TA6009FN/FNG
TOSHIBA Bipolar Linear Integrated Circuit
Silicon Monolithic
TA6009FN,TA6009FNG
Shock Sensor IC (1 ch version)
TA6009FN/FNG detects an existence of external shock through
the shock sensor and output.
Features
•
•
TA6009FN/FNG operates from 2.7 to 5.5 V DC single power
supply voltage.
Signal from the shock sensor is amplified according to setting
gain, and is detected through the internal window
comparator.
TA6009FN/FNG incorporates 1-ch shock detecting circuitry.
Input terminal of sensor signal is designed high impedance.
Differential input impedance = 100 MΩ (typ.)
•
•
•
LPF (low pass filter) circuitry is incorporated.
Cut-off frequency of LPF = 7 kHz
Sensitivity of shock detection can be adjusted by external devices.
Small package
SSOP10-P-0.65A (0.65 mm pitch)
Weight: 0.04 g (typ.)
•
•
Block Diagram
Pin Connection
(top view)
SIA
10
A
1
B
2
9
8
7
SIB
GUARD
6
V
CC
OUT
GND
5
GND
1
2
3
4
5
10 W-CONT
9
8
7
6
DO
AI
AO
V
CC
BUFFER
50 MΩ
DIFF&LPF
×10
7 kHz
R 1.7 V (1.7 V)
E 1.4 V (1.2 V)
F 1.1 V (0.7 V)
)
=
10 pin
→
GND
−
+
OP-AMP
BUFFER
50 MΩ
(
GUARD
0.57 V
+
Comparator
−
+
−
Comparator
3
GUARD
4
Company Headquarters
3 Northway Lane North
Latham,
New York
12110
Toll Free: 800.984.5337
Fax:
518.785.4725
Web: www.marktechopto.com | Email: info@marktechopto.com
California Sales Office:
950 South Coast Drive, Suite 265
Costa Mesa, California 92626
Toll Free: 800.984.5337
Fax: 714.850.9314
TA6009FN/FNG
Pin Function
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
SIA
SIB
GUARD
OUT
GND
V
CC
AO
AI
DO
W-CONT
Function
Connection terminal of shock sensor
Connection terminal of shock sensor
Input (1, 2 pin) GUARD terminal
Output terminal (output
=
“L” when shock is detected.)
Ground terminal
Power supply voltage
Op-Amp output terminal
Op-Amp input terminal
Differential-Amp output terminal
WindComp. trip voltage selection terminal
Maximum Ratings
(Ta
=
25°C)
Characteristics
Power supply voltage
Power dissipation
Storage temperature
Symbol
V
CC
P
D
T
stg
Rating
7
300
−55
to 150
Unit
V
mW
°C
Recommend Operating Condition
Characteristics
Power supply voltage
Operating temperature
Symbol
V
CC
T
opr
Rating
2.7 to 5.5
−25
to 85
Unit
V
°C
2
2003-12-03
TA6009FN/FNG
Electrical Characteristics
(unless otherwise specified, V
CC
=
3.3 V, Ta
=
25°C)
Characteristics
Supply voltage
Supply current
Symbol
V
CC
I
CC
Test
Circuit
(1)
V
CC
=
3.3 V
V
CC
=
5.0 V
Test Condition
Min
2.7
Typ.
3.3
1.8
1.8
Max
5.5
2.4
2.4
Unit
V
mA
(GUARD)
Characteristics
Output voltage
Symbol
VoGur
Test
Circuit
(2)
Test Condition
Min
0.52
Typ.
0.57
Max
0.62
Unit
V
(DIFF-AMP)
Characteristics
Input impedance
Gain
Output DC voltage
Low pass filter cut-off freq.
Output source current
Output sink current
(Note 1)
Symbol
Zin
GvBuf
VoBuf
fc
IBso
IBsi
Test
Circuit
(3)
(4)
(5)
(6)
(7)
Test Condition
Connect C
=
100 pF between
1 pin and 2 pin
Frequency at
−3dB
point
Voh
=
V
CC
−
1 V
Vol
=
0.3 V
Min
50
19.6
0.7
5
400
75
Typ.
100
20
1
7
800
130
20.4
1.3
10
Max
Unit
MΩ
dB
V
kHz
µA
µA
Note 1: Marked parameters are reference data.
(OP-AMP)
Characteristics
Cut-off frequency
Openloop gain
Input voltage 1
Input voltage 2
Input current
Offset voltage
Output source current
Output sink current
(Note 1)
(Note 1)
(Note 1)
Symbol
fT
Gvo
Vin1
Vin2
I
in
Voff
IAso
IAsi
Test
Circuit
(8)
(9)
(10)
(11)
(12)
Test Condition
10 pin
→
OPEN
10 pin
→
GND
Voh
=
V
CC
−
1 V
Vol
=
0.3 V
−5
300
130
(Note 2)
(Note 2)
Min
1.5
80
1.33
1.14
Typ.
2
90
1.4
1.2
25
0
800
200
1.47
1.26
50
5
Max
Unit
MHz
dB
V
V
nA
mV
µA
µA
Note 1: Marked parameters are reference data.
Note 2: 10 pin must be non-connected otherwise connected to GND.
(window-comparator)
Characteristics
Trip voltage 1
Trip voltage 2
Output source current
Output sink current
(Note 1)
(Note 1)
Symbol
Vtrp1
Vtrp2
IWso
IWsi
Test
Circuit
(13)
(14)
Test Condition
10 pin
→
OPEN
10 pin
→
GND
Voh
=
V
CC
−
0.5 V
Vol
=
0.3 V
(Note 2)
(Note 2)
Min
Vin1
±0.285
Vin2
±0.475
30
300
Typ.
Vin1
±0.3
Vin2
±0.5
50
800
Max
Vin1
±0.315
Vin2
±0.525
Unit
V
V
µA
µA
Note 1: Marked parameters are reference data.
Note 2: 10 pin must be non-connected otherwise connected to GND.
3
2003-12-03
TA6009FN/FNG
Application Note
1.7 V (1.7 V)
Buffer
×1
1
Shock
sensor
2
Buffer
×1
1.4 V (1.2 V) REF
1.1 V (0.7 V)
LPF
AMP
×10
9
C
1
R
1
C
2
R
2
8
7
Window
Comparator
4 OUT
Figure 1
The Composition of G-Force Sense Amplifier
Figure 1 is the composition of G-Force sense amplifier.
The shock sensor is connected between 1 and 2 terminal.
When G-force Sensor (sensor sensibility
=
s (mV/G)) is used to detect external shock of g (G), the external
parts are determined as following.
(gain setting)
*
10 PIN
→
GND
500/(s
×
g)
=
G1
G1/10
=
G (OP-AMP)
(HPF setting)
fc
=
1/(2
π ×
R
1
×
C
1
)
(LPF setting)
fc
=
1/(2
π ×
R
2
×
C
2
)
4
2003-12-03
TA6009FN/FNG
Reference Data
(1)
9 pin (DIFF-AMP output) CMRR, PSRR
CMRR, PSRR (9 pin)
−30
−40
−50
CMRR
(dB)
−60
PSRR
−70
−80
100
1000
10000
100000
(Hz)
(2)
7 pin (OP-AMP output) source current
Source Current (7 pin)
1800
1500
85°C
(µA)
Source current
1200
900
25°C
600
−25°C
300
0
1.8
2.0
2.2
2.4
2.6
Voh
(V)
(3)
7 pin (OP-AMP output) sink current
Sink Current (7 pin)
300
85°C
250
Sink current
(µA)
200
25°C
150
−25°C
100
50
0
0
0.1
0.2
0.3
0.4
0.5
Vol
(V)
5
2003-12-03
Microchip MCU
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