Silicon Carbide Schottky Diode
IDW40G120C5B
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Final Da ta s heet
Rev. 2.0 2014-06-10
Indust rial Po wer C o ntrol
IDW40G120C5B
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!
TM
SiC Schottky Diode
1
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
1)
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
2
CASE
3
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks:
www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 – anode 1
Pin 2 and backside – cathode
Pin 3 – anode 2
Key Performance and Package Parameters (leg/device)
Type
IDW40G120C5B
V
DC
1200V
I
F
20 / 40 A
Q
C
101 / 202nC
T
j,max
175°C
Marking
D4012B5
Package
PG-TO247-3
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2014-06-10
IDW40G120C5B
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Table of Contents
Description…. ............................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum ratings ......................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics............................................................................................................................. 5
Electrical Characteristics diagram .............................................................................................................. 6
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer…. ............................................................................................................................................. 10
Final Data Sheet
3
Rev. 2.0, 2014-06-10
IDW40G120C5B
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current for R
th(j-c,max)
T
C
= 148°C, D=1
T
C
= 135°C, D=1
T
C
= 25°C, D=1
Surge non-repetitive forward current, sine halfwave
T
C
=25°C, t
p
=10ms
T
C
=150°C, t
p
=10ms
Non-repetitive peak forward current
T
C
= 25°C,
t
p
=10 µs
i²t value
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
Diode dv/dt ruggedness
V
R
=0...960 V
Power dissipation for R
th(j-c,max)
T
C
= 25°C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M3 and M4 screws
Symbol
V
RRM
Value (leg/device)
1200
20 / 40
25 / 51
55 / 110
145 / 290
140 / 280
1575 / 3150
105 / 420
98 / 392
80
201 / 402
-55…175
260
0.7
Unit
V
I
F
A
I
F,SM
I
F,max
∫ i²dt
dv/dt
P
tot
T
j
;T
stg
T
sold
M
A
A
A²s
V/ns
W
°C
°C
Nm
Thermal Resistances
Parameter
Characteristic
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
th(j-c)
R
th(j-a)
leaded
-
-
0.6/0.3
-
0.8/0.4
62
K/W
K/W
Symbol Conditions
Value (leg/device)
min.
typ.
max.
Unit
Final Data Sheet
4
Rev. 2.0, 2014-06-10
IDW40G120C5B
5
th
Generation thinQ!™ 1200 V SiC Schottky Diode
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified
Parameter
DC blocking voltage
Diode forward voltage
Reverse current
Symbol Conditions
V
DC
V
F
I
R
T
j
= 25°C
I
F
= 20/40 A,
T
j
=25°C
I
F
= 20/40 A,
T
j
=150°C
V
R
=1200 V,
T
j
=25°C
V
R
=1200 V,
T
j
=150°C
Value (leg/device)
min.
1200
-
-
typ.
-
1.4
1.7
12 / 23
59 / 118
max.
-
1.65
2.30
166 / 332
850 / 1700
Unit
V
V
µA
Dynamic Characteristics, at T
j
=25°C, unless otherwise specified
Parameter
Total capacitive charge
Q
C
Symbol Conditions
V
R
= 800 V,
T
j
=150°C & 25°C
Value (leg/device)
min.
typ.
max.
Unit
Q
C
½
C
(
V
)
dV
0
V
R
-
-
-
-
101 / 202
1296/2592
92 / 183
73 / 146
-
-
-
-
nC
Total Capacitance
C
V
R
=1 V,
f=1
MHz
V
R
=400 V,
f=1
MHz
V
R
=800 V,
f=1
MHz
pF
Final Data Sheet
5
Rev. 2.0, 2014-06-10
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