Diod e
Silicon Carbide Schottky Diode
IDH05G120C5
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Final Da ta s heet
Rev. 2.0 2015-08-28
Indust rial Po wer C o ntrol
IDH05G120C5
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!
TM
SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size / cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks:
www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 and backside – cathode
Pin 2 – anode
Key Performance and Package Parameters
Type
IDH05G120C5
V
DC
1200V
I
F
5A
Q
C
24nC
T
j,max
175°C
Marking
D0512C5
Package
PG-TO220-2-1
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2015-08-28
IDH05G120C5
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description .................................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum Ratings ....................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics............................................................................................................................. 5
Electrical Characteristics Diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer ................................................................................................................................................. 10
Final Data Sheet
3
Rev. 2.0, 2015-08-28
IDH05G120C5
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Repetitive peak reverse voltage
Continues forward current for R
th(j-c,max)
T
C
= 161°C, D=1
T
C
= 135°C, D=1
T
C
= 25°C, D=1
Surge non-repetitive forward current,
sine halfwave
T
C
=25°C, t
p
=10ms
T
C
=150°C, t
p
=10ms
Non-repetitive peak forward current
T
C
= 25°C,
t
p
=10 µs
i²t value
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
Diode dv/dt ruggedness
V
R
=0…960V
Power dissipation
T
C
= 25°C
Operating temperature
Storage temperature
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M3 and M4 screws
Symbol
V
RRM
Value
1200
5.0
9.2
19.1
Unit
V
I
F
A
I
F,SM
I
F,max
∫ i²dt
dv/dt
P
tot
T
j
T
stg
T
sold
M
59
50
472
17.4
12.5
80
109
-55…175
-55…150
260
0.7
A
A
A²s
V/ns
W
°C
°C
°C
Nm
Thermal Resistances
Parameter
Characteristic
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
th(j-c)
R
th(j-a)
leaded
-
-
1.06
-
1.37
62
K/W
K/W
Symbol Conditions
Value
min.
typ.
max.
Unit
Final Data Sheet
4
Rev. 2.0, 2015-08-28
IDH05G120C5
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristics, at T
j
=25°C, unless otherwise specified
Parameter
Static Characteristic
DC blocking voltage
Diode forward voltage
Reverse current
V
DC
V
F
I
R
T
j
= 25°C
I
F
= 5A,
T
j
=25°C
I
F
= 5A,
T
j
=150°C
V
R
=1200V,
T
j
=25°C
V
R
=1200V,
T
j
=150°C
1200
-
-
-
1.50
1.95
2.5
12
-
1.8
2.6
33
175
V
V
µA
Symbol Conditions
Value
min.
typ.
max.
Unit
Dynamic Characteristics, at T
j
=25°C, unless otherwise specified
Parameter
Dynamic Characteristics
Total capacitive charge
Q
C
V
R
=800V,
T
j
=150°C
V
R
Symbol Conditions
Value
min.
typ.
max.
Unit
Q
C
½
C
(
V
)
dV
0
-
-
-
-
24
301
21
17
-
-
-
-
nC
Total Capacitance
C
V
R
=1 V,
f=1
MHz
V
R
=400 V,
f=1
MHz
V
R
=800 V,
f=1
MHz
pF
Final Data Sheet
5
Rev. 2.0, 2015-08-28
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