SEMICONDUCTOR
30ETU06
FRED
Ultrafast Soft Recovery Diode
30A / 600V
RoHS
RoHS
Nell High Power Products
Available
RoHS*
COMPLIANT
FEATURES
Ultrafast recovery
Ultrasoft recovery
Ver low l
RRM
Ver low Q
rr
Compliant to RoHS
Designed and qualified for industrial level
Planar FRED Chip
30ETU06
30ATU06
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
Base
cathode
2
Base
cathode
2
1
Cathode
3
Anode
1
Anode
3
Anode
DESCRIPTION
30ETU06 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V
and 30A continuous current, the 30ETU06 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (I
RRM
)
and does not exhibit any tendency to “snap-off” during
the t b portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED 30ETU06
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
TO-220AC Modified
TO-220AB
PRODUCT SUMMARY
V
R
V
F
at
30A
at
25
°C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
dI
(rec)M
/dt
600
V
1.7
V
30
A
25
ns
175
°C
130
nC
260
A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
,
T
Stg
T
C
= 25
ºC
T
C
= 100
ºC
T
C
= 116
ºC
T
C
= 25
ºC
TEST CONDITIONS
VALUES
600
30
300
110
145
57
- 55
to
175
ºC
W
A
UNITS
V
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Page 1 of 6
SEMICONDUCTOR
30ETU06
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
RoHS
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 30
A
600
-
-
-
-
-
-
-
-
1.40
1.75
1.15
1.0
20
35
8
-
1.70
2.0
1.40
10
500
-
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 60
A
I
F
= 30
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 150°C,
V
R
= V
R
rated
V
R
= 200V
Measured lead to lead
5
mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = 100 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 30A
dI
F
/dt = 200 A/µs
V
R
= 400 V
-
-
-
-
-
-
-
-
-
-
32
25
30
175
3
6
130
485
260
160
38
-
ns
60
125
6.0
10
180
600
-
-
A/µs
nC
A
Q
rr1
Q
rr2
dl
(rec)M
/dt1
dl
(rec)M
/dt2
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AC Modified
Case style TO-220AB
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and gerased
TEST CONDITIONS
0.063"
from case
(1.6
mm) for
10
s
MIN.
-
-
-
-
-
-
6
(5)
TYP.
-
0.5
-
0.4
2
0.07
-
MAX.
300
0.8
80
-
-
-
12
(10)
30ETU06
30ATU06
g
oz.
kgf
.
cm
(lbf .
in)
K/W
UNITS
°C
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
30ETU06
RoHS
RoHS
Nell High Power Products
Fig.1 Typical forward voltage drop characteristics
Fig.2 Typical values of reverse current vs.
reverse voltage
1000
T
J
=175°
lnstantaneous forward current, I
F
(A)
1000
Reverse current, l
R
(µA)
100
10
1
0.1
0.01
0.001
0.0001
0
T
J
=25°
T
J
=150°
T
J
=125°
T
J
=100°
100
10
T
J
=175°
T
J
=125°
T
J
=25°
1
0
0.5
1
1.5
2
2.5
3
3.5
100
200
300
400
500
600
Forward voltage drop, V
F
(V)
Reverse voltage, V
R
(V)
Fig.3 Typical junction capacitance vs. reverse voltage
1000
Fig.4 Junction capacitance vs. reverse voltage
200
Junction Capactiance, C
T
(pF)
Junction Capactiance, C
T
(pF)
180
160
140
120
100
80
60
40
20
0
1
10
100
200
100
T
J
=25°
10
0
100
200
300
400
500
600
Reverse voltage, V
R
(V)
Reverse voltage, V
R
(V)
Fig.5 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
Thermal impedance, Z
θJC
(°C/W)
0.80
D = 0.9
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10
-5
0.1
0.05
10
-4
SINGLE PULSE
0.5
Note:
0.7
P
DM
0.3
t
1
t
2
Duty Factor D = t
1
/t
2
Peak T
J
= P
DM
x Z
θJC
+ T
C
10
-3
10
-2
10
-1
1.0
Rectangular pulse duration (seconds)
www.nellsemi.com
Page 3 of 6
SEMICONDUCTOR
30ETU06
RoHS
RoHS
Nell High Power Products
Fig.6 Max. allowable case temperature
Vs. average forward current
180
Fig.7 Reverse recovery time vs. current rate of change
200
180
60A
T
J
= 125°C
V
R
= 400V
30A
140
120
100
80
60
40
20
0
5
10
15
20
25
30
35
40
45
0
0
200
400
600
800
1000
1200
15A
Allowable case temperature
(°C)
Reverse recovery time, t
rr
(ns)
160
DC
140
Square wave (D = 0.5)
Rated V
R
applied
160
120
100
80
Average forward current, I
F(AV)
(A)
Current rate of change, -di
F
/dt (A/μs)
Fig.8 Maximum average forward current vs.
case temperature
60
1200
Fig.9 Reverse recovery charge vs.
current rate of change
T
J
= 125°C
V
R
= 400V
60A
800
30A
(nC)
600
400
200
0
15A
Reverse recovery charge, Q
rr
50
40
Duty cycle = 0.5
T
J
=175°C
1000
l
F(AV)
(A)
30
20
10
0
25
50
75
100
125
150
175
0
200
400
600
800
1000
1200
Case temperature (°C)
Current rate of change, -di
F
/dt (A/μs)
Ordering Information Table
Device code
30
1
1
2
3
4
5
-
-
-
-
-
E
2
T
3
U
4
06
5
Current rating
Single Diode
(30 = 30A)
E = 2 pins
A = 3 pins
TO-220AC Modified or TO-220AB
Ultrafast Recovery
Voltage Rating
(06 = 600
V)
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Page 4 of 6
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