StrongIRFET™
IRF135B203
IRF135S203
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery
powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
135V
6.7m
8.4m
129A
G
S
max
I
D (Silicon Limited)
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
G
Gate
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
S
D
G
TO-220AB
IRF135B203
S
G
D
2
-Pak
IRF135S203
D
Drain
S
Source
Base part number
IRF135B201
IRF135S201
Package Type
TO-220
D
2
-Pak
Orderable Part Number
IRF135B203
IRF135S203
RDS(on), Drain-to -Source On Resistance (m
)
28
26
24
22
20
18
16
14
12
10
8
6
4
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
ID, Drain Current (A)
140
ID = 77A
120
100
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On– Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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June 17, 2015
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
IRF135B203/IRF135S203
Max.
129
91
512
441
2.9
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
595
870
See Fig 15, 15, 23a, 23b
mJ
A
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
Junction-to-Ambient (PCB Mount)
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
135
–––
–––
2.0
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.14
6.7
–––
–––
–––
–––
–––
2.1
–––
8.4
4.0
20
250
100
-100
–––
Typ.
–––
0.50
–––
–––
Max.
0.34
–––
62
40
Units
°C/W
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C
Reference to 25°C, I
D
= 5mA
m V
GS
= 10V, I
D
= 77A
V
V
DS
= V
GS
, I
D
= 250µA
V
DS
=135 V, V
GS
= 0V
µA
V
DS
= 108V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 200µH, R
G
= 50, I
AS
= 77A, V
GS
=10V.
I
SD
77A, di/dt
1700A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1.0mH, R
G
= 50, I
AS
= 41A, V
GS
=10V.
2
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June 17, 2015
IRF135B203/IRF135S203
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
180
43
46
134
18
73
114
81
9700
540
250
520
700
Typ.
–––
–––
–––
4.0
80
93
270
360
6.0
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 77A
270
I
D
= 77A
–––
V
DS
= 68V
nC
–––
V
GS
= 10V
–––
–––
V
DD
= 81V
I
D
= 77A
–––
ns
–––
R
G
= 2.7
V
GS
= 10V
–––
–––
–––
–––
–––
–––
Max. Units
129
A
512
1.3
–––
–––
–––
–––
–––
–––
V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 108V
V
GS
= 0V, VDS = 0V to 108V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
pF
Diode Characteristics
D
G
S
T
J
= 25°C,I
S
= 77A,V
GS
= 0V
V/ns T
J
= 175°C,I
S
=77A,V
DS
= 135V
T
J
= 25°C
V
DD
= 115V
ns
T
J
= 125°C
I
F
= 77A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A
T
J
= 25°C
3
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© 2015 International Rectifier
Submit Datasheet Feedback
June 17, 2015
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
IRF135B203/IRF135S203
1000
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.0V
10
4.0V
10
60µs
PULSE WIDTH
1
0.1
1
Tj = 25°C
10
100
1
0.1
1
60µs
PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
ID = 77A
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1
VDS = 50V
60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
ID = 77A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
VDS= 108V
VDS= 68V
VDS= 27V
Coss
1000
Crss
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
40
80
120
160
200
240
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2015 International Rectifier
Fig 8.
Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
June 17, 2015
1000
1000
IRF135B203/IRF135S203
T J = 175°C
100µsec
1msec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
OPERATION IN
THIS AREA
LIMITED BY RDS(on)
T J = 25°C
10
10
1
10msec
DC
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
0.01
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
4.0
170
Id = 5.0mA
3.5
3.0
Energy (µJ)
160
2.5
2.0
1.5
1.0
0.5
150
140
130
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.0
0
20
40
60
80
100
120
140
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
20
18
16
14
12
10
8
6
4
0
40
80
120
160
200
ID, Drain Current (A)
VGS = 4.5V
VGS = 5.5V
VGS = 6.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On–Resistance vs. Drain Current
5
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© 2015 International Rectifier
Submit Datasheet Feedback
June 17, 2015
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