It is possible to generate a 32.768kHz output crystal oscillator with excellent temperature characteristics by using AT-cut crystal.
There are 3 pad layout package options available for optimized mounting, making these devices ideal for miniature crystal oscillators.
FEATURES
▪
Wide range of operating supply voltage: 1.6 to 5.5V
▪
Oscillation frequency(fundamental oscillator):16.777216MHz or 33.554432MHz
▪
Output frequency: 32.768kHz (oscillation frequency divided by 512 or 1024)
▪
-40 to +125°C operating temperature range
▪
Regulated voltage drive oscillator circuit for reduced power consumption
and crystal drive current
▪
3 pad layout options for mounting
5059HAx : for Flip Chip Bonding
5059HBx : for Wire Bonding(Type I)
5059HCx : for Wire Bonding(Type II)
▪
Oscillation capacitors C
G
,C
D
built-in
▪
Standby function
High impedance in standby mode, oscillator stops
▪
Power-saving pull-up resistor built-in
▪
±1mA output drive capability (T
a
=-40 to +85°C)
±0.8mA output drive capability (T
a
=-40 to +125°C)
▪
50±5% output duty (1/2VDD)
▪
Wafer form (WF5059Hxx)
▪
Chip form (CF5059Hxx)
APPLICATIONS
▪
32.768kHz output crystal oscillator modules
SERIES CONFIGURATION
Version
*1
Oscillation frequency[MHz]
（fundamental
oscillator）
Oscillation capacitors
*2
[pF]
C
G
3
C
D
2
Output
frequency[kHz]
32.768
(f
OSC
/512)
32.768
(f
OSC
/1024)
PAD layout
Flip Chip Bonding
Wire Bonding TypeⅠ
Wire Bonding TypeⅡ
Flip Chip Bonding
Wire Bonding TypeⅠ
Wire Bonding TypeⅡ
5059HAA
5059HBA
5059HCA
5059HAB
5059HBB
5059HCB
*1. It becomes WF5059Hxx in case of the wafer form and CF5059Hxx in case of the chip form.
*2. The oscillation capacitors do not contain parasitic capacitance.
33.554432
2
1
16.777216
ORDERING INFORMATION
Device
WF5059Hxx-4
Package
Wafer form
Form WF:Wafer form
CF:Chip(Die) form
Version Name
WF5059H□□-4
Oscillation frequency A:16.777216MHz
B:33.554432MHz
PAD layout
A:For Flip Chip Bonding
B:For Wire Bonding(Type I)
C:For Wire Bonding(Type II)
CF5059Hxx-4
Chip form
SEIKO NPC CORPORATION -
1
5059H series
PAD LAYOUT
▪
WF5059HAx
(For Flip Chip Bonding)
(375,345)
VSS
5
4
Q
Q
5
▪
CF5059HBx
(For Wire Bonding (Type I))
(375,345)
4
VSS
▪
CF5059HCx
(For Wire Bonding (Type II))
(375,345)
VDD
5
4
Q
Y
INHN
6
(0,0)
3
VDD
Y
VDD
6
(0,0)
3
INHN
Y
INHN
6
(0,0)
3
VSS
1
(-375,-345) XT
X
2
XTN
1
(-375,-345) XTN
X
2
XT
1
(-375,-345) XT
X
2
XTN
Chip size: 0.75×0.69mm
Chip thickness : 130m
PAD size : 80m
Chip base : Vss level
Chip size: 0.75×0.69mm
Chip thickness : 130m
PAD size : 80m
Chip base : Vss level
Chip size: 0.75×0.69mm
Chip thickness : 130m
PAD size : 80m
Chip base : Vss level
PAD COORDINATES
PAD
No.
1
2
3
4
5
6
PAD coordinates[μm]
X
-146
146
265
265
-265
-265
Y
-235
-235
-41
186
186
-41
PIN DESCRIPTION
PAD No.
5059HAx
1
2
3
4
5
6
5059HBx
2
1
6
5
4
3
5059HCx
1
2
5
4
3
6
XT
XTN
VDD
Q
VSS
INHN
Crystal connection pins.
Crystal is connected between XT and XTN.
(+)supply voltage
Output(32.768kHz)
(-)ground
Input pin controlled output state(oscillator stops when
LOW),Power-saving pull-up resistor built-in
Pin
Function
BLOCK DIAGRAM
INHN
VRG
R
F
DIVIDER
1/512
or
1/1024
C
D
CMOS
Q
VDD
VSS
XT
C
G
R
D
XTN
SEIKO NPC CORPORATION - 2
5059H series
SPECIFICATIONS
Absolute Maximum Ratings
Vss=0V
Parameter
Supply voltage range
*1
Input voltage range
Output current
*3
Junction temperature
*3
Storage temperature range
*4
*1*2
Symbol
V
DD
V
IN
V
OUT
I
OUT
T
j
T
STG
Input pins
Output pins
Q pin
Condition
Between VDD and VSS
Rating
-0.3 to +7.0
-0.3 to V
DD
+0.3
-0.3 to V
DD
+0.3
±3
150
-55 to +150
Unit
V
V
V
mA
°C
°C
Output voltage range
*1*2
Chip form, Wafer form
*1. This parameter rating is the values that must never exceed even for a moment. This product may suffer breakdown if this parameter rating is exceeded.
Operation and characteristics are guaranteed only when the product is operated at recommended operating conditions.
*2. V
DD
is a V
DD
value of recommended operating conditions.
*3. Do not exceed the absolute maximum ratings. If they are exceeded, a characteristic and reliability will be degraded.
*4. When stored in nitrogen or vacuum atmosphere applied to IC itself only (excluding packaging materials).
Recommended Operating Conditions
Vss=0V
Parameter
Oscillator frequency
Output frequency
Operating supply voltage
Input voltage
Operating temperature
Output load capacitance
Symbol
f
OSC
f
OUT
V
DD
V
IN
T
a
C
LOUT
Q output
Condition
V
DD
=1.6 to 5.5V
5059HxA ver.
5059HxB ver.
1.6
V
SS
-40
Rating
MIN
TYP
16.777216
33.554432
32.768
5.5
V
DD
+125
15
MAX
Unit
MHz
kHz
V
V
°C
pF
V
DD
=1.6 to 5.5V, C
LOUT
=15pF
Between VDD and VSS
*1
Input pins
*1. Mount a ceramic chip capacitor that is larger than 0.01μF proximal to IC (within approximately 3mm) between VDD and VSS in order to obtain
stable operation of 5059H series. In addition, the wiring pattern between IC and capacitor should be as wide as possible.
Note. Since it may influence the reliability if it is used out of range of recommended operating conditions, this product should be used within this range.
SEIKO NPC CORPORATION - 3
5059H series
Electrical Characteristics
DC Characteristics
V
DD
=1.6 to 5.5V, V
SS
=0V, T
a
= -40 to +125°C unless otherwise noted.
Parameter
Q pin
HIGH-level output voltage
Q pin
LOW-level output voltage
INHN pin
HIGH-level input voltage
INHN pin
LOW-level input voltage
Q pin
Output leakage current
Symbol
V
OH
Conditions
Measurement circuit 3, I
OH
=-1mA, T
a
=-40 to +85°C
Measurement circuit 3, I
OH
=-0.8mA, T
a
=-40 to +125°C
Measurement circuit 3, I
OL
=1mA, T
a
=-40 to +85°C
Measurement circuit 3, I
OH
=0.8mA, T
a
=-40 to +125°C
Measurement circuit 4
Measurement circuit 4
Measurement circuit 5,
INHN=“Low”
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
f
OSC
=16.777216MHz,
f
OUT
=32.768kHz,
T
a
=-40 to +125°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
f
OSC
=16.777216MHz,
f
OUT
=32.768kHz,
T
a
=-40 to +85°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
f
OSC
=33.554432MHz,
f
OUT
=32.768kHz,
T
a
=-40 to +125°C
Measurement circuit 1,
INHN=“OPEN”,
output load=15pF,
f
OSC
=33.554432MHz,
f
OUT
=32.768kHz,
T
a
=-40 to +85°C
Q=V
DD
Q=V
SS
V
DD
=5.0V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=5.0V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=5.0V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
V
DD
=5.0V
V
DD
=3.3V
V
DD
=2.5V
V
DD
=1.8V
-10
70
65
63
60
70
65
63
60
140
130
126
120
140
130
126
120
175
163
158
150
140
130
126
120
280
260
252
240
245
228
221
210
10
20
0.6
50
150
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
Design value (a monitor pattern on a wafer is tested),
Excluding parasitic capacitance.
2.25
1.50
1.50
0.75
2
100
300
3.00
2.00
2.00
1.00
20
200
600
3.75
2.50
2.50
1.25
A
M
k
k
pF
A
A
A
A
MIN
V
DD
-0.4
Rating
TYP
MAX
V
DD
Unit
V
V
OL
V
IH
V
IL
I
Z
I
DD1
_5.0V
I
DD1
_3.3V
I
DD1
_2.5V
0
0.7V
DD
0.4
V
V
0.3V
DD
10
V
A
Current consumption
(HxA ver. : divide-by-512
frequency output)
I
DD1
_1.8V
I
ＤＤ２
_5.0V
I
ＤＤ２
_3.3V
I
ＤＤ２
_2.5V
I
ＤＤ２
_1.8V
I
DD3
_5.0V
I
DD3
_3.3V
I
DD3
_2.5V
Current consumption
(HxB ver. : divide-by-1024
frequency output)
I
DD3
_1.8V
I
ＤＤ
4
_5.0V
I
ＤＤ
4
_3.3V
I
ＤＤ
4
_2.5V
I
ＤＤ
4
_1.8V
Standby current
INHN pin
pull-up resistance
Oscillator feedback resistance
Oscillator capacitance
(HxA ver. : divide-by-512
frequency output)
Oscillator capacitance
(HxB ver. : divide-by-1024
frequency output)
I
ST
R
PU1
R
PU2
R
f
C
G
C
D
C
G
C
D
Measurement circuit 1,INHN=“Low”,T
a
=-40 to +85°C
Measurement circuit 1,INHN=“Low”,T
a
=-40 to +125°C
Measurement circuit 6
Measurement circuit 6
pF
SEIKO NPC CORPORATION - 4
5059H series
AC Characteristics
V
DD
=1.6 to 5.5V, V
SS
=0V, T
a
=-40 to +125°C unless otherwise noted
Parameter
Q pin
Output rise time
Q pin
Output fall time
Q pin
Output duty cycle
Q pin
Output disable delay time
Symbol
t
r
t
f
DUTY
t
OD
Conditions
Measurement circuit 1, C
LOUT
=15pF,
0.1V
DD
0.9V
DD
Measurement circuit 1, C
LOUT
=15pF,
0.9V
DD
0.1V
DD
Measurement circuit 1, T
a
=25°C,
C
LOUT
=15pF
Measurement circuit 2, T
a
=25°C, C
LOUT
≤15pF
45
Rating
MIN
TYP
50
50
50
MAX
200
200
55
1
Unit
ns
ns
%
s
Timing chart
0.9V
D D
0.9V
DD
Q
0.1V
D D
0.1V
D D
Tw
T
DUTY measurement
voltage 0.5V
DD
DUTY = Tw/T×100 (%)
t
r
t
f
Figure 1.Output switching waveform
V
DD
INHN
V
IL
V
SS
V
IH
t
OD
V
DD
Q
V
SS
f
OUT
0.1V
Hi-Z
Low
f
OUT
0.1V
0.5V
DD
When INHN goes HIGH to LOW, the Q output becomes high impedance.
When INHN goes LOW to HIGH, the Q output goes LOW once and then becomes normal output operation after having detected oscillation signals.
Figure 2.Output disable and oscillation start timing chart
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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