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MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
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•
•
•
•
•
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are Pb−Free Devices*
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE − 50 AND 60 VOLTS
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
MBR150
MBR160
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
MBR150
MBR160
V
RWM
V
R
V
R(RMS)
I
O
35
42
1.0
V
A
A
MBR1x0
YYWW
G
G
Symbol
V
RRM
50
60
Value
Unit
V
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
Average Rectified Forward Current (Note 1)
(V
R(equiv)
v
0.2 V
R
(dc), T
L
= 90°C,
R
qJA
= 80°C/W, P.C. Board Mounting, T
A
= 55°C)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
L
= 70°C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
I
FSM
25
(for one
cycle)
− 65 to
+150
A
T
J
, T
stg
°C
A
= Assembly Location
MBR1x0 = Device Code
x = 5 or 6
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
(Notes 1 and 2)
Characteristic
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJA
Max
80
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2006 − Rev. 8
Publication Order Number:
MBR150/D
MBR150, MBR160
ELECTRICAL CHARACTERISTICS
(T
L
= 25°C unless otherwise noted) (Note 1)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 0.1 A)
(i
F
= 1.0 A)
(i
F
= 3.0 A)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(T
L
= 25°C)
(T
L
= 100°C)
Symbol
v
F
0.550
0.750
1.000
i
R
0.5
5.0
mA
Max
Unit
V
10
7.0
5.0
3.0
2.0
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
T
J
= 150°C
100°C
25°C
10
5.0
I R , REVERSE CURRENT (mA)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
60
70
25°C
T
J
= 150°C
125°C
100°C
75°C
1.0
0.7
0.5
0.3
0.2
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the volt-
age grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if V
R
is sufficiently below rated V
R
.
5.0
PF(AV) , AVERAGE FORWARD
POWER DISSIPATION (WATTS)
0.1
0.07
0.05
0.03
0.02
SQUARE
WAVE
4.0
3.0
p
5
10
1.0
I
PK
/I
AV
= 20
dc
2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.0
2.0
3.0
4.0
5.0
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage
Figure 3. Forward Power Dissipation
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2
MBR150, MBR160
THERMAL CHARACTERISTICS
1.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.7
0.5
0.3
0.2
P
pk
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
50
t
p
TIME
t
1
P
pk
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
, is peak
of an equivalent square
power pulse.
Z
qJL(t)
= Z
qJL
•
r(t)
DT
JL
= P
pk
•
R
qJL
[D + (1 − D)
•
r(t
1
+ t
p
) + r(t
p
) − r(t
1
)] where
DT
JL
= the increase in junction temperature above the lead
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
1
+ t
p
) = normalized value of
transient thermal resistance at time, t
1
+ t
p
.
100
200
500
1k
2k
5k
10 k
Figure 4. Thermal Response
.
90
80
R
q
JL , THERMAL RESISTANCE,
JUNCTION−TO−LEAD (
°
C/W)
70
60
MAXIMUM
50
TYPICAL
40
30
20
10
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
L, LEAD LENGTH (INCHES)
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
C, CAPACITANCE (pF)
100
80
70
60
50
40
30
20
0
10
20
30
40
50
60
70
80
90
100
V
R
, REVERSE VOLTAGE (VOLTS)
200
T
J
= 25°C
f = 1 MHz
Figure 5. Steady−State Thermal Resistance
NOTE 1. — MOUNTING DATA:
Figure 6. Typical Capacitance
NOTE 2. — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
R
qS(A)
T
A(A)
T
L(A)
T
C(A)
T
J
R
qL(A)
R
qJ(A)
R
q
J(K
)
Data shown for thermal resistance junction−to−ambient
(R
qJA)
for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Typical Values for R
qJA
in Still Air
Mounting
Method
1
2
3
Lead Length, L (in)
1/8
52
67
—
1/4
65
80
1/2
72
87
50
3/4
85
100
R
qJA
°C/W
°C/W
°C/W
R
qL(K)
R
qS(K)
T
A(K)
P
D
T
C(K)
T
L(K)
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3
MBR150, MBR160
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heatsink.
Terms in the model signify:
T
A
= Ambient Temperature T
C
= Case Temperature
T
L
= Lead Temperature
T
J
= Junction Temperature
R
qS
= Thermal Resistance, Heatsink−to−Ambient
R
qL
= Thermal Resistance, Lead−to−Heatsink
R
qJ
= Thermal Resistance, Junction−to−Case
P
D
= Power Dissipation
Mounting Method 1
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Mounting Method 3
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
R
qL
= 100°C/W/in typically and 120°C/W/in maximum.
R
qJ
= 36°C/W typically and 46°C/W maximum.
NOTE 3. — HIGH FREQUENCY OPERATION:
L
L
L = 3/8″
Mounting Method 2
BOARD GROUND
PLANE
L
L
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 6)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
ÉÉÉÉÉÉÉÉ
É
É
É
ÉÉÉÉÉÉÉÉ
É
É
VECTOR PIN MOUNTING
ORDERING INFORMATION
Device
MBR150
MBR150G
MBR150RL
MBR150RLG
MBR160
MBR160G
MBR160RL
MBR160RLG
Package
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Shipping
†
1000 Units / Bag
1000 Units / Bag
5000 / Tape & Reel
5000 / Tape & Reel
1000 Units / Bag
1000 Units / Bag
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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4
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