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NCP4300AD

产品描述DUAL OP-AMP, 3000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO8, SOIC-8
产品类别模拟混合信号IC    放大器电路   
文件大小745KB,共9页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
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NCP4300AD概述

DUAL OP-AMP, 3000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO8, SOIC-8

NCP4300AD规格参数

参数名称属性值
是否无铅不含铅
厂商名称Rochester Electronics
零件包装代码SOIC
包装说明SOIC-8
针数8
Reach Compliance Codeunknown
放大器类型OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)0.15 µA
标称共模抑制比60 dB
最大输入失调电压3000 µV
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.9 mm
湿度敏感等级NOT SPECIFIED
功能数量2
端子数量8
最高工作温度105 °C
最低工作温度
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态COMMERCIAL
座面最大高度1.75 mm
标称压摆率0.5 V/us
供电电压上限36 V
标称供电电压 (Vsup)5 V
表面贴装YES
温度等级OTHER
端子面层TIN LEAD
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
标称均一增益带宽700 kHz
宽度3.9 mm

NCP4300AD文档预览

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NCP4300A
Dual Operational Amplifier
and Voltage Reference
The NCP4300A is a monolithic integrated circuit specifically
designed to control the output current and voltage levels of switch
mode battery chargers and power supplies. This device contains a
precision 2.6 V shunt reference and two operational amplifiers.
Op−Amp 1 is designed to perform voltage control and has its
non−inverting input internally connected to the reference. Op−Amp 2
is designed for current control and has both inputs uncommitted. The
NCP4300A offers the power converter designer a control solution that
features increased precision with a corresponding reduction in system
complexity and cost. This device is available in an 8−lead surface
mount package.
Features
http://onsemi.com
MARKING
DIAGRAM
8
8
1
SOIC−8
D SUFFIX
CASE 751
1
N4300
ALYWA
G
Pb−Free Packages are Available
Operational Amplifier
Low Input Offset Voltage: 0.5 mV
Input Common Mode Voltage Range Includes Ground
Low Supply Current: 210
mA/Op−Amp
(@V
CC
= 5.0 V)
Medium Unity Gain Bandwidth: 0.7 MHz
Large Output Voltage Swing: 0 V to V
CC
− 1.5 V
Wide Power Supply Voltage Range: 3.0 V to 35 V
A
L
Y
W
A
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Option Code
PIN CONNECTIONS
Out 1 1
In 1− 2
In 1+ 3
GND 4
(Top View)
8
7
6
5
V
CC
Out 2
In 2−
In 2+
Voltage Reference
Fixed Output Voltage Reference: 2.60 V
High Precision Over Temperature: 1.0%
Wide Sink Current Range: 80
mA
to 80 mA
Typical Applications
Battery Charger
Switch Mode Power Supply
ORDERING INFORMATION
Device
Package
SOIC−8
SOIC−8
(Pb−Free)
SOIC−8
SOIC−8
(Pb−Free)
Shipping
98 Units / Rail
98 Units / Rail
2500/Tape & Reel
2500/Tape & Reel
Output 1
1
+
2
3
2.6 V
4
8
7
+
6
V
CC
Output 2
NCP4300AD
NCP4300ADG
NCP4300ADR2
NCP4300ADR2G
Inputs 1
Inputs 2
5
GND
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Figure 1. Functional Block Diagram
©
Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 3
Publication Order Number:
NCP4300A/D
NCP4300A
ABSOLUTE MAXIMUM RATINGS
Rating
Supply Voltage (V
CC
to GND)
ESD Protection Voltage at any Pin (Human Body Model)
Op−Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6)
Op−Amp 2 Input Differential Voltage Range (Pins 5, 6)
Voltage Reference Cathode Current (Pin 3)
Maximum Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Symbol
V
CC
V
ESD
V
IR
V
IDR
I
K
T
J
T
A
T
stg
Value
36
2.0 K (min)
−0.6 to V
CC
+0.6
V
CC
to GND
100
150
0 to 105
−55 to 150
Unit
V
V
V
V
mA
°C
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Value
155
45
Unit
°C/W
°C/W
TYPICAL ELECTRICAL CHARACTERISTICS
Characteristic
Total Supply Current, excluding Current in the Voltage Reference
V
CC
= 5.0 V, no load; 0°C
v
T
A
v
105°C
Op−Amp 1 (Op−amp with non−inverting input connected to the internal Vref)
(V
CC
= 5.0 V, V
out
= 1.4 V, T
A
= 25°C, unless otherwise noted)
Input Offset Voltage
T
A
= 25°C
T
A
= 0°C to 105°C
Input Offset Voltage Temperature Coefficient
T
A
= 0°C to 105°C
Input Bias Current (Inverting input only)
T
A
= 25°C
T
A
= 0°C to 105°C
Large Signal Voltage Gain (V
CC
= 15 V, R
L
= 2.0 kW, V
out
= 1.4 V to 11.4 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Power Supply Rejection (V
CC
= 5.0 V to 30 V)
Output Source Current (V
CC
= 15 V, V
out
= 2.0 V, V
ID
= +1.0 V)
Output Sink Current (V
CC
= 15 V, V
out
= 2.0 V, V
ID
= −1.0 V)
Output Voltage Swing, High (V
CC
= 30 V, R
L
= 10 kW, V
ID
= +1.0 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Output Voltage Swing, Low (R
L
= 10 kW, V
ID
= −1.0 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Slew Rate (V
in
= 0.5 to 2.0 V, V
CC
= 15 V, R
L
= 2.0 kW, A
v
= 1.0, C
L
= 100 pF)
Unity Gain Bandwidth (V
CC
= 30 V, R
L
= 2.0 kW, C
L
= 100 pF, V
in
= 0.5 Vpp @
f = 70 kHz)
Total Harmonic Distortion (f = 1.0 kHz, A
V
= 10, R
L
= 2.0 kW, V
CC
= 30 V,
V
out
= 2.0 V
PP
)
V
IO
DV
IO
/DT
I
IB
A
VOL
50
25
PSRR
I
O+
I
O−
V
OH
27
27
V
OL
SR
BW
THD
0.3
0.3
17
0.5
0.7
0.02
100
100
V/ms
MHz
%
28
mV
40
10
10
100
90
16
25
dB
mA
mA
V
−50
−150
−150
V/mV
0.5
7.0
2.0
3.0
mV/°C
nA
mV
Symbol
I
CC
Min
Typ
0.42
Max
0.8
Unit
mA
http://onsemi.com
2
NCP4300A
TYPICAL ELECTRICAL CHARACTERISTICS
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Op−Amp 2 (Independent op−amp)
(V
CC
= 5.0 V, V
out
= 1.4 V, T
A
= 25°C, unless otherwise noted)
Input Offset Voltage
T
A
= 25°C
T
A
= 0°C to 105°C
Input Offset Voltage Temperature Coefficient
T
A
= 0°C to 105°C
Input Offset Current
T
A
= 25°C
T
A
= 0°C to 105°C
Input Bias Current
T
A
= 25°C
T
A
= 0°C to 105°C
Input Common Mode Voltage Range (V
CC
= 0 V to 35 V)
Large Signal Voltage Gain (V
CC
= 15 V, R
L
= 2.0 kW, V
out
= 1.4 V to 11.4 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Power Supply Rejection (V
CC
= 5.0 V to 30 V)
Common Mode Rejection (V
CM
= 0 V to 3.5 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Output Source Current (V
CC
= 15 V, V
out
= 2.0 V, V
ID
= +1.0 V)
Output Sink Current (V
CC
= 15 V, V
out
= 2.0 V, V
ID
= −1.0 V)
Output Voltage Swing, High (V
CC
= 30 V, R
L
= 10 kW, V
ID
= +1.0 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Output Voltage Swing, Low (R
L
= 10 kW, V
ID
= −1.0 V)
T
A
= 25°C
T
A
= 0°C to 105°C
Slew Rate (V
in
= 0.5 to 3.0 V, V
CC
= 15 V, R
L
= 2.0 kW, A
v
= 1.0, C
L
= 100 pF)
Unity Gain Bandwidth (V
CC
= 30 V, R
L
= 2.0 kW, C
L
= 100 pF, V
in
= 0.5 Vpp @
f = 70 kHz)
Total Harmonic Distortion (f = 1.0 KHz, A
V
= 10, R
L
= 2.0 kW, V
CC
= 30 V,
V
out
= 2.0 V
PP
)
Voltage Reference
Reference Voltage (I
K
= 10 mA)
T
A
= 25°C
T
A
= 0°C to 105°C
Reference Input Voltage Deviation Over Full Temperature Range
(I
K
= 10 mA, T
A
= 0°C to 105°C)
Minimum Cathode Current for Regulation
Dynamic Impedance
T
A
= 25°C, I
K
= 1.0 to 80 mA, f
t
1.0 KHz
T
A
= 0°C to 125°C, I
K
= 1.0 mA to 60 mA, f
t
1.0 KHz
V
ref
2.574
DV
ref
I
K(min)
|Z
KA
|
0.3
0.5
0.6
2.60
2.60
5.0
55
2.626
22
80
mV
mA
W
V
V
IO
DV
IO
/DT
I
IO
I
IB
V
ICR
A
VOL
50
25
PSRR
CMRR
40
30
I
O+
I
O−
V
OH
27
27
V
OL
SR
BW
THD
0.3
0.3
17
0.5
0.7
0.02
100
100
V/ms
MHz
%
28
mV
10
10
60
16
25
mA
mA
V
40
100
90
dB
dB
−50
0 to
V
CC
−1.5
−150
−150
V
V/mV
2.0
30
30
nA
0.5
7.0
2.0
3.0
mV/°C
nA
mV
http://onsemi.com
3
NCP4300A
2.620
V
ref
, REFERENCE VOLTAGE (V)
I
K
, CATHODE CURRENT (mA)
60
T
A
= 25°C
I
K
= 10 mA
40
2.610
20
2.600
2.590
0
2.580
0
20
40
60
80
100
−20
−1.0
0
1.0
2.0
3.0
V
KA
, CATHODE VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Reference Cathode Current
vs. Cathode Voltage
Figure 3. Reference Voltage
vs. Ambient Temperature
0.4
|Z
KA
|, DYNAMIC IMPEDANCE (W)
I
K
, CATHODE CURRENT (mA)
I
K
= 1.0 mA to 60 mA
0.35
10
T
A
= 25°C
Stable
6.0
Unstable
Stable
2.0
8.0
0.3
4.0
0.25
0.2
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
0
100 pF
1000 pF
1.0
mF
10
mF
100
mF
C
L
, LOAD CAPACITANCE
Figure 4. Reference Dynamic Impedance
vs. Ambient Temperature
0
I
IB
, INPUT BIAS CURRENT (nA)
V
CC
= 5.0 V
0.5
Op−Amp 2
Figure 5. Reference Stability
vs. Load Capacitance
1.0
V
O
, INPUT OFFSET VOLTAGE (mV)
V
CC
= 5.0 V
−5.0
−10
0
Op−Amp 1
−15
Op−Amp 2
Op−Amp 1
−0.5
−20
−1.0
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
−25
0
20
40
60
80
100
T
A
, AMBIENT TEMPERATURE (°C)
Figure 6. Input Offset Voltage
vs. Ambient Temperature
Figure 7. Input Bias Current
vs. Ambient Temperature
http://onsemi.com
4

NCP4300AD相似产品对比

NCP4300AD NCP4300ADR2
描述 DUAL OP-AMP, 3000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO8, SOIC-8 DUAL OP-AMP, 3000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO8, SOIC-8
是否无铅 不含铅 不含铅
厂商名称 Rochester Electronics Rochester Electronics
零件包装代码 SOIC SOIC
包装说明 SOIC-8 SOIC-8
针数 8 8
Reach Compliance Code unknown unknown
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB) 0.15 µA 0.15 µA
标称共模抑制比 60 dB 60 dB
最大输入失调电压 3000 µV 3000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e0 e0
长度 4.9 mm 4.9 mm
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED
功能数量 2 2
端子数量 8 8
最高工作温度 105 °C 105 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED 240
认证状态 COMMERCIAL COMMERCIAL
座面最大高度 1.75 mm 1.75 mm
标称压摆率 0.5 V/us 0.5 V/us
供电电压上限 36 V 36 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
温度等级 OTHER OTHER
端子面层 TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING
端子节距 1.27 mm 1.27 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED 30
标称均一增益带宽 700 kHz 700 kHz
宽度 3.9 mm 3.9 mm

 
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