UNISONIC TECHNOLOGIES CO., LTD
6N90
6.2A, 900V N-CHANNEL
POWER MOSFET
1
TO-220
Power MOSFET
DESCRIPTION
1
The UTC
6N90
is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide costumers
with planar stripe and DMOS technology. This technology allows a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
6N90
is generally applied in high efficiency switch
mode power supplies.
TO-220F
1
TO-220F1
FEATURES
1
TO-262
* R
DS(ON)
< 2.3Ω @ V
GS
=10V, I
D
=3.1A
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
6N90L-TA3-T
6N90G-TA3-T
6N90L-TF3-T
6N90G-TF3-T
6N90L-TF1-T
6N90G-TF1-T
6N90L-T2Q-T
6N90G-T2Q-T
Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220
TO-220F
TO-220F1
TO-262
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Note:
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Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-492.F
6N90
MARKING
Power MOSFET
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QW-R502-492.F
6N90
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
900
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
6.2
A
Drain Current
Pulsed (Note 2)
I
DM
24
A
Single Pulsed (Note 3)
E
AS
300
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
16.7
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
167
W
Power Dissipation
P
D
TO-220F/TO220F1
56
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 16.6mH, I
AS
= 6A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
6A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
0.75
2.25
UNIT
°C/W
°C/W
°C/W
PARAMETER
Junction to Ambient
TO-220/TO-262
Junction to Case
TO-220F/TO220F1
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3 of 8
QW-R502-492.F
6N90
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
900
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
1.07
V
DS
=900V, V
GS
=0V
10
Drain-Source Leakage Current
I
DSS
100
V
DS
=720V, T
C
=125°C
Forward
V
GS
=+30V, V
DS
=0V
+100
Gate- Source Leakage Current
I
GSS
-100
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
3.0
5.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=3.1A
1.85 2.3
Forward Transconductance
g
FS
V
DS
=50V, I
D
=3.1A (Note 1)
5.5
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
1260 1770
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
160 180
15
30
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
40
50
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
9.6
(Note 1, 2)
13
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
75
80
Rise Time
t
R
152 190
V
DD
=30V, I
D
=1A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
200 240
110 150
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
6.0
Maximum Body-Diode Pulsed Current
I
SM
24
Drain-Source Diode Forward Voltage
V
SD
I
S
=6.2A, V
GS
=0V
1.4
Body Diode Reverse Recovery Time
t
RR
630
I
S
=6.2A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
6.9
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
UNIT
V
V/°C
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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4 of 8
QW-R502-492.F
6N90
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
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www.unisonic.com.tw
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QW-R502-492.F
微控制器 MCU
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