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KM416C4104BS-6: 产品描述EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50; 产品类别存储存储; 文件大小804KB，共36页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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KM416C4104BS-6概述

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

KM416C4104BS-6规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SAMSUNG(三星)
零件包装代码	TSOP2
包装说明	TSOP2, TSOP50,.46,32
针数	50
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FAST PAGE WITH EDO
最长访问时间	60 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G50
JESD-609代码	e0
长度	20.95 mm
内存密度	67108864 bit
内存集成电路类型	EDO DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	50
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	4MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP50,.46,32
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
电源	5 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.2 mm
自我刷新	NO
最大待机电流	0.001 A
最大压摆率	0.11 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
宽度	10.16 mm

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KM416C4004B, KM416C4104B

CMOS DRAM

4M x 16bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random

access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this

family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM

family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES

• Part Identification

- KM416C4004B(5.0V, 8K Ref.)

- KM416C4104B(5.0V, 4K Ref.)

•

Active Power Dissipation

Unit : mW

Speed

-45

-5

-6

550

495

440

715

660

605

• Extended Data Out Mode operation

• 2 CAS Byte/Word Read/Write operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic TSOP(II) package

• +5.0V±10% power supply

•

Refresh Cycles

Part

NO.

KM416C4004B*

KM416C4104B

Refresh

cycle

Refresh time

Normal

64ms

RAS

UCAS

LCAS

Control

Clocks

Vcc

Vss

Lower

Data in

Buffer

Sense Amps & I/O

Lower

Data out

Buffer

Upper

Data in

Buffer

Upper

Data out

Buffer

FUNCTIONAL BLOCK DIAGRAM

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms

•

Performance Range

Speed

-45

-5

-6

Refresh Timer

Refresh Control

Refresh Counter

Row Decoder

DQ0

DQ7

Memory Array

4,194,304 x 16

Cells

RAC

45ns

50ns

60ns

CAC

12ns

13ns

15ns

74ns

84ns

104ns

HPC

17ns

20ns

25ns

A0~A12

(A0~A11)*1

A0~A8

(A0~A9)*1

Row Address Buffer

Col. Address Buffer

Column Decoder

DQ8

DQ15

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to

change products and specifications without notice.

KM416C4104BS-6相似产品对比

	KM416C4104BS-6	KM416C4004BS-6	KM416C4004BS-45	KM416C4004BS-5	KM416C4104BS-5	KM416C4104BS-45
描述	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50	EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
包装说明	TSOP2, TSOP50,.46,32	TSOP2, TSOP50,.46,32	TSOP2,	TSOP2, TSOP50,.46,32	TSOP2, TSOP50,.46,32	TSOP2, TSOP50,.46,32
针数	50	50	50	50	50	50
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
最长访问时间	60 ns	60 ns	45 ns	50 ns	50 ns	45 ns
其他特性	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50	R-PDSO-G50
长度	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm	20.95 mm
内存密度	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
内存宽度	16	16	16	16	16	16
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	50	50	50	50	50	50
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
是否Rohs认证	不符合	不符合	-	不符合	不符合	不符合
I/O 类型	COMMON	COMMON	-	COMMON	COMMON	COMMON
JESD-609代码	e0	e0	-	e0	e0	e0
输出特性	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE
封装等效代码	TSOP50,.46,32	TSOP50,.46,32	-	TSOP50,.46,32	TSOP50,.46,32	TSOP50,.46,32
电源	5 V	5 V	-	5 V	5 V	5 V
刷新周期	4096	8192	-	8192	4096	4096
自我刷新	NO	NO	-	NO	NO	NO
最大待机电流	0.001 A	0.001 A	-	0.001 A	0.001 A	0.001 A
最大压摆率	0.11 mA	0.11 mA	-	0.12 mA	0.12 mA	0.13 mA
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

KM416C4104BS-6

KM416C4104BS-6概述

KM416C4104BS-6规格参数

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