TH7813A/14A
50 MHz 1024/2048 linear CCDs
n
n
n
n
n
n
n
n
n
Data rate up to 50 MHz (2 outputs at 25 MHz each)
Pixel size : 10 µm x 10 µm (10 µm pitch)
300 to 1100 nm spectral range
High sensitivity and lag free photodiodes
Very low noise (30 pJ/cm2 noise equivalent illumination)
Antiblooming
Exposure control
20 pin 0.4" DIL package
Electrical, mechanical and
between the two products
optical
compatibility
PIN IDENTIFICATION
all pins must be connected
Symbol
VDD1,2
VOS1,2
VS
VDR
VGS
ΦL1
ΦL2
ΦR
ΦA
VA
VST
ΦP
VSS
Pin nr
4, 17
3, 18
5
20
2
14
13
15
10
7
8
11
1, 6, 9,
12, 16,
19
Reset clock
AntiBlooming gate bias/clock
AntiBlooming drain bias
Storage gate bias
Transfer gate clock
Ground, Optical shield grounding
(internally connected)
Function
Output amplifiers drain supply
Video outputs
Output amplifiers substrate bias
Reset drain supply
Output gate bias
Readout register clocks
TH7813 and TH7814 linear arrays are based on THOM-
SON TCS most recent know-how in terms of design and
technology. Flexibility and performance of these devices
give the opportunity to use them in most vision systems for
industrial applications (web inspection, process control,
sorting and inspection of various parts), document scan-
ning up to 200 dpi, metrology,...
October 1998
1/8
TH7813A/14A
ABSOLUTE MAXIMUM RATINGS
Storage temperature range
Operating temperature range
Thermal cycling
Maximum applied voltages :
– Pin : 2, 8, 10, 11, 13, 14, 15
– Pin : 4, 5, 7, 17,20
– Pin : 1, 6, 9, 12, 16, 19
-55°C to +150°C
-40°C to +85°C
15°C / mn
-0.3 to 15 V
-0.3 to 16 V
0V (ground)
Stresses above those listed under absolute maximum ratings may cause permanent device failure. Functionality at or above
these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability.
Operating range defines the limits whithin which the functionality is guaranteed.
Electrical limits of applied signals are given in operating conditions section
OPERATING PRECAUTIONS
Shorting the video outputs to any other pin, even temporarily, can permanently damage the on-chip output amplifier.
OPERATING CONDITIONS
TABLE 1 - DC CHARACTERISTICS
PARAMETER
Output amplifier drain supply
Storage gate bias
Antiblooming gate (see pixel saturation
adjustment)
Reset bias
Antiblooming diode bias
Register output gate bias
Output amplifier source supply
Ground
SYMBOL
Min.
VDD1, VDD2
VST
ΦA
VDR
VA
VGS
VS
VSS
14.5
2.2
2
13.5
14.5
2.2
VALUE
Typ.
15
2.4
4
14
15
2.4
0
0
Max.
15.5
2.6
7
14.5
15.5
2.6
V
V
V
V
V
V
V
V
UNIT
TABLE 2 - DRIVE CLOCKS CHARACTERISTICS
Parameter
Reset gate
High level
Low level
Transfer gate
High level
Low level
Readout register clocks
High level
Low level
Maximum readout register frequency
F
H
ΦL1,2
8.5
-0.1
9
0
25
9.5
0.4
30
V
V
MHz
ΦP
8.5
-0.1
9
0
9.5
0.4
V
V
Symbol
Min
ΦR
8.5
-0.1
9
0
9.5
0.4
V
V
Value
Typ
Max
Clock Capacitance < 25pF
Unit
Remarks
2/8
TH7813A/14A
TIMING DIAGRAMS
The following diagram shows the general clocking scheme for TH7813A and TH7814A.
The line is composed as follow :
Number of prescan
pixels per output
TH7813A
TH7814A
4
4
number of useful
pixels per output
512
1024
Total Number of
pixels per output
516
1028
Postscan elements may be added in order to either increase the exposure time, or to provide a voltage reference level.
Figure 1 :
Line timing diagram
The following diagram shows the timing for the transfer period :
Figure 2 :
Line tranfert Period
ΦR
clock may also be held in high state during line transfer period.
3/8
TH7813A/14A
The following diagram shows the detailed timing for the pixel readout :
Duty cycle : 50% ± 10%
Crossover at 50% ± 10%
Rise and fall time 10ns
Rise and fall time
8ns
Video outputs are synchronous
Video signal occurs on
ΦL2
falling edge
First useful pixel occurs on 5th
falling edge of
ΦL2
after
ΦP
Figure 3 :
Pixel readout timing diagram
EXPOSURE TIME REDUCTION
TH7813A and TH7814A antiblooming structure provide an electronic shutter capability by clocking phase
ΦA
during the line
period. The timing diagram is describeb below :
Antiblooming gate
High level
Low level
Pulse min.
ΦA
Min
8.5
2
200
Typ
9
4
Max
9.5
7
V
V
ns
Clock Capacitance 50 pF
Low level sets saturation level
See Pixel Saturation Adjustment
Figure 4 :
Exposure time reduction
4/8
TH7813A/14A
ELECTROOPTICAL PERFORMANCE
n
General test conditions :
TCASE = 25°C
Light source : 2854K with 2 mm BG38 filter (unless specified) + F/11 optical aperture .
Typical operating conditions (2 x 25 MHz).
All values are referred to prescan pixels level
PARAMETER
Saturation output voltage
Responsivity
Responsivity unbalance
Photo response non uniformity peak-to-peak
Dark signal
Dark signal non uniformity (1σ)
Temporal RMS noise in darkness
Dynamic range
CTF
LAG
Charge transfer inefficiency (per stage)
SYMBOL
Min.
V
SAT
R
PRNU
DS
DSNU
V
N
DR
CTF
LAG
HCTI
5 500
1.65
7.5
VALUE
TYP.
2
10
2
±5
0.1
300
6 600
65
1
8.10
-5
UNIT
Max.
3
5
±10
0.4
0.1
V
V/µJ/cm²
%
% VOS
mV/ms
mV/ms
µV
%
%
REMARKS
STATIC AND DYNAMIC ELECTRICAL CHARACTERISTICS
PARAMETER
Output amplifier supply current
Output impedance
DC output level
Output conversion factor
Offset in darkness
Reset Feedthrough
SYMBOL
Min.
I
DD
Z
s
V
REF
CVF
DC off
Vft
200
VALUE
TYP.
9
225
10
5
30
400
250
Max.
mA
Ω
V
µV/e-
mV
mV
per amplifier
UNIT
REMARKS
ELECTROOPTICAL PERFORMANCES WITHOUT INFRARED CUT-OFF FILTER
TH7813A and TH7814A special semiconductor process enables to exploit the silicon’s high near infrared sensitivity while
maintaining good imaging performances in terms of response uniformity and resolution. Typical changes in performance
with and without IR filtering are summarized below :
With IR cut-off filter
Average video signal due to a given scene illumination
PRNU (single defects excluded)
CTF at Nyquist frequency
V
OS
±5 %
65 %
Without IR cut-off filter
6 x V
OS
±5 %
40 %
5/8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
