EClamp8052P
EMIClamp®
2-Line Common Mode Filter
and Low Capacitance ESD Protection
Features
• Transient Protection to
IEC 61000-4-2 (ESD) 30kV (Air), 25kV (Contact)
IEC 61000-4-4 (EFT) 4kV (5/50ns)
IEC 61000-4-5 (Lightning) 6A (8/20µs)
ISO-10605 (ESD) 30kV (Air), 25kV (Contact)
• Qualified to AEC-Q100, Grade 1
• Package design optimized for high speed lines
• ESD protection and common mode filtering for two
high-speed lines
• High differential bandwidth cutoff frequency
• Low ESD Clamping Voltage
• Dynamic Resistance: 0.50 Ohms (Typ)
• Solid-State Silicon-Avalanche Technology
PROTECTION PRODUCTS
Description
EClamp®8052P integrates common mode filtering
with low capacitance ESD protection and is designed
specifically for MIPI, MHL, and USB interfaces. Each
device provides filtering and ESD protection for one
high-speed differential pair.
EClamp8052P is an easily implemented solution for
replacing discrete common mode chokes and ESD
protection devices in a single package. These devices
utilize silicon avalanche technology for superior ESD
and TLP clamping performance. They feature high
maximum ESD withstand voltage of +/- 25kV contact,
+/-30kV air discharge per IEC 61000-4-2. The integrated
common-mode choke has a typical differential mode
cutoff frequency >3GHZ and typical common mode
suppression of 10dB at 500MHz and 15dB from 1GHz
to 2.8GHz. Each channel series resistance is 1.8 Ohms
maximum.
EClamp8052P is in a 7-pin SGP1917N5 package,
measuring 1.9 x 1.7mm with a nominal height of
0.55mm. The leads have a nominal pin-to-pin pitch of
0.50mm. Flow- through package design simplifies PCB
layout and maintains signal integrity on high-speed lines.
Mechanical Characteristics
•
•
•
•
•
•
SGP1917N5 package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.9 x 1.70 x 0.55 mm
Molding Compound Flammability Rating: UL 94V-0
Marking : Marking Code + Date Code
Packaging : Tape and Reel
Applications
•
•
•
•
•
•
Automotive Applications
Industrial Equipment
USB 2.0 / USB 3.0
HDMI / MHL
MIPI Camera Serial Interface (CSI)
MIPI Display Serial Interface (DSI)
Circuit Diagram
Pin Configuration
External Side
Towards Connector
I/O+ In
I/O- In
I/O+ Out
I/O- Out
I/O+ In
I/O- In
1
I/O+ Out
I/O- Out
GND
GND
EClamp8052P
Final Datasheet
May 7, 2015
Rev 4.0
www.semtech.com
Internal Side Towards IC
Page 1
Semtech
Absolute Maximum Ratings
Rating
Peak Pulse Current (tp = 8/20µs)
ESD per IEC 61000-4-2 (Contact)
(1)
ESD per IEC 61000-4-2 (Air)
(1)
ESD per ISO-10605 (Contact)
(2)
ESD per ISO-10605 (Air)
(2)
Operating Temperature
Storage Temperature
Symbol
I
PP
V
ESD
V
ESD
T
J
T
STG
Value
6
±25
±30
±25
±30
-40 to +125
-55 to +150
Units
A
kV
kV
O
C
C
O
Electrical Characteristics (T=25
O
C unless otherwise specified)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
ESD Clamping Voltage
(3)
ESD Clamping Voltage
(3)
Dynamic Resistance
(3), (4)
Total Channel Capacitance
Differential (SDD21) Cut-Off
Frequency
Common Mode (SCC21)
Attenuation
Channel Resistance
Symbol Conditions
V
RWM
V
BR
I
R
V
C
V
C
V
C
V
C
R
DYN
C
IN
f
3dB
-40
O
C to 125
O
C
Pin 1 or Pin 2 to Pin 3
I
t
= 1mA,
Pin 1 or 2 to Pin 3
V
RWM
= 5V
-40
O
C to 125
O
C
T = 25
O
C
I
PP
= 1A, tp = 8/20µs,
Pin 1 or 2 to Pin 3
I
PP
= 6A, tp = 8/20µs,
Pin 1 or 2 to Pin 3
I
PP
= 4A, tp = 0.2/100ns (TLP)
Pin 1 or 2 to Pin 3
I
PP
= 16A, tp = 0.2/100ns (TLP)
Pin 1 or 2 to Pin 3
tp = 0.2/100ns (TLP)
Pin 1 or 2 to Pin 3
V
R
= 0V, f = 1MHz
Pin 1 or 2 to Pin 3
T = 25
O
C
Min.
Typ.
Max.
5
Units
V
V
μA
V
V
V
V
Ohms
6.5
9
0.005
11
0.100
12
17
11
17
0.50
0.95
3
3
10
20
1.3
1.8
1.2
pF
GHz
dB
dB
dB
Ohms
50 Ohm Source and Load Termination
f = 75MHz
f
ATT
R
CH
f = 500MHz
f = 1GHZ - 2.5GHz
Input to Output
Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
(2): ESD Gun return path to Horizontal Coupling Plane (HCP); Test conditions: a)150pF/330pF, 330W b) 150pF/330pF, 2kW
(3): Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I
TLP
and V
TLP
averaging window: t
1
= 70ns to t
2
= 90ns.
(4): Dynamic resistance calculated from I
TLP
= 4A to I
TLP
= 16A
EClamp8052P
Final Datasheet
May 7, 2015
Rev 4.0
www.semtech.com
Page 2
Semtech
Typical Characteristics
Differential Mode Attenuation vs. Frequency
0
-1
-2
Insertion Loss (dB)
Insertion Loss (dB)
-3
-4
-5
-6
-7
-8
-9
-10
0.01
0.1
Frequency (GHz)
1
10
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
0.01
0.1
Frequency (GHz)
1
Common Mode Attenuation vs. Frequency
Junction Capacitance vs. Reverse Voltage
0.99
0.98
0.97
Capacitance ‐ C
J
(pF)
Capacitance ‐ C
J
(pF)
0.96
0.95
0.94
0.93
0.92
0
1
2
3
4
Reverse Voltage ‐ V
R
(V)
5
f = 1Mhz
Any Pin to GND
T
A
= 25
O
C
Junction Capacitance vs. Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VR = 0V
VR = 5V
EC8052P_AR_CJvT
f = 1Mhz
Any Pin to GND
Normalized to 25
O
C
EC8052P_AR_CJvV
6
0.0
‐50
‐25
0
25
50
75
Temperature (°C)
100
125
150
Channel DC Resistance vs. Temperature
2.0
Pin1 to 5 or 2 to 4
Breakdown Voltage (VBR) vs. Temperature
8.70
Any Pin to GND
I
BR
= 1mA
8.65
Channel DC Resistance ‐ R
CH
(Ω)
Breakdown Voltage ‐ V
BR
(V)
1.5
8.60
1.0
8.55
0.5
8.50
EC8052P_AR_VBR
EC8052P_AR_RCH
0.0
‐50
0
50
Temperature (
O
C)
100
150
8.45
‐50
‐25
0
25
50
75
Temperature (
O
C)
100
125
150
EClamp8052P
Final Datasheet
May 7, 2015
Rev 4.0
www.semtech.com
Page 3
Semtech
Typical Characteristics
ESD Clamping (+8kV Contact per IEC 61000-4-2)
150
130
Clamping Voltage ‐ V
C
(V)
110
90
70
50
30
10
‐10
‐10
0
10
20
30
40
Time (ns)
50
60
EC8052P_AR_ESDP8
ESD Clamping (-8kV Contact per IEC 61000-4-2)
0
‐20
Clamping Voltage ‐ V
C
(V)
‐40
‐60
‐80
Measured with 50 Ohm scope input
impedance, 2GHz bandwidth. Corrected
for 50 Ohm, 20dB attenuator. ESD gun
return path connected to ESD ground
plane. Pin1 or 2 to GND,T
A
= 25
O
C
‐100
‐120
‐140
‐160
Measured with 50 Ohm scope input
impedance, 2GHz bandwidth. Corrected
for 50 Ohm, 20dB attenuator. ESD gun
return path connected to ESD ground
plane. Pin1 or 2 to GND,T
A
= 25
O
C
EC8052P_AR_ESDN8
70
80
‐10
0
10
20
30
40
Time (ns)
50
60
70
80
TLP Characteristic (Positive)
30
T
A
= 25
O
C
T
P
= 100ns
T
R
= 0.2ns
0.7T
P
< T
SAMPLE
< 0.9T
P
TLP Characteristic (Negative)
0
T
A
= 25
O
C
T
P
= 100ns
T
R
= 0.2ns
0.7T
P
< T
SAMPLE
< 0.9T
P
25
‐5
20
I
DUT
(A)
I
DUT
(A)
‐10
15
‐15
10
‐20
5
EC8052P_AR_TLPP
‐25
EC8052P_AR_TLPN
0
0
5
10
15
V
DUT
(V)
20
25
‐30
30
‐25
‐20
‐15
V
DUT
(V)
‐10
‐5
0
Clamping Voltage vs. Peak Pulse Current (tp=8/20us)
20
18
16
14
Clamping Voltage ‐V
C
(V)
12
10
8
6
4
2
EC8052P_AR_8_20
Reverse Leakage vs. Temperature
10
T
A
= 25
O
C
tr = 8µs
td = 20µs
Surge applied and measured on same pin
I/O IN (Input Side)
8
Leakage Current ‐ I
L
(nA)
V
R
= 5V
Any Pin to GND
6
4
2
EC8052P_AR_IR
0
0
1
2
3
4
Peak Pulse Current ‐ I
PP
(A)
5
6
7
0
25
40
55
70
85
100
Temperature (
O
C)
115
130
145
EClamp8052P
Final Datasheet
May 7, 2015
Rev 4.0
www.semtech.com
Page 4
Semtech
Application Information
USB Interface Protection
EClamp8052P may be used to protect D+ and D- lines
against ESD and EMI in USB 2.0, USB 3.0, and USB 3.1
applications. USB D+ and D- lines enter at pins 1 and 2
(connector side) and exit at pins 4 and 5. The TVS diodes
are internally connected at pins 1 and 2 and therfore
must be located towards the connector on the PCB. Pin 3
is connected to the ground plane. Figures 1 is an exam-
ple of protecting a USB 3.0 Type-A interface (host side
shown).
For USB 3.0 applications, RClamp3324T is recommended
for protecting the 5Gb/s SuperSpeed line pairs. Lines
are routed through the device at pins 1-4. Traces should
be kept the same length to avoid impedance mismatch.
Ground is connected at pins 5 and 6. The differential
impedance of each pair can be controlled for USB 3.0 (85
Ohms +/-15%) while maintaining a minimum trace-to-
trace and trace-to-pad spacing. Individual PCB design
constraints may necessitate different spacing or trace
width. Both ground pads should be connected for op-
timal performance. Ground connection is made using
filled via-in-pad. Additional information may be found on
the device data sheet.
Single line devices such as uClamp0571P are recom-
mended for surge and ESD protection of the VBus line.
This device features high surge and ESD capability and
may be used on 5V power rails.
Device Placement
Placement of the protection component is a critical ele-
ment for effective ESD suppression. TVS diodes should
be placed as close to the connector as possible. This
helps reduce transient coupling to nearby traces.
Ground connections should be made directly to the
ground plane using micro-vias. This reduces parasitic
inductance in the ground path and minimizes the clamp-
ing voltage seen by the protected device.
EClamp8052P
1
5
R
GND
2
4
3
R
D+
SSRX+
GND
RClamp3324T
D-
SSTX-
VBus
SSTX+
uClamp0571P
USB 3.0 - Type A
Host Connector
Figure 1 - USB 3.0 Type-A Protection Example
EClamp8052P
Final Datasheet
May 7, 2015
Rev 4.0
www.semtech.com
USB 3.0 Transceiver
SSRX-
Page 5
Semtech
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