MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2111LT1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
PIN 1
damage to the die.
BASE
•
Available in 8 mm embossed tape and reel. Use the
(INPUT)
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
MMUN2111LT1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
3
1
2
PIN 2
EMITTER
(GROUND)
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
Symbol
R
θJA
TJ, Tstg
TL
Value
625
– 65 to +150
260
10
Unit
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1(2)
Marking
A6A
A6B
A6C
A6D
A6E
R1 (K)
10
22
47
10
10
R2 (K)
10
22
47
47
∞
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
Motorola Small–Signal
©
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES
(Continued)
Device
MMUN2116LT1(2)
MMUN2130LT1(2)
MMUN2131LT1(2)
MMUN2132LT1(2)
MMUN2133LT1(2)
MMUN2134LT1(2)
Marking
A6F
A6G
A6H
A6J
A6K
A6L
R1 (K)
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
∞
1.0
2.2
4.7
47
47
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
ICBO
ICEO
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
—
—
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (IC = 10
µA,
IE = 0)
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
—
60
100
140
140
250
250
5.0
15
27
140
130
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1
(IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/
MMUN2132LT1/MMUN2133LT1/MMUN2134LT1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
MMUN2111LT1
MMUN2112LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
MMUN2113LT1
VCE(sat)
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
2. New devices. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMUN2111LT1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MMUN2115LT1
MMUN2116LT1
MMUN2131LT1
MMUN2132LT1
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MMUN2130LT1
Input Resistor
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
Symbol
VOH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
k
Ω
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1
MMUN2114LT1
MMUN2115LT1/MMUN2116LT1
MMUN2130LT1/MMUN2131LT1/MMUN2132LT1
MMUN2133LT1
R1/R2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
250
PD , POWER DISSIPATION (MILLIWATTS)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
75°C
0.1
200
25°C
150
100
R
θJA
= 625°C/W
50
0
–50
0
50
100
150
0.01
0
20
40
60
80
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
4
VCE = 10 V
3
f = 1 MHz
lE = 0 V
TA = 25°C
1000
h FE, DC CURRENT GAIN (NORMALIZED)
100
TA = 75°C
25°C
–25°C
Cob , CAPACITANCE (pF)
100
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
IC , COLLECTOR CURRENT (mA)
10
25°C
TA = –25°C
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
1
10
TA = –25°C
25°C
75°C
0.1
1
0.01
0.001
0
1
2
VO = 5 V
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
IC/IB = 10
TA = –25°C
25°C
1
75°C
h FE , DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
25°C
100
–25°C
0.1
0.01
10
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
IC , COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
10
1
2
0.1
VO = 5 V
1
0.01
0
1
2
3
4
5
6
7
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
8
9
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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