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MBR160

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
产品类别分立半导体    二极管   
文件大小32KB,共5页
制造商International Rectifier ( Infineon )
官网地址http://www.irf.com/
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MBR160概述

Rectifier Diode, Schottky, 1 Element, 1A, 60V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

MBR160规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称International Rectifier ( Infineon )
零件包装代码DO-41
包装说明O-PALF-W2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY, FREE WHEELING DIODE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JEDEC-95代码DO-204AL
JESD-30 代码O-PALF-W2
JESD-609代码e0
最大非重复峰值正向电流150 A
元件数量1
端子数量2
最高工作温度150 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压60 V
表面贴装NO
技术SCHOTTKY
端子面层Tin/Lead (Sn/Pb)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED

MBR160文档预览

Bulletin PD-20589 rev. B 03/03
MBR150
MBR160
SCHOTTKY RECTIFIER
1.0 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 1 Apk, T
J
= 125°C
range
50/60
150
0.65
- 40 to 150
V
A
V
°C
Description/ Features
Units
A
The MBR150, MBR160 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, free-wheeling diodes, and
reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
MBR150
MBR160
1.0
CASE STYLE AND DIMENSIONS
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
www.irf.com
1
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBR150
50
MBR160
60
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
150
25
2.0
1.0
A
mJ
A
5µs Sine or 3µs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
Value
1.0
Units
A
Conditions
50% duty cycle @ T
C
= 75°C, rectangular wave form
T
J
= 25 °C, I
AS
= 1 Amps, L = 4 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
Value
0.75
0.9
1.0
0.65
0.75
0.82
Units Conditions
V
V
V
V
V
V
mA
mA
mA
pF
nH
V/µs
@ 1A
@ 2A
@ 3A
@ 1A
@ 2A
@ 3A
T
J
= 25 °C
T
J
= 100°C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
V
R
= rated V
R
T
J
= 25 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current
* See Fig. 2
(1)
0.5
5
10
55
8.0
10000
C
T
L
S
Typical Junction Capacitance
Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
Value
- 40 to 150
80
Units Conditions
°C
°C
°C/W DC operation (*See Fig. 4)
Max. Junction Temperature Range(*) - 40 to 150
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
wt
Approximate Weight
Case Style
(*) dPtot
dTj
<
1
Rth( j-a)
0.33(0.012) g (oz.)
DO-204AL(DO-41)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from package
2
www.irf.com
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
100
Reverse Current - I
R
(mA)
10
10
1
0.1
0.01
0.001
0.0001
0
10
20
T
J
= 150˚C
125˚C
25˚C
Instantaneous Forward Current - I
F
(A)
30
40
50
60
70
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
1
100
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Junction Capacitance - C
T
(pF)
T
J
= 25˚C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
0
10
20
30
40
50
60
70
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
160
Allowable Lead Temperature (°C)
Average Power Loss (Watts)
1
0.8
0.6
RMS Limit
140
120
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Square wave (D = 0.50)
80% Rated Vr applied
DC
0.4
0.2
0
0
0.2 0.4 0.6 0.8
1
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
see note (2)
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 4 - Maximum Ambient Temperature Vs. Average Forward
Current, Printed Circuit Board Mounted
1000
Non-Repetitive Surge Current - I
FSM
(A)
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Non-Repetitive Surge Current
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
www.irf.com
MBR150, MBR160
Bulletin PD-20589 rev. B 03/03
Ordering Information Table
Device Code
MBR
1
1
2
60
3
TR
4
1
2
3
4
-
-
-
-
Schottky MBR Series
Current Rating: 1 = 1A
Voltage Rating
TR = Tape & Reel package (5000 pcs)
-
= Box package (1000 pcs)
60 = 60V
50 = 50V
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03/03
www.irf.com
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