UNISONIC TECHNOLOGIES CO., LTD
MGBR10S30
MOS GATED BARRIER
RECTIFIER
DESCRIPTION
The UTC
MGBR10S30
is a surface mount mos gated barrier
rectifier, it uses UTC’s advanced technology to provide customers
with low forward voltage drop and high current capability, etc.
The UTC
MGBR10S30
suitable for free wheeling, high frequency
inverters, polarity protection, and low voltage.
Preliminary
DIODE
FEATURES
* Super low forward voltage drop
* High current capability
* High surge capability
* High efficiency
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MGBR10S30L-T27-R
MGBR10S30G-T27-R
Note: Pin Assignment: A: Anode K: Common Cathode
Package
TO-277
Pin Assignment
1
2
3
A
K
A
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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QW-R601-242.a
MGBR10S30
Preliminary
DIODE
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
DC Blocking Voltage (Note 1)
V
RM
30
V
Working Peak Reverse Voltage
V
RWM
30
V
Peak Repetitive Reverse Voltage
V
RRM
30
V
RMS Reverse Voltage
V
R(RMS)
21
V
Average Rectified Output Current
T
C
=125°C
I
O
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
I
FSM
175
A
Single Half Sine-Wave Superimposed on Rated Load
Operating Junction Temperature
T
J
-65~+150
°C
Storage Temperature
T
STG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
73
13
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
=25°C
unless otherwise specified.)
PARAMETER
Reverse Breakdown Voltage (Note 1)
TEST CONDITIONS
I
R
=0.50mA
I
F
=10A, T
C
=25°C
Forward Voltage Drop
V
FM
I
F
=10A, T
C
=125°C
V
R
=30V, T
C
=25°C
Peak Reverse Current at Rated DC
I
RM
Blocking Voltage (Note 1)
V
R
=30V, T
C
=125°C
Notes: 1. Short duration pulse test used to minimize self-heating effect.
2. Thermal resistance junction to case mounted on heatsink.
3. Mounted on an FR4 PCB, single-sided copper, with 100cm
2
copper pad area.
SYMBOL
V
(BR)R
MIN
30
TYP MAX UNIT
V
0.43
V
0.38
V
500
μA
50
mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-242.a
MGBR10S30
Preliminary
DIODE
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R601-242.a
微控制器 MCU
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