SEMICONDUCTOR
30EPU12 Series
FRED
Ultrafast Soft Recovery Diode
30A / 1200V
RoHS
RoHS
Nell High Power Products
FEATURES
Ultrafast recovery
150°C operating junction temperature
Designed and qualified for industrial level
Compliant to RoHS
Planar FRED Chip
30EPU12
30APU12
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI /
R FI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
1
Anode
3
Anode
TO-247AC modified
TO-247AB
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
36
ns
30
A
1200
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
R
l
F(AV)
l
FSM
T
j
, T
Stg
T
C
= 100
°C
T
C
= 25
°C
TEST CONDITIONS
VALUES
1200
30
280
- 55
to
150
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage
V
BR
l
R
= 100µA
l
F
= 30A
1200
-
-
-
-
-
-
1.95
2.60
-
1.0
-
-
2.35
-
2.00
25
1000
-
-
pF
nH
µA
V
Forward voltage
V
F
l
F
= 60A
l
F
= 30A, T
J
= 125°C
Reverse leakage current
Junction capacitance
Series inductance
l
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150°C, V
R
= V
R
rated
V
R
= 200V
Measure lead to lead 5mm from package body
-
-
30
10
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Page 1 of 6
SEMICONDUCTOR
30EPU12 Series
RoHS
RoHS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
I
F
= 0.5A, I
R
= 1A, I
RR
=0.25A (RG#1 CKT)
Reverse recovery time
t
rr
I
F
= 1A, dI
F
/dt = 200 A/µs, V
R
=30V, T
J
=25°C
T
J
= 25°C
T
J
= 125°C
Peak recovery current
l
RRM
Q
rr
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 30
A
dI
F
/dt = 200
A/µs
V
R
= 800
V
-
-
-
-
-
-
-
-
52
36
320
435
4
9
545
2100
60
-
-
-
-
-
-
-
A
ns
Reverse recovery charge
nC
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth
and greased
-
-
-
-
-
0.6
(5)
Case style TO-247AC modified
Case style TO-247AB
0.5
-
0.4
5.5
0.2
-
30EPU12
30APU12
0.8
40
°C/W
-
-
-
1.2
(10)
g
oz.
N⋅ m
(lbf .
in)
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Page 2 of 6
SEMICONDUCTOR
30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.0
Thermal impedance, Z
θJC
(°C/W)
0.5
D=0.5
0.2
0.1
0.05
0.1
0.05
0.02
0.01
P
DM
Note:
t
1
t
2
2
0.01
0.005
SINGLE PULSE
Duty Factor D =t
1
/t
2
Peak T
J
= P
DM
xZ
thJC
+T
C
0.001
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
Fig.3 Reverse recovery time vs. current rate of change
200
600
Reverse recovery time, t
rr
(ns)
180
T
J
=125°C
V
R
=800V
60A
500
400
30A
300
15A
200
100
0
Forward current, I
F
(A)
160
140
120
100
80
60
40
T
J
=-55°C
T
J
=125°C
T
J
=25°C
T
J
=175°C
20
0
0
1
2
3
4
5
0
200
400
600
800
1000
1200
Anode-to-cathode voltage, V
F
(V)
Current rate of change, -di
F
/dt (A/μs)
Fig.4 Reverse recovery charge vs. current rate of change
Fig 5. Reverse recovery current vs. current rate of change
5000
Reverse recovery charge, Q
rr
(nC)
60A
Reverse recovery current, I
RRM
(A)
T
J
=125°C
V
R
=800V
35
30
25
T
J
=125°C
V
R
=800V
4000
60A
30A
20
15
15A
10
5
0
3000
30A
2000
15A
1000
0
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Current rate of change, -di
F
/dt (A/μs)
Current rate of change, -di
F
/dt (A/μs)
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Page 3 of 6
SEMICONDUCTOR
30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.2
Q
rr
Fig.7 Maximum average forward current vs. case temperature
175
Dynamic parameters, K f
(Normalized to 1000A/µs)
t
rr
1.0
t
rr
0.8
0.6
I
RRM
150
Duty cycle = 0.5
T
J
=150°C
Case temperature (°C)
125
DC
100
75
50
0.4
Q
rr
0.2
0.0
0
25
50
75
100
125
150
25
0
5
10 15
20 25 30
35 40 45 50
Junction temperature,T
J
(°C)
l
F(AV)
(A)
Fig.8 Junction capacitance vs. reverse voltage
200
Junction capacitance, C
J
(pF)
180
160
140
120
100
80
60
40
20
0
1
10
reverse voltage, V
R
(V)
100
200
Ordering Information Table
Device code
30
1
E
2
P
3
U
4
12
5
1
2
3
4
5
-
-
-
-
-
Current rating
Single Diode
(30 = 30A)
E = 2 pins
A = 3 pins
TO-247AB or TO-247AC Modified
Ultrafast Recovery
Voltage Rating
(12 = 1200
V)
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Page 4 of 6
SEMICONDUCTOR
30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
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Page 5 of 6
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