StrongIRFET™
IRF7480MTRPbF
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
DirectFET
®
N-Channel Power MOSFET
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
S
D
G
S
S
S
D
S
S
40V
0.95m
1.20m
217A
DirectFET
®
ISOMETRIC
ME
Base part number
IRF7480MPbF
Package Type
DirectFET
®
ME
Standard Pack
Form
Tape and Reel
Quantity
4800
Orderable Part Number
IRF7480MTRPbF
)
RDS(on), Drain-to -Source On Resistance (m
3.0
ID = 132A
2.5
225
200
175
ID, Drain Current (A)
18
20
150
125
100
75
50
2.0
TJ = 125°C
1.5
1.0
TJ = 25°C
0.5
4
6
8
10
12
14
16
25
0
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
TC , Case Temperature (°C)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximum Ratings
Symbol
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
Operating Junction and
T
J
Storage Temperature Range
T
STG
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Case
R
JC
Junction-to-PCB Mounted
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
I
DSS
I
GSS
R
G
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ.
40
–––
–––
30
––– 0.95
––– 1.60
2.1
3.0
––– –––
––– –––
––– –––
––– –––
––– 0.81
IRF7480MTRPbF
Max.
217
137
868
96
0.77
± 20
-55 to + 150
81
206
See Fig.15,16, 23a, 23b
Typ.
–––
12.5
20
–––
0.75
Max.
45
–––
–––
1.3
–––
Units
mJ
A
mJ
Units
A
W
W/°C
V
°C
°C/W
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
1.20
V
GS
= 10V, I
D
= 132A
m
–––
V
GS
= 6.0V, I
D
= 66A
3.9
V
V
DS
= V
GS
, I
D
= 150µA
1.0
V
DS
= 40V, V
GS
= 0V
µA
150
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
–––
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with
small clip heatsink (still air)
2
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May 14, 2015
IRF7480MTRPbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
370 ––– –––
S V
DS
= 10V, I
D
= 132A
Q
g
Total Gate Charge
––– 123 185
I
D
= 132A
Q
gs
Gate-to-Source Charge
–––
31
–––
V
DS
=20V
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
44
–––
V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
79
–––
I
D
= 132A, V
DS
=0V, V
GS
= 10V
t
d(on)
Turn-On Delay Time
–––
21
–––
V
DD
= 20V
t
r
Rise Time
–––
70
–––
I = 30A
ns
D
t
d(off)
Turn-Off Delay Time
–––
68
–––
R
G
= 2.7
t
f
Fall Time
–––
58
–––
V
GS
= 10V
C
iss
Input Capacitance
––– 6680 –––
V
GS
= 0V
C
oss
Output Capacitance
––– 1035 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
––– 700 –––
pF ƒ = 1.0MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 1240 –––
V
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
––– 1515 –––
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– –––
87
showing the
A
integral reverse
––– –––
868
p-n junction diode.
––– ––– 1.2
V T
J
= 25°C,I
S
=132A, V
GS
= 0V
D
G
S
–––
–––
–––
–––
–––
–––
2.4
44
46
56
63
2.1
–––
–––
–––
–––
–––
–––
V/ns
T
J
=150°C,I
S
=132A,
V
DS
= 40V
T
J
= 25° C V
R
= 34V,
ns
T
J
= 125°C I
F
= 132A
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
J
max, starting T
J
= 25°C, L = 0.009mH, R
G
= 50, I
AS
= 132A, V
GS
=10V.
I
SD
≤
132A, di/dt
≤
920A/µs, V
DD
≤
V(
BR)DSS
, T
J
≤
150°C.
Pulse
width
≤
400µs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer
to application note # AN-994.
http://www.irf.com/technical-info/appnotes/an-994.pdf
R
is measured at T
J
approximately 90°C.
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 20A, V
GS
=10V.
3
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May 14, 2015
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRF7480MTRPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
4.5V
4.5V
10
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 132A
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
TJ = 25°C
10
VDS = 10V
1.0
2
3
4
5
6
60µs
PULSE WIDTH
7
8
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 132A
VDS = 32V
VDS = 20V
C, Capacitance (pF)
10000
Ciss
Coss
Crss
1000
100
1
10
VDS , Drain-to-Source Voltage (V)
100
0
20
40
60
80
100 120 140 160
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 14, 2015
1000
1000
ID, Drain-to-Source Current (A)
IRF7480MTRPbF
ISD, Reverse Drain Current (A)
100
100
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
TJ = 150°C
10
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
1msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
DC
0.01
VDS , Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
48
Id = 1.0mA
47
46
Energy (µJ)
0.8
0.7
0.6
45
44
43
42
41
40
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.5
0.4
0.3
0.2
0.1
0.0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
m
RDS (on), Drain-to -Source On Resistance (
)
Fig 12.
Typical C
oss
Stored Energy
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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May 14, 2015
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