d. Maximum under Steady State conditions is 120 °C/W (N-Channel) and 110 °C/W (P-Channel).
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
www.vishay.com
1
Si4564DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 40 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= 10 V, I
D
= 8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 10 V, I
D
= - 8 A
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= - 4.5 V, I
D
= - 5 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
Total Gate Charge
Q
g
V
DS
= - 20 V, V
GS
= - 10 V, I
D
= - 10 A
N-Channel
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 20 V, V
GS
= - 4.5 V, I
D
= - 10 A
f = 1 MHz
N-Ch
N-Channel
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.3
1.3
855
2000
120
240
48
202
20.5
41.5
9.8
21.7
2.6
5.6
2.6
9.8
1.5
6.4
3.0
12.8
Ω
31
63
15
33
nC
pF
g
fs
V
DS
= 15 V, I
D
= 8 A
V
DS
= - 15 V, I
D
= - 8 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
0.0145 0.0175
0.0175
0.017
0.0232
27
25
0.021
0.020
0.028
S
Ω
0.8
- 1.2
40
- 40
40
- 34
- 4.1
5.0
2.0
- 2.5
± 100
± 100
1
-1
10
- 10
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
www.vishay.com
2
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
Si4564DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 2
Ω
I
D
≅
- 10 A, V
GEN
= - 10 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 20 V, R
L
= 2
Ω
I
D
≅
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
I
S
= 2 A
I
S
= - 2 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Channel
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
a
7
9
10
9
18
50
9
14
11
42
15
40
23
40
13
15
Max.
14
18
20
18
36
90
18
28
22
75
30
70
46
70
26
30
2.6
- 2.6
40
- 40
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.74
- 0.77
17
30
10
26
10
15
7
15
1.2
- 1.2
34
60
20
52
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
主题：自备终端(BYOD)发展趋势;用员工自己的移动设备来控制对工作设施及设备的使用，会对信息安全产生怎样的影响;在不使公司有安全风险或不损害员工隐私的前提下，有哪些方式能安全地实现这样的设施及设备使用。 自备终端(Bring Your Own Device，简称BYOD)，即企业允许员工离职时保留自己的手机，这种做法正日益流行。如今智能手机功能也越来越多，我们不仅能用自己的手机访问电脑、网...[详细]
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
