UNISONIC TECHNOLOGIES CO., LTD
13003ADG
Preliminary
NPN SILICON TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V applications in switch
mode.
FEATURES
* Reverse biased SOA with inductive load @ T
C
=100°C
* Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C
Typical t
C
= 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching regulator’s, inverters
* Motor controls
* Solenoid/relay drivers
* Deflection circuits
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
13003ADGL-TM3-T
13003ADGL-T60-F-K
13003ADGL-T92-F-B
13003ADGL-T92-F-K
Note: Pin Assignment: B: Base
13003ADGL-T60-F-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Free
(1) T: Tube, B: Bluk, K: Bulk
(2) refer to Pin Assignment
(3) TM3: TO-251, T60: TO-126, T92: TO-92
(4) L: Lead Free, P: Halogen Free
Halogen Free
13003ADGP-TM3-T
13003ADGP-T60-F-K
13003ADGP-T92-F-B
13003ADGP-T92-F-K
C: Collector
E: Emitter
Package
TO-251
TO-126
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Bulk
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MARKING
PACKAGE
Preliminary
NPN SILICON TRANSISTOR
MARKING
TO-251
TO-126
TO-92
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13003ADG
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter Base Voltage
Preliminary
SYMBOL
V
CEO(SUS)
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
NPN SILICON TRANSISTOR
UNIT
V
V
V
A
A
A
W
W
W
W
W
W
°C
°C
ABSOLUTE MAXIMUM RATINGS
RATINGS
400
700
9
Continuous
1.5
Collector Current
Peak (1)
3
Continuous
0.75
Base Current
Peak (1)
1.5
Continuous
2.25
Emitter Current
Peak (1)
4.5
1.4
TO-126
T
A
=25°C
TO-92
1.1
TO-251
1.56
Power Dissipation
P
D
TO-126
20
T
C
=25°C
TO-92
1.5
TO-251
25
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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PARAMETER
OFF CHARACTERISTICS
(Note)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Preliminary
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified.)
SYMBOL
V
CEO(SUS)
T
C
=25°C
T
C
=100°C
I
CEO
I
EBO
Is/b
RB
SOA
h
FE1
h
FE2
V
CE(SAT)
I
C
=0.5A, V
CE
=5V
I
C
=1A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
C
=100°C
I
C
=100mA, V
CE
=10V, f=1MHz
V
CB
=10V, I
E
=0, f=0.1MHz
TEST CONDITIONS
I
C
=10mA , I
B
=0
V
CEO
=Rated Value,
V
BE(OFF)
=1.5 V
V
EB
=9V, I
C
=0
MIN TYP MAX UNIT
400
1
5
1
See Fig.5
See Fig.6
14
5
57
30
0.5
1
3
1
1
1.2
1.1
10
21
V
mA
mA
Emitter Cutoff Current
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS
(Note)
DC Current Gain
Collector-Emitter Saturation Voltage
V
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
Fall Time
Diode Forward Voltage
Note: Pulse Test: PW=300μs, Duty Cycle≤2%
V
BE(SAT)
V
f
T
C
OB
4
MHz
pF
t
D
t
R
t
S
t
F
t
STG
t
C
t
F
V
F
V
CC
=125V, I
C
=1A,
B1
=I
B2
=0.2A,
t
P
=25μs, Duty Cycle≤1%
0.05
0.5
2
0.4
0.1
1
4
0.7
μs
μs
μs
μs
μs
μs
μs
V
I
C
=1A, V
CLAMP
=300V, I
B1
=0.2A,
V
BE(OFF)
=5V
DC
, T
C
=100°C
I
F
=0.5A
1.7
4
0.29 0.75
0.15
1.5
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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