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PD - 90552C

REPETITIVE A ALANCHE AND dv/dt RATED

V

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

Product Summary

Part Number

IRFF9120

BVDSS

-100V

R

DS(on)

0.60Ω

I

D

-4.0A



IRFF9120

JANTX2N6845

JANTXV2N6845

REF:MIL-PRF-19500/563

100V, P-CHANNEL

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.



TO-39

Features:

n

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

ID @ VGS = -10V, TC = 25°C

ID @ VGS = -10V, TC = 100°C

I DM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

T STG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

-4.0

-2.6

-16

20

0.16

±20

115

—

-5.0

-55 to 150

o

Units

A

W

W/°C

V

mJ

A

mJ

V/ns

C

g

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

www.irf.com

1

01/22/01

IRFF9120

Electrical Characteristics

Parameter

BVDSS

∆BV

DSS/∆T J

RDS(on)

VGS(th)

gfs

IDSS

@ Tj = 25°C (Unless Otherwise Specified)

Min

-100

—

-2.0

1.25

—

4.3

1.3

1.0

—

Typ Max Units

—

-0.10

—

7.0

—

0.60

0.69

-4.0

—

-25

-250

-100

100

16.3

4.7

9.0

60

100

50

70

—

V

V/°C

Ω

V

S( )

µA

Ω

Test Conditions

VGS = 0V, ID = -1.0mA

Reference to 25°C, ID = -1.0mA

VGS = -10V, ID = -2.6A

➃

VGS =-10V, ID =-4.0A

➃

VDS = VGS, ID = -250µA

VDS > -15V, IDS = -2.6A

➃

VDS= -80V, VGS=0V

VDS = -80V

VGS = 0V, TJ = 125°C

VGS = -20V

VGS = 20V

VGS =-10V, ID = -4.0A

VDS= -50V

VDD = -50V, ID = -4.0A,

RG =7.5Ω

Drain-to-Source Breakdown Voltage

Temperature Coefficient of Breakdown

Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

IGSS

Qg

Qgs

Qgd

td

(on)

tr

td

(off)

tf

LS + LD

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

nA

nC

ns

nH

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

380

170

45

—

pF

VGS = 0V, VDS = -25V

f = 1.0MHz

Source-Drain Diode Ratings and Characteristics

Parameter

IS

ISM

VSD

t rr

QRR

ton

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode)

➀

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Min Typ Max Units

—

-4.0

-16

-4.8

200

3.1

Test Conditions

A

V

nS

µC

T

j

= 25°C, IS =-4.0A, VGS = 0V

➃

Tj = 25°C, IF = -4.0A, di/dt

≤

-100A/µs

VDD

≤

-50V

➃

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter

RthJC

R thJA

Junction-to-Case

Junction-to-Ambient

Min Typ Max Units

—

6.25

175

°C/W

Test Conditions

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2

www.irf.com

IRFF9120

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

Vs. Temperature

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3

IRFF9120

13 a& b

Fig 5.

Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

4

www.irf.com

IRFF9120

V

DS

V

GS

R

G

R

D

D.U.T.

+

-10V

Pulse Width

≤ 1

µs

Duty Factor

≤ 0.1 %

Fig 10a.

Switching Time Test Circuit

t

d(on)

t

r

t

d(off)

t

f

V

GS

10%

90%

Fig 9.

Maximum Drain Current Vs.

Case Temperature

V

DS

Fig 10b.

Switching Time Waveforms

Fig 11.

Maximum Effective Transient Thermal Impedance, Junction-to-Case

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-

V

DD

5

JANTX2N6845_15

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