HBL21000RP
Product Preview
1-Channel ESD Protector
Product Description
The HBL21000RP provides robust ESD protection for sensitive
parts that may be subjected to electrostatic discharge (ESD). The tiny
form factor and single wirebond requirement enables it to be used in
very confined spaces. The electrical ‘back−to−back zener’
configuration also provides ESD protection in cases where nodes with
AC signals are present. This device is designed and characterized to
safely dissipate ESD strikes of at least
±8
kV, according to the
MIL−STD−883 (Method 3015) specification for Human Body Model
(HBM) ESD.
Features
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•
Compact Die Protects from ESD Discharges
•
Almost No Conduction at Signal Amplitudes Less Than
±4
V
•
ESD Protection Over
±8
kV Contact Discharge per MIL_STD_883
International ESD Standard
Applications
•
LED Lighting
•
Modules
•
Interface Circuits
Aluminum (Al) Pad on the Topside
Gold−Tin (AuSn) on the Backside
Figure 1. Electrical Schematic
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 4
Publication Order Number:
HBL21000/D
HBL21000RP
CURRENT/VOLTAGE GRAPH
Symbol
I
CL+
V
CL+
I
L2+
V
L2+
I
L1+
V
L1+
I
CL−
V
CL−
I
L1−
V
L1−
NOTE:
Description
Positive Clamping Current
Positive Clamping Voltage
Leakage Current at V
L2+
Voltage Condition: +14V
Leakage Current at V
L1+
Voltage Condition: +4V
Negative Clamping Current
Negative Clamping Voltage
Leakage Current at V
L1−
Voltage Condition: −4V
The polarity in the above graph corresponds to the
polarity convention shown in the application diagram.
Figure 2.
ORDERING INFORMATION
Ordering Part Number
HBL21000RP
Topside Metal
Al
Backside Metal
AuSn
Thickness
4 mils
Shipping Method
Ring Pack
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature Range
Storage Temperature Range
Rating
−40 to +150
−65 to +150
Unit
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
STANDARD OPERATING CONDITIONS
Parameter
Rating
−40 to +150
Unit
°C
Operating Temperature Range
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2
HBL21000RP
ELECTRICAL OPERATING CHARACTERISTICS
(See Note 1)
Symbol
I
LEAK
Leakage Current
Parameter
Test Conditions
V =
±4
V, 150°C (Note 2)
V =
±4
V, 25°C (V
L1±
)
V = +14 V, 25°C (V
L2+
)
T
A
= 25°C;
at 10 mA (I
CL+
)
at −10 mA (I
CL−
)
T
A
= 25°C
(Note 2)
+16
−9.0
±8
+19
−7.0
Min
Typ
Max
4.0
0.3 (I
L1±
)
0.5 (I
L2+
)
+22
−5.0
Unit
mA
mA
mA
V
V
CL
Signal Clamp Voltage
Positive polarity on signal node (V
CL+
)
Negative polarity on signal node (V
CL−
)
ESD Protection − withstand voltage:
Human Body Model (MIL−STD−883, Method
3015)
V
ESD
kV
1. Operating characteristics are over standard operating conditions unless otherwise specified.
2. This parameter is guaranteed by design and/or characterization.
MECHANICAL DETAILS
MECHANICAL SPECIFICATIONS
Parameter
Composition
Die shape
Length (sawn)
Width (sawn)
Thickness
Top pad length
Top pad width
Top pad composition
Back metal (underside)
Condition
Silicon wafer,
p+ doped
Square
200
200
4
125
125
Al (Aluminum)
AuSn (Gold−Tin)
mm
mm
mils
mm
mm
Top Pad Opening:
125
mm
x 125
mm
Unit
Dimensions Diagram
Sawn Die Size:
200
mm
x 200
mm
Figure 3. Die Dimensions
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HBL21000/D