HN7G01FE
TOSHIBA Multichip Discrete Device
HN7G01FE
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
•
•
Q1 (transistor): 2SA1955 equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Unit: mm
Q1
(Transistor)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Rating
−15
−12
−5
−400
−50
Unit
V
V
V
mA
mA
1.
2.
3.
4.
5.
6.
EMITTER
BASE
DRAIN
SOURCE
GATE
COLLECTOR
Q2
(MOSFET)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
V
DS
V
GSS
I
D
Rating
20
10
50
Unit
V
V
mA
JEDEC
JEITA
TOSHIBA
―
―
2-2N1F
Weight: 0.003 g (typ.)
Q1, Q2 Common Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P (Note 1)
T
j
T
stg
Rating
100
125
−55~125
Unit
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Type Name
h
FE
Rank
Pin Assignment
(top view)
6
5
4
7A
Q1
Q2
1
2
3
1
2007-11-01
HN7G01FE
Q1
(Transistor)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
I
CBO
I
EBO
Test Condition
V
CB
= −15
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
Min
⎯
⎯
300
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
−15
−110
−0.87
Max
−0.1
−0.1
1000
−30
−250
−1.2
mV
V
Unit
μA
μA
h
FE
(Note 2) V
CE
= −2
V, I
C
= −10
mA
V
CE (sat) (1)
V
CE (sat) (2)
V
BE (sat)
I
C
= −10
mA, I
B
= −0.5
mA
I
C
= −200
mA, I
B
= −10
mA
I
C
= −200
mA, I
B
= −10
mA
Note 2: h
FE
classification A: 300~600, B: 500~1000
Q2
(MOSFET)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
th
⎪Y
fs
⎪
R
DS (ON)
C
iss
C
rss
C
oss
t
on
t
off
Test Condition
V
GS
=
10 V, V
DS
=
0
I
D
=
100
μA,
V
GS
=
0
V
DS
=
20 V, V
GS
=
0
V
DS
=
3 V, I
D
=
0.1 mA
V
DS
=
3 V, I
D
=
10 mA
I
D
=
10 mA, V
GS
=
2.5 V
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DS
=
3 V, V
GS
=
0, f
=
1 MHz
V
DD
=
3 V, I
D
=
10 mA, V
GS
=
0~2.5 V
V
DD
=
3 V, I
D
=
10 mA, V
GS
=
0~2.5 V
Min
⎯
20
⎯
0.7
25
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
50
4
11.0
3.3
9.3
0.16
0.19
Max
1
⎯
1
1.3
⎯
12
⎯
⎯
⎯
⎯
⎯
Unit
μA
V
μA
V
mS
Ω
pF
pF
pF
μs
Switching Time Test Circuit
(a) Switching time test circuit
2.5 V
IN
50
Ω
0
10
μS
V
IN
R
L
I
D
OUT
V
DD
=
3 V
D.U.
<
1%
=
V
IN
: t
r
, t
f
<
5 ns
(Z
out
=
50
Ω)
Common source
Ta
=
25°C
2.5 V
(b) V
IN
V
GS
0
V
DD
(c) V
OUT
V
DS
V
DS (ON)
t
on
90%
t
r
t
off
t
f
90%
10%
10%
V
DD
2
2007-11-01
HN7G01FE
Q1 (Transistor)
3
2007-11-01
HN7G01FE
Q2 (S-MOS)
4
2007-11-01
HN7G01FE
Q2 (S-MOS)
5
2007-11-01
嵌入式系统
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