Si3442CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Avalanche Current
Single Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
20
± 12
8
d
6.6
6.5
a, b
5.2
a, b
20
2.2
1.4
a, b
8
3.2
2.7
1.7
1.7
a, b
1.1
a, b
- 55 to 150
°C
W
mJ
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Foot (Drain)
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
61
38
Maximum
74
46
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 120 °C/W.
d. Package limited
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3442CDV
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5.2 A, V
GS
½0
V
0.8
10
3
6
4
T
C
= 25 °C
2.2
20
1.2
20
6
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1.9
I
D
5.2 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 10 V, R
L
= 1.9
I
D
5.2 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
335
94
45
9.2
4.3
1.1
0.9
3
9
13
17
5
3
10
13
6
6
18
20
26
10
6
20
20
12
ns
14
7
nC
pF
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
= 6.5 A
V
GS
½4.5
V, I
D
= 5.9 A
V
GS
½2.5
V, I
D
= 2 A
V
DS
= 10 V, I
D
= 6.5 A
Min.
20
Typ.
Max.
Unit
V
15
- 2.8
0.6
1.5
± 100
1
10
20
0.0225
0.0250
0.0350
22
0.0270
0.0300
0.0490
mV/°C
V
nA
µA
A
S
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3442CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 V thru 3 V
4
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
3
T
C
= 25
°C
2
5
10
V
GS
= 2 V
5
1
T
C
= 125
°C
T
C
= - 55
°C
0
0.5
1
1.5
2
0
0
0.5
1
1.5
V
DS
- Drain-to-Source Voltage (V)
2
0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.047
460
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.039
V
GS
= 2.5 V
C - Capacitance (pF)
345
C
iss
0.031
V
GS
= 4.5 V
0.023
V
GS
= 10 V
230
115
C
oss
C
rss
0.015
0
5
10
I
D
- Drain Current (A)
15
20
0
0
5
10
15
V
DS
- Drain-to-Source Voltage (V)
20
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 6.5 A
8
V
DS
= 5 V
6
V
DS
= 10 V
4
V
DS
= 16 V
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
1.2
1.4
I
D
= 6.5 A
Capacitance
V
GS
= 4.5 V
V
GS
= 10 V
1.0
0.8
2
0
0
2
4
6
8
Q
g
- Total Gate Charge (nC)
10
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3442CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.08
10
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.06
I
D
= 6.5 A
I
S
- Source Current (A)
0.04
T
J
= 125
°C
0.02
1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
1.1
On-Resistance vs. Gate-to-Source Voltage
25
20
0.95
I
D
= 250 μA
0.8
Power (W)
125
150
V
GS(th)
(V)
15
10
0.65
5
0.5
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
100
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power (Junction-to-Ambient)
100 μs
1 ms
10 ms
100 ms
0.1
BVDSS Limited
10s ,1 s
DC
T
A
= 25
°C
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1
Safe Operating Area, Junction-to-Ambient
www.vishay.com
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For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3442CDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
9
7.2
I
D
- Drain Current (A)
5.4
3.6
1.8
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
Current Derating*
3.5
1.25
2.8
1
Power (W)
1.4
Power (W)
2.1
0.75
0.5
0.7
0.25
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62654
S12-0976-Rev. A, 30-Apr-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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