SF5G49, SF5J49, USF5G49, USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49, SF5J49, USF5G49, USF5J49
Medium Power Control Applications
•
•
•
Repetitive peak off-state voltage: V
DRM
= 400V, 600 V
Repetitive peak reverse voltage: V
RRM
= 400V, 600 V
Average on-state current: I
T (AV)
= 5 A
Gate trigger current: I
GT
= 70 µA max
Unit: mm
Maximum Ratings
Characteristics
Repetitive peak off-state
voltage and Repetitive
peak reverse voltage
(R
GK
=
330
Ω)
Non-repetitive peak
reverse voltage
(non-repetitive
<
5 ms,
T
j
=
0~125°C,
R
GK
=
330
Ω)
Average on-state current
R.M.S on-state current
Peak one cycle surge on-state current
(non-repetitive)
I t limit value
Peak gate power dissipation
Average gate power dissipation
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Junction temperature
Storage temperature range
2
Symbol
SF5G49
USF5G49
SF5J49
USF5J49
SF5G49
USF5G49
SF5J49
USF5J49
Rating
400
Unit
V
DRM
V
RRM
V
600
500
V
RSM
720
I
T (AV)
I
T (RMS)
I
TSM
It
P
GM
P
G (AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
V
5
7.8
65 (50 Hz)
20
0.5
0.05
5
−5
200
−40~125
−40~125
A
A
A
As
W
W
V
V
mA
°C
°C
2
JEDEC
JEITA
TOSHIBA
―
―
13-7F1A
Weight: 0.36 g (typ.)
Note: Should be used with gate resistance as shown below:
Anode
Gate
R
GK
<
330
Ω
=
Cathode
JEDEC
JEITA
TOSHIBA
―
―
13-F2A
Weight: 0.28 g (typ.)
1
2005-09-05
SF5G49, SF5J49, USF5G49, USF5J49
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Repetitive peak off-state current
and Repetitive peak reverse current
Peak on-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Critical rate of rise of off-state voltage
Holding current
Thermal resistance (junction to case)
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
dv/dt
I
H
R
th (j-c)
Test Condition
V
DRM
=
V
RRM
=
Rated
R
GK
=
330
Ω
I
TM
=
12 A
V
D
=
6 V, R
L
=
100
Ω
R
GK
=
330
Ω
V
D
=
Rated
×
2/3, Tc
=
125°C
V
DRM
=
Rated
×
2/3, Tc
=
75°C
R
GK
=
330
Ω,
Exponential rise
R
L
=
100
Ω,
R
GK
=
330
Ω
DC
Min
⎯
⎯
⎯
3
0.2
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
50
2.5
⎯
Max
20
1.6
0.8
70
⎯
⎯
⎯
6.0
Unit
µA
V
V
µA
V
V/µs
mA
°C/W
Marking
Part No.
(or abbreviation code)
*1
Part No.
SF5G49, USF5G49
SF5J49, USF5J49
F5G49
Part No. (or abbreviation code)
*1
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
F5G49
F5J49
Transient thermal impedance
(junction to case)
Transient thermal impedance
r
th (j-c)
(°C/W)
10
1
0.1
0.001
0.01
0.1
1
10
Time
t (s)
2
2005-09-05
SF5G49, SF5J49, USF5G49, USF5J49
Surge on-state current
(non-repetitive)
80
i
T
– v
T
100
(A)
I
TSM
i
T
(A)
Rated load
Instantaneous on-state current
60
60 Hz
40
Peak surge on-state current
10
50
1
Tj
=
125°C
25°C
20
0.1
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
0
1
10
100
Instantaneous on-state voltage
v
T
(V)
Number of cycles at 50 Hz and 60 Hz
I
GT
(Tc)/I
GT
(Tc
=
25°C) – Tc
10
VD
=
6 V
(typ.)
2.0
V
GT
(Tc)/V
GT
(Tc
=
25°C) – Tc
VD
=
6 V
(typ.)
RL
=
100
Ω
RL
=
100
Ω
V
GT
(Tc)/V
GT
(Tc
=
25°C)
RGK
=
330
Ω
I
GT
(Tc)/I
GT
(Tc
=
25°C)
1.5
RGK
=
330
Ω
1
1.0
0.5
0.1
−50
0
50
100
150
0
−50
0
50
100
150
Case temperature
Tc
(°C)
Case temperature
Tc
(°C)
I
H
(Tc)/I
H
(Tc
=
25°C) – Tc
2.0
(typ.)
VD
=
6 V
ITM
=
1 A
RGK
=
330
Ω
I
H
(Tc)/I
H
(Tc
=
25°C)
1.5
I
H
– R
GK
10
1.0
(typ.)
ITM
=
1 A
Holding current
I
H
(mA)
Ta
=
25°C
1
0.5
0
−60
−20
20
60
100
140
0.1
0.01
0.1
1
10
100
Case temperature
Tc
(°C)
Gate to cathode resistance
R
GK
(kΩ)
3
2005-09-05
SF5G49, SF5J49, USF5G49, USF5J49
P
T (AV)
– I
T (AV)
10
Half sine waveform
140
Tc Max – I
T (AV)
Half sine waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
8
0°
6
α =
30°
4
α
180°
90°
60°
120°
Conduction angle
180°
120
100
80
60
40
20
0
0
0°
α
180°
Conduction angle
2
α =
30°
60°
90°
120°
180°
0
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
Average on-state current I
T (AV)
(A)
Average on-state current I
T (AV)
(A)
P
T (AV)
– I
T (AV)
16
140
14
12
360°
10
8
6
4
2
0
0
α =
60°
0° 180°
α1
α2
360°
180°
120°
Full sine waveform
240°
Tc Max – I
T (AV)
Full sine waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
120
0° 180°
100
80
60
40
20
0
0
360°
α1
α2
Conduction angle
α = α1 + α2
Conduction angle
α = α1 + α2
2
4
6
8
10
α =
60°
2
120° 180°
240°
360°
4
6
8
10
Average on-state current I
T (AV)
(A)
Average on-state current I
T (AV)
(A)
P
T (AV)
– I
T (AV)
16
Rectangular waveform
140
14
12
10
8
90°
6
α =
30°
4
2
0
0
60°
0°
α
360°
DC
Tc Max – I
T (AV)
Rectangular waveform
Maximum allowable case temperature
Tc Max (°C)
Average on-state power dissipation
P
T (AV)
(W)
120
100
80
60
40
20
0
0
60°
α =
30°
2
90°
120°
180°
DC
0°
α
360°
Conduction angle
180°
120°
Conduction angle
2
4
6
8
10
4
6
8
10
Average on-state current I
T (AV)
(A)
Average on-state current I
T (AV)
(A)
4
2005-09-05
SF5G49, SF5J49, USF5G49, USF5J49
4
10
dv/dt – C
GK
(typ.)
4
10
dv/dt – C
GK
(typ.)
3
10
RGK
=
100
Ω
3
10
RGK
=
100
Ω
Critical rate of rise of off-state voltage
dv/dt (V/µs)
Critical rate of rise of off-state voltage
dv/dt (V/µs)
2
10
330
Ω
2
10
330
Ω
1
10
1 kΩ
1
10
1 kΩ
0
10
0
10
3.3 kΩ
VD
=
400 V
Ta
=
75°C
CGK
3.3 kΩ
VD
=
400 V
Ta
=
100°C
CGK
−
1
10
−
3
10
RGK
10
−
2
−
1
10
0
10
−
1
10
−
3
10
RGK
10
−
2
−
1
10
0
10
Gate to cathode capacitance
C
GK
(µF)
Gate to cathode capacitance
C
GK
(µF)
V
BO
(Tc)/V
BO
(Tc
=
25°C) – Tc
120
(typ.)
(%)
100
RGK
=
100
Ω
V
BO
(Tc)/V
BO
(Tc
=
25°C)
80
330
Ω
1 kΩ
60
3.3 kΩ
40
10 kΩ
20
0
−80
−40
0
40
80
120
160
200
Case temperature
Tc
(°C)
5
2005-09-05
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