PD-97808
Radiation Hardended,
Solid-State Relay
with Buffered Inputs
Product Summary
Part
Number
RDHB710SE20A2SX
5
RDHB710SE20A2SX
Dual, 200V, 10A
Breakdown
Voltage
200V
Current
10A
tr / tf
Controlled
Logic Drive
Voltage
3.3V
8-PIN SURFACE MOUNT
Description
The RDHB710SE20A2SX is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 Krad(Si)
total ionizing dose, and neutron fluence level of
1.8E
12
n/cm
2
. The input and output MOSFETs utilize
International Rectifier’s R6 technology. T h e
RDHB710SE20A2SX is optically coupled and
actuated by standard logic inputs.
Features:
n
n
n
n
n
n
n
n
Total Dose Capability to 100 Krad (Si)
Neutron Fluence Level of 1.8E
12
n/cm
2
Optically Coupled
1000V
DC
Input to Output Isolation
Buffered Input Stage
3.3V Compatible Logic Level Input
Controlled Switching Times
Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ T
J
= 25°C
(unless otherwise specified)
Parameter
Output Voltage
5, 8
Output Current
4, 5
Input Buffer Voltage - (Pins 4 & 6)
3
Input Buffer Current
Input Supply Voltage (Pin 5)
7
Input Supply Current
7
Power Dissipation
4, 5
Operating Temperature Range
Storage Temperature Range
Lead Temperature
Symbol
V
S
I
O
V
IN
I
IN
V
DD
I
DD
P
DISS
T
J
T
S
T
L
Value
200
10
±7.0
±10
10
25
73
-55 to +150
-65 to +150
300
Units
V
A
V
mA
V
mA
W
°C
For Notes, please refer to page 3
www.irf.com
1
04/22/13
RDHB710SE20A2SX
Dual, 200V, 10A
General Characteristics per Channel @ -55°C
£
T
C
£
+125°C
(unless otherwise specified)
Parameter
Input Buffer Threshold Voltage
1, 3
Input-to-Output Leakage Current
1
Group A
Subgroups
Test Conditions
V
DD
= 5.0V, I
O
= 10A
V
I-O
= 1.0KVdc, dwell = 5.0s
T
C
= 25°C
V
IN
= 0.1V, f = 1.0MHz,
V
S
= 25V, T
C
= 25°C
V
IN
= 3.3V, V
DD
= 5.0V
1, 4
MIL-HDBK-217F, SF@Tc= 25°C
Symbol Min. Typ. Max. Units
V
IN(TH)
I
I-O
3.0
1.0
V
µA
Output Capacitance
1
Thermal Resistance
1
MTBF (Per Channel)
Weight
C
OSS
R
THJC
6.0
W
210
1.4
pF
°C/W
MHrs
25
gms
Pre-Irradiation
Electrical Characteristics per Channel @ -55°C
£
T
C
£
+125°C
(unless otherwise specified)
Parameter
Group A
Subgroups
Output On-Resistance
1
2
1
2
1, 2, 3
1
Input Buffer Current
2, 3
1, 2, 3
V
IN
= 3.3V
V
IN
= 3.3V, V
DD
= 5.0V, V
S
= 50V
R
L
= 5Ω, PW = 50ms
V
IN
= 0.1V, V
DD
= 5.0V, V
S
= 50V
R
L
= 5Ω, PW = 50ms
V
IN
= 3.3V, V
DD
= 5.0V, V
S
= 50V
R
L
= 5Ω, PW = 50ms
V
IN
= 0.1V, V
DD
= 5.0V, V
S
= 50V
R
L
= 5Ω, PW = 50ms
I
IN
V
IN
= 3.3V
V
DD
= 5.0V, I
O
= 10A
V
IN
= 0.1V, V
S
= 200V
V
IN
= 0.1V, V
S
= 150V
V
DD
= 5.0V, I
O
= 10A
V
DD
= 10V, I
O
= 10A
1, 7
R
DS(ON)
0.15
0.29
25
250
10
15
25
1.0
3.0
1.5
Ω
Test Conditions
Symbol Min. Typ. Max. Units
Output Leakage Current
I
O
µA
Input Supply Current
I
DD
mA
µA
Turn-On Delay
6
t
on
Turn-Off Delay
6
1, 2, 3
t
off
10
ms
Rise Time
2, 6
1, 2, 3
t
r
0.5
Fall Time
2, 6
1, 2, 3
t
f
2.5
For Notes, please refer to page 3
2
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RDHB710SE20A2SX
Dual, 200V, 10A
Post Total Dose Irradiation
9, 10, 11
Electrical Characteristics per Channel @ 25°C
(unless otherwise specified)
Parameter
Output On-Resistance
Input Supply Current
Output Leakage Current
Input Buffer Current
Turn-On Delay
6
Group A
Subgroups
1
1
1
1
1
Test Conditions
V
IN
= 3.3V, V
DD
= 5.0V, I
O
= 10A
V
IN
= 3.3V, V
DD
= 5.0V, I
O
= 10A
V
IN
= 0.1V, V
S
= 200V
V
IN
= 3.3V
V
IN
= 3.3V, V
DD
= 5.0V, V
S
= 50V
RL = 5Ω, PW = 50ms
V
IN
= 0.1V, V
DD
= 5.0V, V
S
= 50V
RL = 5Ω, PW = 50ms
V
IN
= 3.3V, V
DD
= 5.0V, V
S
= 50V
RL = 5Ω, PW = 50ms
V
IN
= 0.1V, V
DD
= 5.0V, V
S
= 50V
RL = 5Ω, PW = 50ms
Symbol Min. Typ. Max. Units
R
DS(ON)
I
DD
I
O
I
IN
t
on
10
0.15
15
25
1.0
1.5
Ω
mA
µA
Turn-Off Delay
6
1
t
off
10
ms
Rise Time
2, 6
1
t
r
0.5
Fall Time
2, 6
1
t
f
2.5
Notes for Maximum Ratings and Electrical Characteristic Tables
1. Specification is guaranteed by design.
2. Rise and fall times are controlled internally.
3. Inputs protected for V
IN
< 1.0V and V
IN
> 7.0V.
4. Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to
insure that transient currents do not cause violation of SOA. If transient conditions are present, IR recommends a
complete simulation to be performed by the end user to insure compliance with SOA requirements as specified in the
IRHNJ67230 data sheet.
5. While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for
product derating, as required for the application.
6. Reference Figures 3 & 4 for Switching Test Circuits and Wave Form; Output Voltage (V
O
) of Figure 4, Switching
Test Wave Form is representative of the Output MOSFET and Drain-to-Source.
7. Input Supply voltage shall not exceed 5.25V@Tc
≥
70°C.
8. Breakdown voltage (BV
DSS
) of Output MOSFET, @ -55°C, shall be derated to 80% of Maximum Rated Voltage.
9. Total Dose Irradiation with Input Bias. 10mA I
DD
applied and V
DS
= 0 during Irradiation.
10. Total Dose Irradiation with Output Bias. 160Volts V
DS
applied and I
DD
= 0 during Irradiation.
11. International Rectifier does not currently have a DLA certified Radiation Hardness.
Radiation Performance
International Rectifier Radiation Hardened Solid State Relays are tested to verify their hardness capability.
The hardness assurance program at IR uses a Cobalt-60 (
60
Co) Source and heavy ion irradiation. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions to provide a direct comparision.
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3
RDHB710SE20A2SX
Dual, 200V, 10A
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
Figure 1:
Maximum Drain Current Vs Case Temperature per Channel
Pin 1 - OUT 1+
Pin 4 - INPUT 1
Opto
Isolation
Pin 3 - GND
Pin 5 - V
DD
Pin 6 - INPUT 2
Opto
Isolation
Pin 2 - OUT 1-
Pin 8 - OUT 2+
Pin 7 - OUT 2-
Figure 2:
Typical Application
4
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RDHB710SE20A2SX
Dual, 200V, 10A
VDD=+5V
VS=+50V
5
1
2
4
3
8
RL
5 Ohm
7
6
Figure 3:
Switching Test Circuit (Only one channel shown)
50%
50%
V_IN
90%
50%
10%
90%
50%
10%
V_OUT
tr
ton
tf
toff
Figure 4:
Switching Test Waveform
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