IKQ100N60T
TRENCHSTOP
TM
series
LowLossDuoPack:IGBTinTRENCHSTOP
TM
andFieldstoptechnology
withsoft,fastrecoveryanti-parallelEmitterControlleddiode
Features:
•VerylowV
CE(sat)
1.5V(typ.)
•Maximumjunctiontemperature175°C
•Shortcircuitwithstandtime5µs
•TRENCHSTOP
TM
andFieldstoptechnologyfor600V
applicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-highswitchingspeed
•PositivetemperaturecoefficientinV
CE(sat)
•LowEMI
•LowgatechargeQ
G
•Increasedcurrentcapability
•Greenpackage
•Verysoft,fastrecoveryanti-parallelEmitterControlledHE
diode
Applications:
•Generalpurposeinverters
•Uninterruptiblepowersupplies
•Motordrives
•Mediumtolowswitchingfrequencypowerconverters
C
G
E
KeyPerformanceandPackageParameters
Type
IKQ100N60T
V
CE
600V
I
C
100A
V
CEsat
,T
vj
=25°C
1.5V
T
vjmax
175°C
Marking
K100T60
Package
PG-TO247-3-46
Datasheet
www.infineon.com
PleasereadtheImportantNoticeandWarningsattheendofthisdocument
V2.3
2017-11-15
IKQ100N60T
TRENCHSTOP
TM
series
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
V2.3
2017-11-15
IKQ100N60T
TRENCHSTOP
TM
series
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,T
vj
≥25°C
DCcollectorcurrent,limitedbyT
vjmax
T
c
=25°Cvaluelimitedbybondwire
T
c
=130°C
Pulsedcollectorcurrent,t
p
limitedbyT
vjmax
Turn off safe operating area
V
CE
≤600V,T
vj
≤175°C,t
p
=1µs
Diodeforwardcurrent,limitedbyT
vjmax
T
c
=25°Cvaluelimitedbybondwire
T
c
=117°C
Diodepulsedcurrent,t
p
limitedbyT
vjmax
Gate-emitter voltage
Short circuit withstand time
V
GE
=15.0V,V
CC
≤400V
Allowed number of short circuits < 1000
Time between short circuits:
≥
1.0s
T
vj
=150°C
PowerdissipationT
c
=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
1)
wave soldering 1.6mm (0.063in.) from case for 10s
ThermalResistance
Parameter
R
th
Characteristics
IGBT thermal resistance,
2)
junction - case
Diode thermal resistance,
2)
junction - case
Thermal resistance
junction - ambient
R
th(j-c)
R
th(j-c)
R
th(j-a)
Symbol Conditions
Symbol
V
CE
I
C
I
Cpuls
-
I
F
I
Fpuls
V
GE
Value
600
160.0
100.0
400.0
400.0
160.0
100.0
400.0
±20
Unit
V
A
A
A
A
A
V
t
SC
5
P
tot
T
vj
T
stg
714.0
-40...+175
-55...+150
260
µs
W
°C
°C
°C
Value
min.
typ.
max.
Unit
-
-
-
-
-
-
0.21
0.35
40
K/W
K/W
K/W
1)
2)
Package not recommended for surface mount application
Thermal resistance of thermal grease R
th(c-s)
(case to heat sink) of more than 0.1K/W not included.
Datasheet
3
V2.3
2017-11-15
IKQ100N60T
TRENCHSTOP
TM
series
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
StaticCharacteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V,I
C
=0.20mA
Collector-emitter saturation voltage
V
CEsat
V
GE
=15.0V,I
C
=100.0A
T
vj
=25°C
T
vj
=175°C
V
GE
=0V,I
F
=100.0A
T
vj
=25°C
T
vj
=175°C
I
C
=1.20mA,V
CE
=V
GE
V
CE
=600V,V
GE
=0V
T
vj
=25°C
T
vj
=175°C
V
CE
=0V,V
GE
=20V
V
CE
=20V,I
C
=100.0A
600
-
-
-
-
4.1
-
-
-
-
-
1.50
1.90
1.65
1.60
4.9
-
2500
-
63.0
none
-
2.00
-
2.05
-
5.7
40
-
100
-
V
V
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V
F
V
GE(th)
I
CES
I
GES
g
fs
r
G
V
V
µA
nA
S
Ω
ElectricalCharacteristic,atT
vj
=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
C
ies
C
oes
C
res
Q
G
L
E
V
GE
=15.0V,V
CC
≤400V,
t
SC
≤5µs
T
vj
=150°C
V
CC
=480V,I
C
=100.0A,
V
GE
=15V
V
CE
=25V,V
GE
=0V,f=1MHz
-
-
-
-
-
6230
360
175
610.0
13.0
-
-
-
-
-
nC
nH
pF
Symbol Conditions
Value
min.
typ.
max.
Unit
Short circuit collector current
Max. 1000 short circuits
I
C(SC)
Time between short circuits:
≥
1.0s
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
802
-
A
Symbol Conditions
Value
min.
-
-
-
-
-
-
-
typ.
30
38
290
31
3.10
2.50
5.60
max.
-
-
-
-
-
-
-
Unit
T
vj
=25°C,
V
CC
=400V,I
C
=100.0A,
V
GE
=0.0/15.0V,
R
G(on)
=3.6Ω,R
G(off)
=3.6Ω,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
ns
ns
ns
ns
mJ
mJ
mJ
Datasheet
4
V2.3
2017-11-15
IKQ100N60T
TRENCHSTOP
TM
series
DiodeCharacteristic,atT
vj
=25°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=25°C,
V
R
=400V,
I
F
=100.0A,
di
F
/dt=1000A/µs
-
-
-
-
230
2.80
23.0
-450
-
-
-
-
ns
µC
A
A/µs
Diode peak reverse recovery current
I
rrm
di
rr
/dt
SwitchingCharacteristic,InductiveLoad
Parameter
IGBTCharacteristic,atT
vj
=175°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
DiodeCharacteristic,atT
vj
=175°C
Diode reverse recovery time
Diode reverse recovery charge
Diode peak rate of fall of reverse
recoverycurrentduringt
b
t
rr
Q
rr
T
vj
=175°C,
V
R
=400V,
I
F
=100.0A,
di
F
/dt=1000A/µs
-
-
-
-
328
8.70
48.0
-847
-
-
-
-
ns
µC
A
A/µs
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
vj
=175°C,
V
CC
=400V,I
C
=100.0A,
V
GE
=0.0/15.0V,
R
G(on)
=3.6Ω,R
G(off)
=3.6Ω,
Lσ=63nH,Cσ=31pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
-
-
-
-
-
-
-
31
52
351
42
6.00
3.70
9.70
-
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
mJ
Symbol Conditions
Value
min.
typ.
max.
Unit
Diode peak reverse recovery current
I
rrm
di
rr
/dt
Datasheet
5
V2.3
2017-11-15
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