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HN4C06JGR: 产品描述TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小338KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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HN4C06JGR概述

TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

HN4C06JGR规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G5
针数	5
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	LOW NOISE
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	120 V
配置	COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE)	200
JESD-30 代码	R-PDSO-G5
元件数量	2
端子数量	5
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
功耗环境最大值	0.3 W
最大功率耗散 (Abs)	0.3 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
VCEsat-Max	0.3 V

HN4C06JGR相似产品对比

	HN4C06JGR	HN4C06J-BL(TE85L,F	HN4C06J-GR	HN4C06J-GR(TE85L,F	HN4C06J-BL	HN4C06JBL
描述	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANS 2 NPN 120V 100MA SC74A	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	Small Signal Bipolar Transistor	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 120 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-G5	-	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5	SMALL OUTLINE, R-PDSO-G5
针数	5	-	5	-	5	5
Reach Compliance Code	unknown	-	unknown	unknown	unknown	unknown
其他特性	LOW NOISE	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
最大集电极电流 (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	120 V	-	120 V	120 V	120 V	120 V
配置	COMMON EMITTER, 2 ELEMENTS	-	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS	COMMON EMITTER, 2 ELEMENTS
最小直流电流增益 (hFE)	200	-	200	200	350	350
JESD-30 代码	R-PDSO-G5	-	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5	R-PDSO-G5
元件数量	2	-	2	2	2	2
端子数量	5	-	5	5	5	5
最高工作温度	150 °C	-	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	-	NPN	NPN	NPN	NPN
功耗环境最大值	0.3 W	-	0.3 W	0.3 W	0.3 W	0.3 W
最大功率耗散 (Abs)	0.3 W	-	0.3 W	0.3 W	0.3 W	0.3 W
认证状态	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	YES	-	YES	YES	YES	YES
端子形式	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	-	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	-	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	-	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.3 V	-	0.3 V	0.3 V	0.3 V	0.3 V

HN4C06JGR

HN4C06JGR概述

HN4C06JGR规格参数

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