1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
Total Capacitance
(V
R
= 1.0 V, f = 1 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
Symbol
I
R
8.0
75
V
F
255
325
410
CT
Min
Typ
Max
30
Unit
mA
mV
320
390
480
pF
ns
35
12.0
t
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
Source
+
−
0.1
mF
t
r
0V
t
p
10%
750
mH
0.1
mF
I
F
V
R
90%
50
W
Output
Pulse
Generator
Pulse Generator
Output
I
F
DUT
t
rr
Adjust for I
RM
R
L
= 50
W
Current
Transformer
50
W
Input
Oscilloscope
1.
2.
3.
4.
5.
I
RM
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
Pulse Generator transition time << t
rr
.
I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
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2
NSR0520V2, NSVR0520V2
TYPICAL CHARACTERISTICS
1000
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
100000
10000
100
1 25°C
10
85°C
1
1000
100
10
25°C
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
12
14
16
18
20
−40°C
85°C
1 25°C
25°C
−40°C
0.1
0
0.05 0.1
0.15 0.2
0.25 0.3
0.35 0.4
0.45 0.5
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 2.
60
C
t
, TOTAL CAPACITANCE (pF)
55
50
45
40
35
30
25
20
15
10
0
2
4
6
8
10
12
14
16
18
20
V
R
, REVERSE VOLTAGE (V)
Figure 3.
Figure 4.
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3
NSR0520V2, NSVR0520V2
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
−X−
D
−Y−
E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
2X
2X
RECOMMENDED
SOLDERING FOOTPRINT*
1.80
2X
L
0.48
0.40
PACKAGE
OUTLINE
2X
DIMENSION: MILLIMETERS
L2
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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