advance specification
GTVA221701FA
Description
The GTVA221701FA is a 170-watt (P
3dB
) GaN high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a
thermally-enhanced package with earless flange.
Advance Specification Data
Sheets
describe products that
are being considered by Infineon
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Infineon about the future
availability of these products.
Features
•
Input matched
•
Typical Pulsed CW performance, 1805 MHz, 48 V, single side
- Output power at P
3dB
= 200 W
- Efficiency = 70%
- Gain = 18 dB
•
Capable of handling 10:1 VSWR @48 V, 140 W (CW) output
power
•
GaN HEMT technology
•
High power density
•
High efficiency
•
RoHS-compliant
GTVA261701FA
Package H-37265J-2
Target RF Characteristics
Single- carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 48 V, I
DQ
= 300 mA, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 9.9 dB @ 0.01% CCDF
Characteristics
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
ƒ
2
= 2170 MHz, P
OUT
= 50 W avg
ƒ
1
= 1805 MHz, P
OUT
= 50 W avg
Conditions
Symbol
G
ps
h
D
ACPR
G
ps
h
D
ACPR
Min
—
—
—
—
—
—
Typ
19
38
–32
19
36
–28
Max
—
—
—
—
—
—
Unit
dB
%
dBc
dB
%
dBc
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Advance Specification
1 of 4
Rev. 01, 2015-07-27
advance specification
Thermally-Enhanced High Power RF GaN HEMT
170 W, 50 V, 1805 – 2170 MHz
GTVA221701FA
advance specification
DC Characteristics
(measured on wafer prior to packaging)
Characteristic
Drain-source Breakdown Voltage
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Conditions
V
GS
= –8 V, I
D
= 20 mA
V
DS
= 10 V, I
D
= 20 mA
V
DS
= 50V, I
D
= 1.0 A
V
DS
= 6.0 V, V
GS
= 2.0 V
Symbol
V
(BR)DSS
V
GS(th)
V
GS(Q)
I
DS
Min
150
–3.8
—
15
Typ
—
–3.0
–2.8
18
Max
—
–2.3
Unit
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Gate Current
Drain Current
Junction Temperature
Storage Temperature Range
Thermal Resistance
Symbol
V
DSS
V
GS
Ordering Information
Type and Version
GTVA221701FA V1 R0
GTVA221701FA V1 R2
TBD
TBD
Order Code
a
d
v
a
n
c
e
s
p
e
IG
Id
T
J
T
STG
R
qJC
V
DD
c
fi
i
c
20
7.5
Value
125
a
t
—
—
o
i
V
V
A
n
Unit
V
V
V
mA
A
°C
°C
°C/W
–10 to +2
0 to +50
225
–65 to +150
TBD
Package Description
H-37265J-2, earless flange
H-37265J-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Advance Specification
2 of 4
Rev. 01, 2015-07-27
GTVA221701FA
advance specification
Package Outline Specifications
Package H-37265J-2
45° X .64
[.025]
2X 6.35
[.250]
D
2X 2.59±.51
[.102±.020]
FLANGE
10.16
[.400]
C
L
LID
(15.34
10.16±.25 [.604])
[.400±.010]
FLANGE
4X R0.63
[R.025] MAX
G
C
L
SPH 1.57
[.062]
10.16±.25
[.400±.010]
1.02
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
a
d
v
a
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
n
c
e
s
H-37265J-2_02_po_05-29-2015
p
e
c
S
fi
i
3.61±.38
[.142±.015]
c
a
t
o
i
n
10.16
[.400]
Advance Specification
3 of 4
Rev. 01, 2015-07-27
GTVA221701FA V1
Revision History
Revision
01
Date
2015-07-27
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-07-27
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
a
d
v
a
n
c
e
s
p
e
c
fi
i
c
a
t
o
i
n
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Advance Specification
4 of 4
Rev. 01, 2015-07-27
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