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GVT71128E36T-9: 产品描述Standard SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100; 产品类别存储存储; 文件大小510KB，共16页; 制造商Cypress(赛普拉斯)

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GVT71128E36T-9概述

Standard SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

GVT71128E36T-9规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Cypress(赛普拉斯)
零件包装代码	QFP
包装说明	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数	100
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	8.5 ns
其他特性	FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)	90 MHz
I/O 类型	COMMON
JESD-30 代码	R-PQFP-G100
长度	20 mm
内存密度	4718592 bit
内存集成电路类型	STANDARD SRAM
内存宽度	36
功能数量	1
端子数量	100
字数	131072 words
字数代码	128000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX36
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LQFP
封装等效代码	QFP100,.63X.87
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE
并行/串行	PARALLEL
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.01 A
最小待机电流	3.14 V
最大压摆率	0.29 mA
最大供电电压 (Vsup)	3.63 V
最小供电电压 (Vsup)	3.135 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子形式	GULL WING
端子节距	0.65 mm
端子位置	QUAD
宽度	14 mm

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345A

CY7C1345A/GVT71128E36

128K x 36 Synchronous Flow-Through Burst SRAM

Features

•

Fast access times: 7.5 and 8 ns

Fast clock speed: 117 and 100 MHz

Provide high-performance 2-1-1-1 access rate

Fast OE access times: 4.0 ns

3.3V –5% and +10% power supply

2.5V or 3.3V I/O supply

5V tolerant inputs except I/Os

Clamp diodes to V

SSQ

at all inputs and outputs

Common data inputs and data outputs

Byte Write Enable and Global Write control

Three chip enables for depth expansion and address

pipeline

Address, data, and control registers

Internally self-timed Write Cycle

Burst control pins (interleaved or linear burst se-

quence)

Automatic power-down for portable applications

Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid

Array) and 100-pin TQFP packages

eral circuitry and a 2-bit counter for internal burst operation. All

synchronous inputs are gated by registers controlled by a pos-

itive-edge-triggered Clock Input (CLK). The synchronous in-

puts include all addresses, all data inputs, address-pipelining

Chip Enable (CE), depth-expansion Chip Enables (CE2 and

CE2), Burst Control inputs (ADSC, ADSP, and ADV), Write

Enables (WEL, WEH, and BWE), and Global Write (GW).

Asynchronous inputs include the Output Enable (OE) and

Burst Mode Control (MODE), and Sleep Mode Control (ZZ).

The data outputs (DQ), enabled by OE, are also asynchro-

nous.

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the Burst Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed Write cycle. Write cycles can be one to

four bytes wide as controlled by the write control inputs. Indi-

vidual byte write allows individual byte to be written. BW1 con-

trols DQ1–DQ8 and DQP1. BW2 controls DQ9–DQ16 and

DQP2. BW3 controls DQ17–DQ24 and DQP3. BW4 controls

DQ25–DQ32 and DQP4. BW1, BW2, BW3, and BW4 can be

active only with BWE being LOW. GW being LOW causes all

bytes to be written.

The CY7C1345A/GVT71128E36 operates from a +3.3V pow-

er supply and all outputs operate on a +2.5V supply. All inputs

and outputs are JEDEC standard JESD8-5 compatible. The

device is ideally suited for 486, Pentium®, 680x0, and Power-

PC™ systems and for systems that benefit from a wide syn-

chronous data bus.

Functional Description

The Cypress Synchronous Burst SRAM family employs high-

speed, low-power CMOS designs using advanced triple-layer

polysilicon, double-layer metal technology. Each memory cell

consists of four transistors and two high-valued resistors.

The

CY7C1345A/GVT71128E36

SRAM

integrates

131,072x36 SRAM cells with advanced synchronous periph-

Selection Guide

7C1345A-117

71128E36-7

Maximum Access Time (ns)

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Pentium is a registered trademark of Intel Corporation.

PowerPC is a trademark of IBM Corporation.

7C1345A-100

71128E36-8

320

7C1345A-100

71128E36-9

320

7C1345A-100

71128E36-10

320

7.5

370

Cypress Semiconductor Corporation

Document #: 38-05123 Rev. **

•

3901 North First Street

•

San Jose

•

CA 95134 • 408-943-2600

Revised September 12, 2001

GVT71128E36T-9相似产品对比

	GVT71128E36T-9	GVT71128E36B-10	GVT71128E36T-8	GVT71128E36B-7	GVT71128E36T-7	GVT71128E36B-9	GVT71128E36T-10	GVT71128E36B-8
描述	Standard SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Standard SRAM, 128KX36, 10ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	Standard SRAM, 128KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	Standard SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Standard SRAM, 128KX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	Standard SRAM, 128KX36, 10ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Standard SRAM, 128KX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	QFP	BGA	QFP	BGA	QFP	BGA	QFP	BGA
包装说明	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 22 MM, 2.40 MM HEIGHT, FBGA-119	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
针数	100	119	100	119	100	119	100	119
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	8.5 ns	10 ns	8 ns	7.5 ns	7.5 ns	8.5 ns	10 ns	8 ns
其他特性	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)	90 MHz	50 MHz	100 MHz	117 MHz	117 MHz	90 MHz	50 MHz	100 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PQFP-G100	R-PBGA-B119	R-PQFP-G100	R-PBGA-B119	R-PQFP-G100	R-PBGA-B119	R-PQFP-G100	R-PBGA-B119
长度	20 mm	22 mm	20 mm	22 mm	20 mm	22 mm	20 mm	22 mm
内存密度	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit	4718592 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	36	36	36	36	36	36	36	36
功能数量	1	1	1	1	1	1	1	1
端子数量	100	119	100	119	100	119	100	119
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	128KX36	128KX36	128KX36	128KX36	128KX36	128KX36	128KX36	128KX36
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LQFP	BGA	LQFP	BGA	LQFP	BGA	LQFP	BGA
封装等效代码	QFP100,.63X.87	BGA119,7X17,50	QFP100,.63X.87	BGA119,7X17,50	QFP100,.63X.87	BGA119,7X17,50	QFP100,.63X.87	BGA119,7X17,50
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	GRID ARRAY	FLATPACK, LOW PROFILE	GRID ARRAY
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	2.4 mm	1.6 mm	2.4 mm	1.6 mm	2.4 mm	1.6 mm	2.4 mm
最大待机电流	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
最小待机电流	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
最大压摆率	0.29 mA	0.2 mA	0.32 mA	0.37 mA	0.37 mA	0.29 mA	0.2 mA	0.32 mA
最大供电电压 (Vsup)	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V	3.63 V
最小供电电压 (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	GULL WING	BALL	GULL WING	BALL	GULL WING	BALL	GULL WING	BALL
端子节距	0.65 mm	1.27 mm	0.65 mm	1.27 mm	0.65 mm	1.27 mm	0.65 mm	1.27 mm
端子位置	QUAD	BOTTOM	QUAD	BOTTOM	QUAD	BOTTOM	QUAD	BOTTOM
宽度	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm
厂商名称	Cypress(赛普拉斯)	-	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)

GVT71128E36T-9

GVT71128E36T-9概述

GVT71128E36T-9规格参数

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