTL_1.8 interface

8 Bank architecture

Posted CAS

Programmable CAS Latency 3 ,4 ,5, 6

OCD (Off-Chip Driver Impedance Adjustment)

ODT (On-Die Termination)

Fully differential clock operations (CK & CK)

•

Programmable Burst Length 4 / 8 with both

sequential and interleave mode

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

Serial presence detect with EEPROM

DDR2 SDRAM Package: 60ball

FBGA(128Mx8), 84ball FBGA(64Mx16)

133.35 x 30.00 mm form factor

RoHS compliant

•

ORDERING INFORMATION

Part Name

HYMP164U64CP6-C4/Y5/S6/S5

HYMP164U64CR6-C4/Y5/S6/S5

HYMP112U64CP8-C4/Y5/S6/S5

HYMP112U64CR8-C4/Y5/S6/S5

HYMP112U72CP8-C4/Y5/S6/S5

HYMP125U64CP8-C4/Y5/S6/S5

HYMP125U64CR8-C4/Y5/S6/S5

HYMP125U72CP8-C4/Y5/S6/S5

Density

512MB

1GB

2GB

Org.

64Mx64

128Mx64

128Mx72

256Mx64

256Mx72

# of

DRAMs

# of

ranks

Materials

Lead-free

Halogen-free

Lead-free

Halogen-free

Lead-free

Halogen-free

Lead-free

ECC

None

ECC

None

ECC

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.6 / Jul. 2008

HYMP125U64CP8-5相似产品对比

	HYMP125U64CP8-5	HYMP164U64CR6-C4	HYMP164U64CP6-S6	HYMP112U72CP8-S5	HYMP112U72CP8-Y5	HYMP125U64CR8-S6	HYMP164U64CR6-Y5	HYMP125U64CP8-Y5
描述	DDR DRAM, 256MX64, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 64MX64, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 64MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 128MX72, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 128MX72, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 256MX64, 0.4ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM, 64MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240	DDR DRAM Module, 256MX64, 0.45ns, CMOS, ROHS COMPLIANT, DIMM-240
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	ROHS COMPLIANT, DIMM-240	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40
针数	240	240	240	240	240	240	240	240
Reach Compliance Code	compliant	unknown	compliant	unknown	unknown	unknown	unknown	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N240	R-XDMA-N240	R-XZMA-N240	R-XZMA-N240	R-XZMA-N240	R-XDMA-N240	R-XDMA-N240	R-XZMA-N240
内存密度	17179869184 bit	4294967296 bit	4294967296 bit	9663676416 bit	9663676416 bit	17179869184 bit	4294967296 bit	17179869184 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM	DDR DRAM	DDR DRAM MODULE
内存宽度	64	64	64	72	72	64	64	64
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	240	240	240	240	240	240	240	240
字数	268435456 words	67108864 words	67108864 words	134217728 words	134217728 words	268435456 words	67108864 words	268435456 words
字数代码	256000000	64000000	64000000	128000000	128000000	256000000	64000000	256000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C	55 °C
组织	256MX64	64MX64	64MX64	128MX72	128MX72	256MX64	64MX64	256MX64
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	260	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG
处于峰值回流温度下的最长时间	NOT SPECIFIED	20	20	20	20	20	20	20
最长访问时间	-	0.5 ns	0.4 ns	0.4 ns	0.45 ns	0.4 ns	0.45 ns	0.45 ns
最大时钟频率 (fCLK)	-	266 MHz	200 MHz	400 MHz	333 MHz	400 MHz	333 MHz	333 MHz
I/O 类型	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
输出特性	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装等效代码	-	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40
电源	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
刷新周期	-	8192	8192	8192	8192	8192	8192	8192
最大待机电流	-	0.04 A	0.04 A	-	-	0.16 A	0.04 A	0.18 A
端子节距	-	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Base Number Matches	-	1	1	1	1	1	1	1

HYMP125U64CP8-5

HYMP125U64CP8-5概述

HYMP125U64CP8-5规格参数

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