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MX29LV033ATI-90: 产品描述Flash, 4MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40; 产品类别存储存储; 文件大小333KB，共55页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx

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MX29LV033ATI-90概述

Flash, 4MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40

MX29LV033ATI-90规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Macronix
零件包装代码	TSOP1
包装说明	TSOP1, TSSOP40,.8,20
针数	40
Reach Compliance Code	unknown
ECCN代码	3A991.B.1.A
最长访问时间	90 ns
命令用户界面	YES
数据轮询	YES
JESD-30 代码	R-PDSO-G40
JESD-609代码	e0
长度	18.4 mm
内存密度	33554432 bit
内存集成电路类型	FLASH
内存宽度	8
功能数量	1
部门数/规模	64
端子数量	40
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	4MX8
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP1
封装等效代码	TSSOP40,.8,20
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
编程电压	3 V
认证状态	Not Qualified
就绪/忙碌	YES
座面最大高度	1.2 mm
部门规模	64K
最大待机电流	0.000015 A
最大压摆率	0.03 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.5 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
切换位	YES
类型	NOR TYPE
宽度	10 mm

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MX29LV033A

32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY

FEATURES

GENERAL FEATURES

• 4,194,304 x 8 byte structure

• Sixty-four Equal Sectors with 64KB each

- Any combination of sectors can be erased with erase

suspend/resume function

• Eighteen Sector Groups

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotected function to allow code

changing

- Provides temporary sector group unprotected func-

tion for code changing in previously protected sector

groups

• Single Power Supply Operation

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

- Pinout and software compatible to single power sup-

ply Flash

• 2nd generation of 3V/32M Flash product

- Fully compatible with MX29LV033 device

PERFORMANCE

• High Performance

- Fast access time: 70/90ns

- Fast program time: 7us/byte, 36s/chip (typical)

- Fast erase time: 0.7s/sector, 35s/chip (typical)

• Low Power Consumption

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 200nA (typical)

• Minimum 100,000 erase/program cycle

• 10-year data retention

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

• Status Reply

- Data# polling & Toggle bits provide detection of pro-

gram and erase operation completion

• Support Command Flash Interface (CFI)

HARDWARE FEATURES

• Ready/Busy# (RY/BY#) Output

- Provides a hardware method of detecting program

and erase operation completion

• Hardware Reset (RESET#) Input

- Provides a hardware method to reset the internal state

machine to read mode

• ACC input pin

- Provides accelerated program capability

PACKAGE

• 40-pin TSOP

GENERAL DESCRIPTION

The MX29LV033A is a 32-mega bit Flash memory orga-

nized as 4M bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29LV033A is

packaged in 40-pin TSOP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

The standard MX29LV033A offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention, the

MX29LV033A has separate chip enable (CE#) and out-

put enable (OE#) controls.

P/N:PM1017

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV033A uses a command register to manage this

functionality.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and program

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and programming operations produces reliable

cycling. The MX29LV033A uses a 2.7V to 3.6V VCC

REV. 1.0, SEP. 20, 2004

MX29LV033ATI-90相似产品对比

	MX29LV033ATI-90	MX29LV033ATI-70G	MX29LV033ATC-90G	MX29LV033ATC-70G	MX29LV033ATI-90G
描述	Flash, 4MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40	Flash, 4MX8, 70ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40	Flash, 4MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40	Flash, 4MX8, 70ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40	Flash, 4MX8, 90ns, PDSO40, 10 X 20 MM, PLASTIC, MO-142, TSOP1-40
是否Rohs认证	不符合	符合	符合	符合	符合
厂商名称	Macronix	Macronix	Macronix	Macronix	Macronix
零件包装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
包装说明	TSOP1, TSSOP40,.8,20	TSOP1, TSSOP40,.8,20	TSOP1, TSSOP40,.8,20	TSOP1, TSSOP40,.8,20	TSOP1, TSSOP40,.8,20
针数	40	40	40	40	40
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
最长访问时间	90 ns	70 ns	90 ns	70 ns	90 ns
命令用户界面	YES	YES	YES	YES	YES
数据轮询	YES	YES	YES	YES	YES
JESD-30 代码	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40	R-PDSO-G40
JESD-609代码	e0	e6	e6	e6	e6
长度	18.4 mm	18.4 mm	18.4 mm	18.4 mm	18.4 mm
内存密度	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8
功能数量	1	1	1	1	1
部门数/规模	64	64	64	64	64
端子数量	40	40	40	40	40
字数	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	4000000	4000000	4000000	4000000	4000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	70 °C	70 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-	-40 °C
组织	4MX8	4MX8	4MX8	4MX8	4MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP1	TSOP1	TSOP1	TSOP1	TSOP1
封装等效代码	TSSOP40,.8,20	TSSOP40,.8,20	TSSOP40,.8,20	TSSOP40,.8,20	TSSOP40,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	260	260	260	260
电源	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
编程电压	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
就绪/忙碌	YES	YES	YES	YES	YES
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
部门规模	64K	64K	64K	64K	64K
最大待机电流	0.000015 A	0.000015 A	0.000015 A	0.000015 A	0.000015 A
最大压摆率	0.03 mA	0.03 mA	0.03 mA	0.03 mA	0.03 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH	TIN BISMUTH
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	40	40	40	40
切换位	YES	YES	YES	YES	YES
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	10 mm	10 mm	10 mm	10 mm	10 mm
湿度敏感等级	-	3	3	3	3

MX29LV033ATI-90

MX29LV033ATI-90概述

MX29LV033ATI-90规格参数

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MX29LV033ATI-90相似产品对比

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