UNISONIC TECHNOLOGIES CO., LTD
13002AG
Preliminary
NPN SILICON TRANSISTOR
HIGH VOLTAGE FAST
SWITCHING NPN POWER
APPLICATIONS
DESCRIPTION
The device is manufactured using High Voltage Multi Epitaxial
Planar technology for high switching speeds and high voltage
capability.
The UTC
13002AG
is designed for use in Compact Fluorescent
Lamps.
1
TO-92
FEATURES
* High Voltage Capability
* Low Spread of Dynamic Parameters
* Very High Switching Speed
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13002AGL-T92-A-B
13002AGP-T92-A-B
13002AGL-T92-A-K
13002AGP-T92-A-K
13002AGL-T92-A-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Lead Free
(1) B: Bluk, K: Bulk
(2) refer to Pin Assignment
(3) T92: TO-92
(4) L: Lead Free, P: Halogen Free
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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13002AG
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Emitter Voltage (V
BE
= 0)
V
CES
700
V
Collector Emitter Voltage (I
B
= 0)
V
CEO
400
V
Emitter Base Voltage (I
C
= 0)
V
EBO
9
V
Collector Current
I
C
0.75
A
Collector Peak Current (t
p
< 5 ms)
I
CM
0.5
A
Base Current
I
B
0.4
A
Base Peak Current (t
p
< 5 ms)
I
BM
0.75
A
Total Dissipation at Ta = 25°C
P
D
0.95
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERAMAL DATA
PARAMETER
Thermal Resistance Junction-ambient
SYMBOL
θ
JA
RATINGS
130
UNIT
°C /W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
PARAMETER
Collector Emitter Sustaining Voltage (I
B
= 0)
(Note)
Collector Emitter Saturation Voltage (Note)
Base Emitter Saturation Voltage (Note)
Emitter Cut off Current (I
C
= 0)
Collector Cut off Current (V
BE
= -1.5V)
DC Current Gain
Inductive Load Fall Time
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
700
0.2
0.3
0.4
0.5
1
1.5
1
1.2
1
250
27
20
V
V
V
mA
μ
A
V
CEO(SUS)
I
C
= 1 mA
V
CE(SAT)
V
BE(SAT)
I
EBO
I
CEV
h
FE*
t
F
I
C
= 0.2 A , I
B
= 40 mA
I
C
= 0.3 A , I
B
= 75 mA
I
C
= 0.4 A , I
B
= 135 mA
I
C
= 0.2 A , I
B
= 40 mA
I
C
= 0.3 A , I
B
= 75 mA
V
EB
= 9 V
V
CE
= 700 V
I
C
= 0.2 A, V
CE
= 5 V
I
C
= 0.4 A, V
CE
= 5 V
I
C
= 0.2 A , V
CLAMP
= 300 V
I
B1
= -I
B2
= 40 mA , L = 3 mH
12
7
0.3
μ
s
Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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13002AG
Preliminary
NPN SILICON TRANSISTOR
INDUCTIVE LOAD SWITCHING TEST CIRCUIT
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
L
C
(3)
I
B1
(1)
I
C
I
B
R
BB(2)
-
V
BB
+
V
CE
V
CLAMP
Vcc
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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