UNISONIC TECHNOLOGIES CO., LTD
10N70-C
10A, 700V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The
UTC 10N70-C
is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have a
high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and bridge
circuits.
FEATURES
* R
DS(ON)
<0.86Ω@V
GS
=10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Package
Lead Free
Halogen Free
10N70L-TF3-T
10N70G-TF3-T
TO-220F
Note: Pin Assignment: G: Gate
D: Drain
S: Source
MARKING INFORMATION
PACKAGE
MARKING
TO-220
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Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-A80.A
10N70-C
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
10
A
Continuous
I
D
10
A
Drain Current
Pulsed (Note 2)
I
DM
40
A
Single Pulsed (Note 3)
E
AS
150
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
50
W
P
D
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 3mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25
Ω
Starting T
J
= 25°C
4. I
SD
≤
9.5A, di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
θ
JC
RATING
62.5
2.5
UNIT
°C/W
°C/W
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
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2 of 6
QW-R502-A80.A
10N70-C
ELECTRICAL CHARACTERISTICS
( T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
700
V
V
DS
= 700V, V
GS
= 0V
10
µA
Forward
V
GS
= 30 V, V
DS
= 0 V
100 nA
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30 V, V
DS
= 0 V
-100 nA
Breakdown Voltage Temperature Coefficient
∆BV
DSS
/∆T
J
I
D
= 250 µA, Referenced to 25°C
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 5A
0.75 0.86
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1495 1700 pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
Output Capacitance
C
OSS
414 200 pF
Reverse Transfer Capacitance
C
RSS
8
20
pF
SWITCHING CHARACTERISTICS
99
120 ns
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
132 160 ns
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
233 270 ns
Turn-Off Fall Time
t
F
121 140 ns
43
60
nC
Total Gate Charge
Q
G
V
DS
=50V, I
D
=1.3A, V
GS
=10 V
Gate-Source Charge
Q
GS
13
nC
(Note 1, 2)
Gate-Drain Charge
Q
GD
10
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
=10A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
10
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
40
A
Forward Current
Reverse Recovery Time
t
rr
420
ns
V
GS
= 0 V, I
S
= 10A,
dI
F
/ dt = 100 A/µs (Note 1)
Reverse Recovery Charge
Q
RR
4.2
µC
Notes: 1. Pulse Test : Pulse width
≤300µs,
Duty cycle
≤2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-A80.A
10N70-C
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-A80.A
10N70-C
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
L
V
DS
BV
DSS
I
AS
R
D
V
DD
D.U.T.
t
p
t
p
Time
V
DD
I
D(t)
V
DS(t)
10V
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-A80.A
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