PPJT7413
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@-4.5V, ID@-2.5A<85mΩ
RDS(ON) , VGS@-2.5V, ID@-1.8A<115mΩ
RDS(ON) , VGS@-1.8V, ID@-1.3A<150mΩ
RDS(ON) , VGS@-1.5V, ID@-0.5A<250mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
-20 V
Current
-2.5A
SOT-363-1
Unit: inch(mm)
(Halogen Free)
Mechanical Data
Case: SOT-363-1 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00028 ounces, 0.00794 grams
Marking: T13
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
o
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
mW
mW/
o
C
o
-20
+12
-2.5
-10
750
6
-55~150
167
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
January 27,2015-REV.01
Page 1
PPJT7413
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-4.5V, I
D
=-2.5A
Drain-Source On-State Resistance
R
DS(on)
V
GS
=-2.5V, I
D
=-1.8A
V
GS
=-1.8V, I
D
=-1.3A
V
GS
=-1.5V, I
D
=-0.5A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1.0A, V
GS
=0V
-
-
-
-0.77
-1.0
-1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=-10V, I
D
=-2.2A,
V
GS
=-4.5V
(Note 1,2)
V
DS
=-10V, V
GS
=0V,
f=1.0MHZ
V
DD
=-10V, I
D
=-2.2A,
V
GS
=-4.5V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
7
1
1.8
522
55
40
10
4
34
5
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
I
DSS
I
GSS
V
DS
=-20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
-20
-0.4
-
-
-
-
-
-
-
-0.65
76
92
116
160
-0.01
+10
-
-1.2
85
115
150
250
-1
+100
uA
nA
mΩ
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4. The maximum current rating is package limited.
5. Guaranteed by design, not subject to production testing
January 27,2015-REV.01
Page 2
PPJT7413
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
January 27,2015-REV.01
Page 3
PPJT7413
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature.
Fig.9 Capacitance vs. Drain-Source Voltage.
January 27,2015-REV.01
Page 4
PPJT7413
PART NO PACKING CODE VERSION
Part No Packing Code
PJT7413_S1_00001
Package Type
SOT-363-1
Packing type
3K pcs / 7” reel
Marking
T13
Version
Halogen free
MOUNTING PAD LAYOUT
January 27,2015-REV.01
Page 5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
