d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
www.vishay.com
1
t
10 s
Steady-State
Symbol
R
thJA
R
thJF
Typ.
49
30
Max.
62.5
40
Unit
°C/W
Si4288DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State Resistance
b
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 3 A
0.77
15
7.5
9
6
T
C
= 25 °C
2.6
50
1.2
30
15
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
0.6
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 0 V, I
D
= 1 MHz
580
100
42
10
4.9
1.5
1.5
2.7
7
9
16
8
12
10
13
8
5.4
14
18
32
16
24
20
26
16
ns
15
7.4
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 10 A
V
GS
= 4.5 V, I
D
= 7 A
V
DS
= 15 V, I
D
= 10 A
20
0.0165
0.019
35
0.0200
0.023
1.2
40
49
- 5.2
2.5
100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
a
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 4 V
I
D
- Drain Current (A)
10
40
I
D
- Drain Current (A)
8
30
6
20
V
GS
= 3 V
4
T
C
= 25 °C
2
T
C
= 125 °C
10
V
GS
= 2 V
0.5
1.0
1.5
2.0
2.5
0
0.0
0
0
1
2
T
C
= - 55 °C
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.025
750
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.022
V
GS
= 4.5 V
0.019
V
GS
= 10 V
0.016
C - Capacitance (pF)
C
iss
600
450
300
0.013
150
C
rss
C
oss
0.010
0
10
20
30
40
50
0
0
8
16
24
32
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
Capacitance
2.0
I
D
= 8 A
1.7
R
DS(on)
- On-Resistance
V
GS
= 10 V
8
V
DS
= 20 V
6
V
DS
= 10 V
V
DS
= 30 V
4
(Normalized)
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0.0
2.1
4.2
6.3
8.4
10.5
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
www.vishay.com
3
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.080
I
D
= 10 A
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source Current (A)
0.064
T
J
= 150 °C
1
0.048
0.1
T
J
= 25 °C
0.01
0.032
T
J
= 125 °C
T
J
= 25 °C
0.016
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
50
On-Resistance vs. Gate-to-Source Voltage
0.2
40
V
GS(th)
Variance (V)
0.0
Power (W)
30
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 μA
- 0.6
20
10
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
1s
10 s
DC
BVDSS Limited
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
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4
Document Number: 67078
S10-2768-Rev. A, 29-Nov-10
Si4288DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
I
D
- Drain Current (A)
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
4.0
1.5
3.2
1.2
Power (W)
Power (W)
2.4
0.9
1.6
0.6
0.8
0.3
0.0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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